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UCC27211A

AKTIV

Halbbrücken-Gate-Treiber, 120 V, 4,5 A, mit 8 V UVLO und negativer Spannungsbehandlung

Produktdetails

Bootstrap supply voltage (max) (V) 120 Power switch MOSFET Input supply voltage (min) (V) 8 Input supply voltage (max) (V) 17 Peak output current (A) 4.5 Operating temperature range (°C) -40 to 150 Undervoltage lockout (typ) (V) 8 Rating Catalog Propagation delay time (µs) 0.02 Rise time (ns) 7.2 Fall time (ns) 5.5 Iq (mA) 0.001 Input threshold TTL Channel input logic TTL Switch node voltage (V) -20 Features Integrated bootstrap diode, Negative Voltage Handling on Input Driver configuration Dual, Noninverting, TTL compatible
Bootstrap supply voltage (max) (V) 120 Power switch MOSFET Input supply voltage (min) (V) 8 Input supply voltage (max) (V) 17 Peak output current (A) 4.5 Operating temperature range (°C) -40 to 150 Undervoltage lockout (typ) (V) 8 Rating Catalog Propagation delay time (µs) 0.02 Rise time (ns) 7.2 Fall time (ns) 5.5 Iq (mA) 0.001 Input threshold TTL Channel input logic TTL Switch node voltage (V) -20 Features Integrated bootstrap diode, Negative Voltage Handling on Input Driver configuration Dual, Noninverting, TTL compatible
VSON (DRM) 8 16 mm² (4 mm × 4 mm)
  • –40°C to +150°C junction temperature range
  • Drives two N-channel MOSFETs in high-side and low-side configuration with independent inputs
  • Maximum boot voltage 120V DC
  • 3.7A source, 4.5A sink output currents
  • Input pins can tolerate –10V to +20V and are independent of supply voltage range
  • TTL compatible inputs
  • 8V to 17V VDD operating range, (20V ABS MAX)
  • 7.2ns rise and 5.5ns fall time with 1000pF load
  • Fast propagation delay times (20ns typical)
  • 4ns delay matching
  • Symmetrical undervoltage lockout for high-side and low-side driver
  • Industry standard package available
    • 4mm × 4mm SON-8
  • –40°C to +150°C junction temperature range
  • Drives two N-channel MOSFETs in high-side and low-side configuration with independent inputs
  • Maximum boot voltage 120V DC
  • 3.7A source, 4.5A sink output currents
  • Input pins can tolerate –10V to +20V and are independent of supply voltage range
  • TTL compatible inputs
  • 8V to 17V VDD operating range, (20V ABS MAX)
  • 7.2ns rise and 5.5ns fall time with 1000pF load
  • Fast propagation delay times (20ns typical)
  • 4ns delay matching
  • Symmetrical undervoltage lockout for high-side and low-side driver
  • Industry standard package available
    • 4mm × 4mm SON-8

The UCC27211A device driver is based on the popular UCC27201 MOSFET drivers; but, this device offers several significant performance improvements.

The peak output pullup and pulldown current has been increased to 3.7A source and 4.5A sink and thereby allows for driving large power MOSFETs with minimized switching losses during the transition through the Miller Plateau of the MOSFET. The input structure can directly handle –10VDC, which increases robustness and also allows direct interface to gate-drive transformers without using rectification diodes. The inputs are also independent of supply voltage and have a 20V maximum rating.

The switching node of the UCC27211A (HS pin) can handle –(24 - VDD) V maximum, which allows the high-side channel to be protected from inherent negative voltages caused by parasitic inductance and stray capacitance. The UCC27211A (TTL inputs) has increased hysteresis that allows for interface to analog or digital PWM controllers with enhanced noise immunity.

The low-side and high-side gate drivers are independently controlled and matched to 4ns between the turn on and turn off of each other. An on-chip 120V rated bootstrap diode eliminates the external discrete diodes. Undervoltage lockout is provided for both the high-side and the low-side drivers which provides symmetric turn on and turn off behavior and forces the outputs low if the drive voltage is below the specified threshold.

