STDA033 October   2026 MSPM0G3105-Q1 , MSPM0G3106-Q1 , MSPM0G3107-Q1 , MSPM0G3505-Q1 , MSPM0G3506-Q1 , MSPM0G3507-Q1 , MSPM0L1227-Q1 , MSPM0L1228-Q1 , MSPM0L2227-Q1 , MSPM0L2228-Q1 , MSPM33C321A

 

  1.   1
  2.   Abstract
  3.   Trademarks
  4. 1Introduction
    1.     How Does an Electromagnetic Field Start in a Circuit?
    2.     Near-Field and Far-Field Electromagnetic Fields
  5. 2Common Sources of EMI in Electronic Designs
    1. 2.1 Resistors
      1. 2.1.1 Equivalent Series Inductance (ESL)
      2. 2.1.2 Shunt Capacitance
      3. 2.1.3 Parasitic Capacitance to Ground
    2. 2.2 Capacitors
      1. 2.2.1 Equivalent Series Resistance (ESR)
      2. 2.2.2 Equivalent Series Inductance (ESL)
      3. 2.2.3 Leakage Resistance
      4. 2.2.4 Dielectric Absorption (Soakage)
    3. 2.3 Inductors
      1. 2.3.1 Direct Current Resistance (DCR)
      2. 2.3.2 Parasitic Capacitance
      3. 2.3.3 Core Losses (Magnetic Parasitics)
    4. 2.4 Summary of Discrete Component EMI Considerations
    5. 2.5 Design Deficiencies
    6. 2.6 Sources Specific to MCUs
      1. 2.6.1 Clock Circuits and Oscillators
    7. 2.7 Other Common Sources
      1. 2.7.1 High-Speed Digital Buses
      2. 2.7.2 I/O Output Transitions
      3. 2.7.3 Floating Components
      4. 2.7.4 External Environmental Sources
  6. 3Mitigation Techniques to Minimize EMI and Optimize Board Performance
    1. 3.1 Power Supply Capacitor Selection and Placement
    2. 3.2 Capacitor Placement
    3. 3.3 Layer Stack-Up Optimization
      1. 3.3.1 Good Stack-Up Traits
      2. 3.3.2 Stitching and Shielding Optimization Techniques
    4. 3.4 Trace Routing
    5. 3.5 Passive Pi Filtering
    6. 3.6 Shielding, Grounding, and Cable Boundaries
    7. 3.7 Transient and ESD Current Paths
  7. 4EMC Verification and Troubleshooting
    1. 4.1 Emissions and Immunity as Port Problems
    2. 4.2 Pre-Compliance Measurement Toolkit
    3. 4.3 A Frequency-to-Structure Debug Method
    4. 4.4 Interpreting Common Spectral Signatures
    5. 4.5 Integrated Design Review Checklist
  8. 5Conclusion

2.3.2 Parasitic Capacitance

Cause: Also known as inter-winding capacitance. Parasitic capacitance occurs because the individual turns of the wire are separated by an insulator (enamel), creating thousands of tiny "parallel plate" capacitors between the windings.

Impact:At high frequencies, this capacitance provides a "bypass" path for current, allowing high-frequency noise to skip over the inductance entirely. Self-Resonant Frequency (SRF): This is the point where the inductive reactance equals the capacitive reactance. Above the SRF, the inductor behaves like a capacitor.

Self-Resonant Frequency (SRF): This is the point where the inductive reactance equals the capacitive reactance. Above the SRF, the inductor behaves like a capacitor.