SNVSC75B April 2023 – September 2025 LM5171-Q1
PRODUCTION DATA
The LM5171-Q1 integrates a LDO driver to drive an external N-channel MOSFET to generate a 9V bias supply at the VCC pin. The VCC pin also accepts an external supply of 9.5V to 12V and the device turns off the LDO driver to save the power dissipation in the external LDO MOSFET. Figure 6-1 shows typical connections of the bias supply.
When an external supply is used, it is recommended to add a block diode to prevent from discharging the VCC during transient in the external supply. If an external supply voltage is greater than 12V, a 10V LDO or switching regulator is used to produce 10V for VCC. The VCC voltage is directly fed to the low-side MOSFET drivers. Place a 1μF to 2.2μF ceramic capacitance between the VCC and PGND pins to bypass the driver switching currents. For the LDO MOSFET, it is recommended to have the Ciss around 300pF or below.
The internal VCC undervoltage (UV) detection circuit monitors the VCC voltage. When the VCC voltage falls below 8V on the falling edge, the LM5171-Q1 is held in the shutdown state. For normal operation, a VCC voltage greater than 8.5V on the rising edge is needed.
Once the VCC voltage rises above the VCC_UV, the VDD and VREF regulators turn on. The VDD regulator provides 5V output with a loading capability of 10mA. Place a 1μF ceramic capacitor between VDD and AGND. The VREF is a 1% tolerance 3.5V voltage reference with a loading capability of 2mA. Place 0.1 μF ceramic capacitor between VREF and AGND.