SNAS849
December 2024
LMX2624-SP
ADVANCE INFORMATION
1
1
Features
2
Applications
3
Description
4
Pin Configuration and Functions
5
Specifications
5.1
Absolute Maximum Ratings
5.2
ESD Ratings
5.3
Recommended Operating Conditions
5.4
Thermal Information
5.5
Electrical Characteristics
5.6
Timing Requirements
5.7
Timing Diagrams
6
Detailed Description
6.1
Overview
6.2
Functional Block Diagram
6.3
Feature Description
6.3.1
Reference Oscillator Input
6.3.2
Reference Path
6.3.2.1
OSCin Doubler (OSC_2X)
6.3.2.2
Pre-R Divider (PLL_R_PRE)
6.3.2.3
Post-R Divider (PLL_R)
6.3.3
State Machine Clock
6.3.4
PLL Phase Detector and Charge Pump
6.3.5
N Divider and Fractional Circuitry
6.3.6
MUXout Pin
6.3.6.1
Serial Data Output for Readback
6.3.6.2
Lock Detect Indicator Set as Type “VCOcal” or "Vtune and VCOcal"
6.3.7
VCO (Voltage-Controlled Oscillator)
6.3.7.1
VCO Calibration
6.3.7.1.1
Double Buffering (Shadow Registers)
6.3.7.2
Watchdog Feature
6.3.7.3
RECAL Feature
6.3.7.4
Determining the VCO Gain
6.3.8
Channel Divider
6.3.9
Output Mute Pin and Ping Pong Approaches
6.3.10
Output Frequency Doubler
6.3.11
Output Buffer
6.3.12
Power-Down Modes
6.3.13
Pin-Mode Integer Frequency Generation
6.3.14
Treatment of Unused Pins
6.3.15
Phase Synchronization
6.3.15.1
General Concept
6.3.15.2
Categories of Applications for SYNC
6.3.15.3
Procedure for Using SYNC
6.3.15.4
SYNC Input Pin
6.3.16
Phase Adjust
6.3.17
Fine Adjustments for Phase Adjust and Phase SYNC
6.3.18
SYSREF
6.3.18.1
Programmable Fields
6.3.18.2
Input and Output Pin Formats
6.3.18.2.1
SYSREF Output Format
6.3.18.3
Examples
6.3.18.4
SYSREF Procedure
6.4
Device Functional Modes
6.5
Programming
6.5.1
Recommended Initial Power-Up Sequence
6.5.2
Recommended Sequence for Changing Frequencies
7
Register Maps
7.1
Device Registers
8
Application and Implementation
8.1
Application Information
8.1.1
OSCin Configuration
8.1.2
OSCin Slew Rate
8.1.3
RF Output Buffer Power Control
8.1.4
RF Output Buffer Pullup
8.1.5
RF Output Treatment for the Complimentary Side
8.1.5.1
Single-ended Termination of Unused Output
8.2
Typical Application
8.2.1
Design Requirements
8.2.2
Detailed Design Procedure
8.2.3
Application Curve
8.3
Power Supply Recommendations
8.4
Layout
8.4.1
Layout Guidelines
8.4.2
Layout Example
8.4.3
Footprint Example on PCB Layout
8.4.4
Radiation Environments
8.4.4.1
Total Ionizing Dose
8.4.4.2
Single Event Effect
9
Device and Documentation Support
9.1
Device Support
9.1.1
Development Support
9.2
Documentation Support
9.2.1
Related Documentation
9.3
Receiving Notification of Documentation Updates
9.4
Support Resources
9.5
Trademarks
9.6
Electrostatic Discharge Caution
9.7
Glossary
10
Revision History
11
Mechanical, Packaging, and Orderable Information
11.1
Engineering Samples
11.2
Package Option Addendum
11.3
Tape and Reel Information
1
Features
SMD 5962R2321001PXE
Total ionizing dose 100Krad (ELDRS-free)
Single event latch-up (SEL) immune up to 75MeV-cm
2
/mg
Single event functional interrupt (SEFI) immune up to 75MeV-cm
2
/mg
Wide band frequency synthesizer : 5MHz to 28GHz output frequency
–101dBc/Hz phase noise at 100kHz offset with 24GHz carrier
60fs RMS jitter at 24GHz (1kHz to 300MHz)
Programmable output power
PLL key specifications:
Figure of merit: –236dBc/Hz
Normalized 1/f noise: –129dBc/Hz
Up to 200MHz phase detector frequency
Synchronization of output phase across multiple devices
Independent mute pins for RFoutA and RFoutB with 200ns mute/unmute time
Support for SYSREF with 9ps resolution programmable delay
3.3V single power supply operation
Pin-mode: Pin configurable N divider and output divider in Integer PLL mode
10 × 10mm² 64 lead QFP package
Operating temperature range: –55°C to +125°C
Supported by
PLLatinum™
Simulator design tool