Overview for Hall Effect Sensors

First discovered by Edwin Hall in 1879, the "Hall Effect" is used to detect the presence of a magnetic field by an induced change in the electric field. Modern day silicon-based Hall effect sensors are used for position, speed and acceleration detection, object recognition, index counting and more in a wide range of industrial and automotive applications.

Why are they used:

  • Solid-state devices include signal conditioning and protection logic
  • Magnetic sensing is a highly repeatable operation (no mechanical wear or tear)
  • Contact is not required for operation
  • Hall effect sensors are immune to dust, dirt, air, RF noise
  • Hall effect sensors are invariable over a wide temp range
  • The devices are pin-to-pin compatible and low cost (only 3 pins)

DRV5013

2.5 V to 38 V Digital Latch Hall effect sensors


DRV5023

2.5 V to 38 V Digital Switch Hall Effect Sensor


DRV5033

2.5 V to 38 V Digital Omnipolar-Switch Hall Effect Sensor


DRV5053

2.5 V to 38 V Analog Bipolar Hall Effect Sensor

TI's DRV5000 Hall effect sensors support a variety of applications.
Some examples include:

  • 3-phase BLDC motors
  • Index counting
  • Position, speed, acceleration
  • Presence detection
  • Proximity sensing
  • Open / close detection

Key benefits of a TI integrated Hall effect sensor solution

  • Large voltage operating range (2.5V-38V)
  • Supports high-voltage load dump (up to 40V)
  • Devices feature a power-on "ready" pulse at start-up
  • Fast power-on time (35 ┬Ásec)
  • Fast switching time (less than 15┬Ásec)
  • Reverse supply protection (up to -22V)
  • Overcurrent protection