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Product details

Parameters

RDS (on) (Milliohm) 50 VDS (Max) (V) 600 ID (Max) (A) 12 Approx. price (US$) 9.80 | 1ku Rating Catalog open-in-new Find other Gallium nitride (GaN) ICs

Package | Pins | Size

VQFN (RWH) 32 64 mm² 8 x 8 open-in-new Find other Gallium nitride (GaN) ICs

Features

  • TI GaN FET reliability qualified with in-application hard-switching accelerated stress profiles
  • Enables high density power conversion designs
    • Superior system performance over cascode or stand-alone GaN FETs
    • Low inductance 8 mm x 8 mm QFN package for ease of design, and layout
    • Adjustable drive strength for switching performance and EMI control
    • Digital fault status output signal
    • Only +12 V unregulated supply needed
  • Integrated gate driver
    • Zero common source inductance
    • 20 ns Propagation delay for MHz operation
    • Trimmed gate bias voltage to compensate for threshold variations ensures reliable switching
    • 25 to 100V/ns User adjustable slew rate
  • Robust protection
    • Requires no external protection components
    • Overcurrent protection with less than 100 ns response
    • Greater than 150 V/ns Slew rate immunity
    • Transient overvoltage immunity
    • Overtemperature protection
    • Under voltage lock out (UVLO) Protection on all supply rails
  • Robust protection
    • LMG3410R050: Latched overcurrent protection
    • LMG3411R050: Cycle-by-cycle overcurrent protection

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      open-in-new Find other Gallium nitride (GaN) ICs

      Description

      The LMG341xR050 GaN power stage with integrated driver and protection enables designers to achieve new levels of power density and efficiency in power electronics systems. The LMG341x’s inherent advantages over silicon MOSFETs include ultra-low input and output capacitance, zero reverse recovery to reduce switching losses by as much as 80%, and low switch node ringing to reduce EMI. These advantages enable dense and efficient topologies like the totem-pole PFC.

      The LMG341xR050 provides a smart alternative to traditional cascode GaN and standalone GaN FETs by integrating a unique set of features to simplify design, maximize reliability and optimize the performance of any power supply. Integrated gate drive enables 100 V/ns switching with near zero Vds ringing, less than 100 ns current limiting response self-protects against unintended shoot-through events, overtemperature shutdown prevents thermal runaway, and system interface signals provide self-monitoring capability.

      open-in-new Find other Gallium nitride (GaN) ICs
    Download

    More information

    Get started with your GaN design today with the LMG3410R050 development kit:

    Technical documentation

    Design & development

    For additional terms or required resources, click any title below to view the detail page where available.

    Hardware development

    EVALUATION BOARDS Download
    document-generic User guide
    $199.00
    Description
    LMG3410EVM-018 configures two LMG3410R050 600-V GaN FETs with Integrated driver and protection, in a half bridge. This EVM comes with all the necessary auxiliary peripheral circuitry, and is designed to work in conjunction with larger systems.
    Features
    • Input voltage operates up to 600V
    • Simple open loop design to evaluate performance of LMG3410
    • Single PWM input on board for PWM signal with 50 ns dead time
    • Convenient probe points for logic and power stage measurements with oscilloscope probes that have short ground spring probes
    EVALUATION BOARDS Download
    document-generic User guide
    $199.00
    Description
    The LMG34XX-BB-EVM is an easy to use breakout board to configure any LMG34XX half bridge board, such as the LMG3410-HB-EVM, as a synchronous buck converter.  By providing a power stage, bias power and logic circuitry this EVM allows for quick measurements of the GaN device switching.  This (...)
    Features
    • Input voltage operates up to 600V
    • Simple open loop design to evaluate performance of LMG3410
    • Single PWM input on board for PWM signal with 50 ns dead time
    • Convenient probe points for logic and power stage measurements with oscilloscope probes that have short ground spring probes

    Design tools & simulation

    SIMULATION MODELS Download
    SNOM676.ZIP (57 KB) - PSpice Model

    CAD/CAE symbols

    Package Pins Download
    VQFN (RWH) 32 View options

    Ordering & quality

    Support & training

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