SLVSHO1A March 2025 – December 2025 TPS1689
PRODUCTION DATA
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| INPUT SUPPLY (VDD) | ||||||
| VIN | Input voltage range | 9 | 80 | V | ||
| VDD | Input voltage range | VIN | 80 | V | ||
| IQON(VDD) | VDD ON state quiescent current | VDD > VUVPR, VEN ≥ VUVLOR, VOVP < VOVPF | 4 | 6 | mA | |
| VUVPR | VDD Undervoltage Protection Threshold Rising | VDD Rising | 8.5 | 8.9 | V | |
| VUVPF | VDD Undervoltage Protection Threshold falling | VDD Falling | 6.7 | 7.05 | V | |
| VUVPHYS | UVP Hysteresis VDD | 1.5 | V | |||
| INPUT SUPPLY (IN) | ||||||
| VUVLOR(VIN) | VIN undervoltage threshold rising | VIN Rising, VIN_UV_FLT = 0x7F | 40.5 | 41.2 | V | |
| VUVLOF(VIN) | VIN undervoltage threshold falling | VIN Falling, VIN_UV_FLT = 0x7F | 37 | 38.5 | V | |
| IQON(VIN) | VIN ON state quiescent current | VEN ≥ VUVLOR | 1.69 | mA | ||
| IQOFF(VIN) | VIN OFF state current | VSDR < VEN < VUVLO | 1.69 | mA | ||
| ISD(VIN) | VIN shutdown current | VEN < VSDF | 1.69 | mA | ||
| ILKG(VOUT) | VOUT leakage current | VEN < VUVLO, SWEN=L, VOUT = 0V | 20 | µA | ||
| ILKG(VOUT) | VOUT leakage current | VEN > VUVLO, SWEN=L, VOUT = 0V | 220 | µA | ||
| ENABLE / UNDERVOLTAGE LOCKOUT (EN/UVLO) | ||||||
| VUVLOR | EN/UVLO pin voltage threshold for turning on, rising | EN/UVLO Rising | 1.18 | 1.21 | 1.24 | V |
| VUVLOF | EN/UVLO pin voltage threshold for turning off and engaging QOD, falling (primary device) | EN/UVLO Falling | 1 | 1.12 | 1.14 | V |
| VUVLOHYS | UVLO Hysteresis | 89 | mV | |||
| VSDF | Shutdown threshold | EN/UVLO Falling | 0.4 | 0.42 | V | |
| VSDR | Shutdown threshold | EN/UVLO Rising | 0.5 | 0.55 | V | |
| IENLKG | EN/UVLO pin leakage current | -100 | 100 | nA | ||
| OVERVOLTAGE PROTECTION (IN) | ||||||
| VIN-OVPR | IN overvoltage protection threshold (rising) | VIN_OV_FLT = 0xB1 |
58.5 | 60 | 61.5 | V |
| VIN-OVPF | IN overvoltage protection threshold (falling) | VIN_OV_FLT = 0xB1 |
55.57 | 57 | 58.43 | V |
| VIN-OVPHYS | IN overvoltage protection threshold (Hysterisis) | VIN_OV_FLT = 0xB1 |
3 | V | ||
| ON-RESISTANCE (IN - OUT) | ||||||
| RON | ON state resistance | IOUT = 12A; TJ = 25°C | 3.5 | 5.55 | mΩ | |
| RON | ON state resistance | IOUT = 12A; TJ = -40°C to 125°C | 6.1 | mΩ | ||
| CURRENT LIMIT REFERENCE (IREF) | ||||||
| VIREF | Current Limit Reference DAC output voltage |
VIREF = 0x32 (Default) | 0.99 | 1 | 1.01 | V |
| VIREF | Current Limit Reference DAC output voltage |
VIREF = 0x00 | 0.29 | 0.3 | 0.31 | V |
| VIREF | Current Limit Reference DAC output voltage |
VIREF = 0x3F | 1.16 | 1.182 | 1.2 | V |
| CURRENT LIMIT (ILIM) | ||||||
| GILIM(LIN) | Current Monitor Gain (ILIM:IOUT) vs. IOUT. | Device in steady state (PG asserted), IOUT = 12 A | 17 | 18 | 20.6 | µA/A |
| Istart-up peak | Peak Current at Startup | VOUT > VFB, GHI deasserted; VIN ≤ 60V | 0.5 | A | ||
| VFB | Foldback voltage | 2 | V | |||
| OUTPUT CURRENT MONITOR AND OVERCURRENT PROTECTION (IMON) | ||||||
| GIMON | Current Monitor Gain (IMON:IOUT) | Device in steady state (PG asserted), IOUT = 12A | 17.7 | 18.18 | 18.49 | µA/A |
| GIMON | Current Monitor Gain (IMON:IOUT) | Device in steady state (PG asserted), IOUT = 4A | 17.4 | 18.31 | 19.1 | µA/A |
