SLASFM1A June 2025 – December 2025 AFE10004-EP
PRODUCTION DATA
In depletion-mode FETs, when a negative voltage is applied between the gate and source terminals, an area of carrier depletion is formed within the channel that restricts the flow of current. In the absence of a negative gate bias voltage, the channel is fully open and maximum current can flow from drain to source, which can quickly destroy the device through electrical overstress. As the gate bias voltage becomes more negative, the device reaches the pinch-off state, where all the drain-to-source current flow is restricted and the FET is effectively off.