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霍爾效應鎖存器和開關

DRV5012

現行

低功耗 (低至 3.3µA)、低電壓 (最高 5.5V) 霍爾效應鎖存器zzz

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產品規格表

DRV5012

現行
產品規格表 立即訂購

產品詳細資料

Type Latch Operate point (typ) (mT) 2 Operate point (max) (mT) 3.3 Release point (min) (mT) -3.3 Supply current (µA) 1.3, 142 Bandwidth (kHz) 0.002, 0.02, 2.5 Rating Catalog Operating temperature range (°C) -40 to 85 Output Push-Pull output driver
Type Latch Operate point (typ) (mT) 2 Operate point (max) (mT) 3.3 Release point (min) (mT) -3.3 Supply current (µA) 1.3, 142 Bandwidth (kHz) 0.002, 0.02, 2.5 Rating Catalog Operating temperature range (°C) -40 to 85 Output Push-Pull output driver
X2SON (DMR) 4 1.54 mm² (1.4 mm × 1.1 mm)
  • Industry-Leading Low-Power Consumption
  • Pin-Selectable Sampling Rate:
    • SEL = Low: 20 Hz Using 1.3 µA (1.8 V)
    • SEL = High: 2.5 kHz Using 142 µA (1.8 V)
  • 1.65- to 5.5-V Operating VCC Range
  • High Magnetic Sensitivity: ±2 mT (Typical)
  • Robust Hysteresis: 4 mT (Typical)
  • Push-Pull CMOS Output
  • Small and Thin X2SON Package
  • –40°C to +85°C Operating Temperature Range
  • Industry-Leading Low-Power Consumption
  • Pin-Selectable Sampling Rate:
    • SEL = Low: 20 Hz Using 1.3 µA (1.8 V)
    • SEL = High: 2.5 kHz Using 142 µA (1.8 V)
  • 1.65- to 5.5-V Operating VCC Range
  • High Magnetic Sensitivity: ±2 mT (Typical)
  • Robust Hysteresis: 4 mT (Typical)
  • Push-Pull CMOS Output
  • Small and Thin X2SON Package
  • –40°C to +85°C Operating Temperature Range

The DRV5012 device is an ultra-low-power digital-latch Hall effect sensor with a pin-selectable sampling rate. ™

When a south magnetic pole is near the top of the package and the BOP threshold is exceeded, the device drives a low voltage. The output stays low until a north pole is applied and the BRP threshold is crossed, which causes the output to drive a high voltage. Alternating north and south poles are required to toggle the output, and integrated hysteresis separates BOP and BRP to provide robust switching.

Using an internal oscillator, the DRV5012 device samples the magnetic field and updates the output at a rate of 20 Hz or 2.5 kHz, depending on the SEL pin. This dual-bandwidth feature can allow systems to monitor changes in movement while using minimal power.

The device operates from a VCC range of 1.65 V to 5.5 V, and is packaged in a small X2SON.

The DRV5012 device is an ultra-low-power digital-latch Hall effect sensor with a pin-selectable sampling rate. ™

When a south magnetic pole is near the top of the package and the BOP threshold is exceeded, the device drives a low voltage. The output stays low until a north pole is applied and the BRP threshold is crossed, which causes the output to drive a high voltage. Alternating north and south poles are required to toggle the output, and integrated hysteresis separates BOP and BRP to provide robust switching.

Using an internal oscillator, the DRV5012 device samples the magnetic field and updates the output at a rate of 20 Hz or 2.5 kHz, depending on the SEL pin. This dual-bandwidth feature can allow systems to monitor changes in movement while using minimal power.

The device operates from a VCC range of 1.65 V to 5.5 V, and is packaged in a small X2SON.
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技術文件

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重要文件 類型 標題 格式選項 下載最新的英文版本 日期
* 資料表 DRV5012 Ultra-Low-Power Digital-Latch Hall-Effect Sensor datasheet PDF | HTML 2017/8/18
Application brief Introduction to TI Magnetic Sense Simulator Features PDF | HTML 2023/12/5
使用指南 Texas Instruments' Magnetic Sense Simulator User's Guide PDF | HTML 2023/12/4
應用說明 Design Considerations & Measurement Results, Mechanical Hall-Effect Flow Meters PDF | HTML 2022/3/23
Application brief Using Hall-Effect Latches in Motorized Window Blinds PDF | HTML 2022/3/22
Application brief Designing With Hall-Effect Sensors for Rotary Flow Meter Applications PDF | HTML 2022/3/7
Application brief Incremental Rotary Encoders (Rev. B) PDF | HTML 2021/12/2
Application brief Two-State Selector Using Hall-Effect Sensors PDF | HTML 2021/12/1
Application brief Hall-Effect Sensors in Low-Power Applications (Rev. B) PDF | HTML 2021/10/15
技術文章 You can be an electromechanical engineer PDF | HTML 2017/11/10

設計與開發

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開發板

DRV5011-5012EVM — DRV5011 和 DRV5012 超低功耗、數位閂鎖霍爾效應感測器評估模組

DRV5011-5012EVM 有助於評估 DRV5012 和 DRV5011 霍爾效應感測器。DRV5012 是具有接腳可選取樣率的超低功耗數位閂鎖霍爾效應感測器。DRV5011 是超低功耗數位閂鎖霍爾效應感測器。  當磁鐵反極性或磁場達到特定閾值時，這些感測器會改變輸出狀態，以觸發感測器邏輯。
使用指南: PDF
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開發板

HALL-ADAPTER-EVM — 霍爾感測器匯接轉接器評估模組

使用 HALL-ADAPTER-EVM 可加快開關型、閂鎖型與線性霍爾感測器的原型製作與測試，提供一種快速、簡便且低成本的方式與小型 IC 介接。您可以使用隨附的 Samtec 端子排連接任何支援的霍爾感測器，或直接將其接線至現有電路。支援的封裝完整清單包括 SOT-23、TO-92、X2SON、SOT-23-5/6、0.4mm 節距的 2x2 WCSP 及 MSOP-8。
使用指南: PDF | HTML
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模擬工具

TI-MAGNETIC-SENSE-SIMULATOR — TI Magnetic sensing simulation tool

TI 磁感模擬器 (TIMSS) 網路工具可估計磁定位感測系統的磁通量密度與 TI 磁性感測器輸出。從我們的磁性感測器產品組合中選擇，以徹底模擬設計的機電性能。此工具支援各種磁鐵形狀、材等級與動作類型，讓您可輕鬆自訂設計。
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計算工具

HALL-PROXIMITY-DESIGN — Magnetic Sensing Proximity Tool

HALL-PROXIMITY-DESIGN 是一款軟體工具，可幫助磁鐵與霍爾效應感測器系統的快速重複設計。

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封裝 針腳 CAD 符號、佔位空間與 3D 模型
X2SON (DMR) 4 Ultra Librarian
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