Calculation tool
LMGXX-GAN-LLC-CALC — GaN LLC resonant converter device loss calculator
Device Loss Calculator can be used to evaluate different devices for different topologies of the LLC Resonant Converter
LMG3425R030
600-V 30-mΩ GaN FET with integrated driver, protection, temperature reporting and ideal diode mode
Data sheet
LMG3425R030
- Qualified for JEDEC JEP180 for hard-switching topologies
- 600V GaN-on-Si FET with integrated gate driver
- Integrated high precision gate bias voltage
- 200V/ns FET hold-off
- 2.2MHz switching frequency
- 20V/ns to 150V/ns slew rate for optimization of switching performance and EMI mitigation
- Operates from 7.5V to 18V supply
- Robust protection
- Cycle-by-cycle overcurrent and latched short-circuit protection with < 100ns response
- Withstands 720V surge while hard-switching
- Self-protection from internal overtemperature and UVLO monitoring
- Advanced power management
- Digital temperature PWM output
- Ideal diode mode reduces third-quadrant losses
The LMG3425R030 GaN FET with integrated driver and protection is targeted at switch-mode power converters and enables designers to achieve new levels of power density and efficiency.
The LMG3425R030 integrates a silicon driver that enables switching speed up to 150V/ns. TI’s integrated precision gate bias results in higher switching SOA compared to discrete silicon gate drivers. This integration, combined with TI’s low-inductance package, delivers clean switching and minimal ringing in hard-switching power supply topologies. Adjustable gate drive strength allows control of the slew rate from 20V/ns to 150V/ns, which can be used to actively control EMI and optimize switching performance.
Advanced power management features include digital temperature reporting, fault detection, and ideal diode mode. The temperature of the GaN FET is reported through a variable duty cycle PWM output, which simplifies managing device loading. Faults reported include overcurrent, short-circuit, overtemperature, VDD UVLO, and high-impedance RDRV pin. Ideal diode mode reduces third-quadrant losses by enabling dead-time control.
Technical documentation
No results found. Please clear your search and try again.
View all 12 Design & development
For additional terms or required resources, click any title below to view the detail page where available.
Evaluation board
LMG342X-BB-EVM — LMG342x evaluation module
The LMG342X-BB-EVM is an easy-to-use breakout board to configure any LMG342xR0x0 half-bridge boards, such as the LMG3422EVM-043, as a synchronous buck converter. By providing a power stage, bias power and logic circuitry, this evaluation module (EVM) allows for quick measurements of the gallium (...)
Daughter card
LMG3425EVM-043 — LMG3425R030 600-V 30-mΩ with ideal diode mode half-bridge daughter card
LMG3425EVM-043 configures two LMG3425R030 GaN FETs in a half-bridge with the latched over current protection function and all the necessary auxiliary peripheral circuitry. This EVM is designed to work in conjunction with larger systems.
Simulation model
LMG3422R0x0 LMG3425R0x0 LMG3522R030 and LMG3522R030-Q1 PLECS Simulation Model
SNOM768.ZIP (340 KB) - PLECS model
| Package | Pins | CAD symbols, footprints & 3D models |
|---|---|---|
| VQFN (RQZ) | 54 | Ultra Librarian |
Ordering & quality
Information included:
- RoHS
- REACH
- Device marking
- Lead finish/Ball material
- MSL rating/Peak reflow
- MTBF/FIT estimates
- Material content
- Qualification summary
- Ongoing reliability monitoring
Information included:
- Fab location
- Assembly location
Recommended products may have parameters, evaluation modules or reference designs related to this TI product.
Support & training
TI E2E™ forums with technical support from TI engineers
Content is provided "as is" by TI and community contributors and does not constitute TI specifications. See terms of use.
If you have questions about quality, packaging or ordering TI products, see TI support.