The LMG2652 is a 650V 140mΩ GaN power-FET half bridge. The LMG2652 simplifies design, reduces component count, and reduces board space by integrating half-bridge power FETs, gate drivers, bootstrap diode, and high-side gate-drive level shifter in a 6mm by 8mm QFN package.
The low-side current-sense emulation reduces power dissipation compared to the traditional current-sense resistor and allows the low-side thermal pad to be connected to the cooling PCB power ground.
The high-side GaN power FET can be controlled with either the low-side referenced gate-drive pin (INH) or the high-side referenced gate-drive pin (GDH). The high-side gate-drive signal level shifter reliably transmits the INH pin signal to the high-side gate driver in challenging power switching environments. The smart-switched GaN bootstrap FET has no diode forward-voltage drop, avoids overcharging the high-side supply, and has zero reverse-recovery charge.
The LMG2652 supports converter light-load efficiency requirements and burst-mode operation with low quiescent currents and fast start-up times. Protection features include FET turn-on interlock, under-voltage lockout (UVLO), cycle-by-cycle current limit, and over-temperature shut down.
| Top documentation | Type | Title | Format options | Date |
|---|---|---|---|---|
| * | Data sheet | LMG2652 650V 140 mΩ GaN Half Bridge With Integrated Driver and Current Sense Emulation datasheet | PDF | HTML | Jan 31, 2025 |
| Product overview | HVDC QFN-Packaged GaN Power Devices | PDF | HTML | Mar 31, 2026 |
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The LMG2652 daughter card is designed to provide a quick and easy platform to evaluate TI integrated GaN devices in any half-bridge topology. The board is designed to be interfaced with a larger system using the 6 power pins and 12 digital pins on the bottom edge of the board in a socket style (...)
| Package | Pins | CAD symbols, footprints & 3D models |
|---|---|---|
| VQFN (RFB) | 19 | Ultra Librarian |
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