| IOCP | IOUT Current limit trip (Circuit-Breaker) threshold | RIMON = 2.55kΩ, VIREF = 1V | 21.0 | 21.7 | 22.3 | A |
| SHORT-CIRCUIT PROTECTION | ||||||
| IFFT | Fixed fast trip threshold in steady state (TPS16890) | PG asserted High | 73 | A | ||
| IFFT | Fixed fast trip threshold in steady state (TPS1689A) | PG asserted High | 83 | A | ||
| IFFT | Fixed fast trip threshold in steady state (TPS16890) | PG asserted High; TJ = 25°C to 125°C | 55 | A | ||
| IFFT | Fixed fast trip threshold in steady state (TPS1689A) | PG asserted High; TJ = 25°C to 125°C | 65 | A | ||
| ISFT | Scalable fast trip current:IOCP ratio | DEVICE_CONFIG [12:11] = 11 | 1.5 | A/A | ||
| ISFT | Scalable fast trip current:IOCP ratio | DEVICE_CONFIG [12:11] = 10 | 2 | A/A | ||
| ISFT | Scalable fast trip current:IOCP ratio | DEVICE_CONFIG [12:11] = 01 | 2.5 | A/A | ||
| SFT(SAT) | Scalable fast trip current:Istart-up peak ratio | During Powerup, PGOOD Low | 2 | A/A | ||
| ACTIVE CURRENT SHARING | ||||||
| RON(ACS) | RON during Active current sharing | VILIM > 1.1 × (1/3) × VIREF | 4.38 | 7 | mΩ | |
| GIMON(ACS) | IMON:IOUT ratio during active current limiting | PG asserted High, VILIM > 1.1 × VIREF | 17.24 | 18.49 | 19.84 | µA/A |
| CLREF(ACS) | Ratio of Active current sharing trigger threshold to steady state circuit-breaker threshold | PG asserted High | 36.67 | % | ||
| INRUSH CURRENT PROTECTION (DVDT) | ||||||
| IDVDT | dVdt Pin Charging Current | DEVICE_CONFIG[10:9] = 11 | 2.4 | 3 | 3.6 | µA |
| IDVDT | dVdt Pin Charging Current | DEVICE_CONFIG[10:9] = 10 | 1.5 | 2 | 2.5 | µA |
| IDVDT | dVdt Pin Charging Current | DEVICE_CONFIG[10:9] = 01 | 0.75 | 1 | 1.25 | µA |
| IDVDT | dVdt Pin Charging Current | DEVICE_CONFIG[10:9] = 00 | 0.35 | 0.5 | 0.65 | µA |
| GDVDT | dVdt Gain | 0.4V < VdVdt < 2.4V | 22 | 25 | 28 | V/V |
| RDVDT | dVdt Pin to GND Discharge Resistance | 500 | Ω | |||
| GHI | ||||||
| VGS(GHI) Rising | G-S Threshold when GHI/PG is asserted | 7 | V | |||
| RON(GHI) | Ron When GHI/PG is asserted | 3.8 | mΩ | |||
| QUICK OUTPUT DISCHARGE (QOD) | ||||||
| IQOD | Quick Output Discharge pull-down current | VSD(R) < VEN < VUVLO, VIN = 50V | 22 | mA | ||
| TEMPERATURE SENSOR OUTPUT (TEMP) | ||||||
| GTMP | TEMP sensor gain | VIN = 50V | 2.73 | mV/℃ | ||
| VTMP | TEMP pin output voltage | TJ = 25 ℃, VIN = 50V | 670 | 678 | 690 | mV |
| ITMPSRC | TEMP pin sourcing current | VIN = 50V | 119 | µA | ||
| ITMPSNK | TEMP pin sinking current | VIN = 50V | 10 | µA | ||
| OVERTEMPERATURE PROTECTION (OTP) | ||||||
| TSD | Absolute Thermal Shutdown Rising Threshold | TJ Rising, , VIN = 50V | 150 | °C | ||
| TSDHYS | Absolute Thermal shutdown hysteresis | TJ Falling, VIN = 50V | 13 | °C | ||
| FET HEALTH MONITOR | ||||||
| VDSFLT | FET D-S Fault Threshold | SWEN = L, VIN = 50V | 0.5 | V | ||
| VDSOK | FET D-S Fault Recovery Threshold | SWEN = L, VIN = 50V | 0.64 | V | ||
| ADDRESS SELECT (ADDR0/ADDR1) | ||||||
| IADDRx | ADDR0 pin pull-up current | 3.85 | 5.05 | 6.25 | µA | |
| ADDR1 pin pull-up current | 3.85 | 5.05 | 6.25 | µA | ||
| IOC_BKP | Back-up overcurrent protection threshold | IMON short to GND | 38.3 | A | ||