600-V 30-mΩ GaN FET with integrated driver, protection, temperature reporting and ideal diode mode
Product details
Parameters
Features
- Qualified for JEDEC JEP180 for hard-switching topologies
- 600-V GaN-on-Si FET with Integrated gate driver
- Integrated high precision gate bias voltage
- 200-V/ns CMTI
- 2.2-MHz switching frequency
- 30-V/ns to 150-V/ns slew rate for optimization of switching performance and EMI mitigation
- Operates from +12-V unregulated supply
- Robust protection
- Cycle-by-cycle overcurrent and latched short-circuit protection with < 100-ns response
- Withstands 720-V surge while hard-switching
- Self-protection from internal overtemperature and UVLO monitoring
- Advanced power management
- Digital temperature PWM output
- Ideal diode mode reduces third-quadrant losses in LMG3425R030
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Description
The LMG342xR030 GaN FET with integrated driver and protection enables designers to achieve new levels of power density and efficiency in power electronics systems.
The LMG342xR030 integrates a silicon driver that enables switching speed up to 150 V/ns. TI’s integrated precision gate bias results in higher switching SOA compared to discrete silicon gate drivers. This integration, combined with our low-inductance package, delivers clean switching and minimal ringing in hard-switching power supply topologies. Other features, including adjustable gate drive strength for EMI control, overtemperature, and robust overcurrent protection with fault indication, provide optimized BOM cost, board size, and footprint.
Advanced power management features include digital temperature reporting and TI’s ideal diode mode. The temperature of the GaN FET is reported through a variable duty cycle PWM output, which enables the system to optimally manage loading. Ideal diode mode maximizes efficiency by reducing third-quadrant losses by enabling adaptive dead-time control.
Same functionality and pinout but is not an equivalent to the compared device:
Similar but not functionally equivalent to the compared device:
Technical documentation
Type | Title | Date | |
---|---|---|---|
* | Datasheet | LMG342xR030 600-V 30-mΩ GaN FET with Integrated Driver, Protection, and Temp datasheet (Rev. A) | Oct. 28, 2020 |
Technical articles | Get more from your GaN-based digital power designs with a C2000™ real-time MCU | Dec. 17, 2020 | |
Technical articles | How GaN FETs with integrated drivers and self-protection will enable the next generation of industrial power designs | Nov. 17, 2020 | |
Application note | Maximizing the Performance of GaN with Ideal Diode Mode | Oct. 30, 2020 | |
User guide | LMG342XEVM-04X User Guide | Oct. 26, 2020 | |
More literature | A Generalized Approach to Determine the Switching Lifetime of a GaN FET | Oct. 20, 2020 | |
Application note | Thermal Performance of QFN12x12 Package for 600V, GaN Power Stage | Sep. 29, 2020 |
Design & development
For additional terms or required resources, click any title below to view the detail page where available.Hardware development
Description
Features
- Input voltage operates up to 600 V
- Simple open loop design to evaluate performance of LMG342XR0XX
- Single/Dual PWM input on board for PWM signal with variable dead time
- Latched over current protection function
- Convenient probe points for logic and power stage measurements with oscilloscope probes that (...)
Description
Features
- Input voltage operates up to 600 V
- Simple open loop design to evaluate performance of LMG342XR0XX
- Single/Dual PWM input on board for PWM signal with variable dead time
- Cycle-by-cycle over current protection function
- Convenient probe points for logic and power stage measurements with oscilloscope probes (...)
Design tools & simulation
Features
- Leverages Cadence PSpice Technology
- Preinstalled library with a suite of digital models to enable worst-case timing analysis
- Dynamic updates ensure you have access to most current device models
- Optimized for simulation speed without loss of accuracy
- Supports simultaneous analysis of multiple products
- (...)
CAD/CAE symbols
Package | Pins | Download |
---|---|---|
(RQZ) | 54 | View options |
Ordering & quality
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- REACH
- Device marking
- Lead finish/Ball material
- MSL rating/Peak reflow
- MTBF/FIT estimates
- Material content
- Qualification summary
- Ongoing reliability monitoring
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Support & training
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