The UCC27211A device driver is based on the popular UCC27201 MOSFET drivers; but, this device offers several significant performance improvements.

The peak output pullup and pulldown current has been increased to 3.7A source and 4.5A sink and thereby allows for driving large power MOSFETs with minimized switching losses during the transition through the Miller Plateau of the MOSFET. The input structure can directly handle –10VDC, which increases robustness and also allows direct interface to gate-drive transformers without using rectification diodes. The inputs are also independent of supply voltage and have a 20V maximum rating.

The switching node of the UCC27211A (HS pin) can handle –(24 - VDD) V maximum, which allows the high-side channel to be protected from inherent negative voltages caused by parasitic inductance and stray capacitance. The UCC27211A (TTL inputs) has increased hysteresis that allows for interface to analog or digital PWM controllers with enhanced noise immunity.

The low-side and high-side gate drivers are independently controlled and matched to 4ns between the turn on and turn off of each other. An on-chip 120V rated bootstrap diode eliminates the external discrete diodes. Undervoltage lockout is provided for both the high-side and the low-side drivers which provides symmetric turn on and turn off behavior and forces the outputs low if the drive voltage is below the specified threshold.

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UCC27301A AKTIV Halbbrücken-Treiber, 120 V, 4,5 A, mit 8 V UVLO, Verriegelung und Aktivierungsoptionen More recent driver with input interlock, smaller package options and similar electrical characteristics
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Technische Dokumentation

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Top-Dokumentation Typ Titel Format-Optionen Neueste englische Version herunterladen Datum
* Datenblatt UCC27211A 120V, 3.7A/4.5A Half-Bridge Driver with 8V UVLO datasheet (Rev. D) PDF | HTML 18.07.2024
Product overview UCC272xx and UCC273xx: 120V Half-Bridge Gate Drivers for High-Powered Applications (Rev. A) PDF | HTML 02.03.2026
Anwendungshinweis Mapping Application Requirements with the 120V Halfbridge Gate Driver (Rev. A) PDF | HTML 27.02.2026
Anwendungshinweis Using Half-Bridge Gate Driver to Achieve 100% Duty Cycle for High Side FET PDF | HTML 25.03.2024
Anwendungshinweis Challenges and Solutions for Half-Bridge Gate Drivers in Bidirectional DC-DC Converters PDF | HTML 24.01.2024
Technischer Artikel For efficiencies’ sake – how to integrate bidirectional power flow into your UPS design (part 1) PDF | HTML 11.01.2024
Anwendungshinweis Bootstrap Circuitry Selection for Half Bridge Configurations (Rev. A) PDF | HTML 08.09.2023
Anwendungshinweis Comparative Analysis of Two Different Methods for Gate-Drive Current Boosting (Rev. A) PDF | HTML 17.02.2022
Anwendungshinweis Voltage Fed Full Bridge DC-DC & DC-AC Converter High-Freq Inverter Using C2000 (Rev. D) 07.04.2021
Anwendungshinweis Understanding and comparing peak current capability of gate drivers PDF | HTML 30.03.2021
Anwendungshinweis Implementing High-Side Switches Using Half-Bridge Gate Drivers for 48-V Battery. 12.05.2020
Application brief External Gate Resistor Selection Guide (Rev. A) 28.02.2020
Application brief Understanding Peak IOH and IOL Currents (Rev. A) 28.02.2020
Application brief Small Price Competitive 100-V Driver for 48-V BLDC Motor Drives 22.10.2019
Whitepaper Power Electronics in Motor Drives: Where is it? (Rev. A) 01.10.2019
Anwendungshinweis Maximizing DC/DC converter designs with UCC27282 18.01.2019
Anwendungshinweis UCC27282 Improving motor drive system robustness 11.01.2019
Weitere Dokumente Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) 29.10.2018
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