Gallium nitride (GaN) ICs – Technical documents
This application note discusses the most important trade offs and considerations for TI’s LMG341XRxxx GaN power stage family, including guidance for PCB layout, thermal interface, heat sink selection and mounting methods.
This application report provides a detailed explanation of the diode-like behavior of GaN in reverse current conduction, based on the study on its lateral structure.
GaN FETs are shown to be robust to power line surges under actual operating conditions for the first time. This seminal work results in a comprehensive methodology for surge-robust power supply design with GaN.
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|Thermal Design and Performance of Top-Side Cooled QFN 12x12 Package||3736||05 Mar 2021|
|Thermal Performance of QFN12x12 Package for 600V, GaN Power Stage (Rev. A)||2937||19 Nov 2020|
|Maximizing the Performance of GaN with Ideal Diode Mode||895||30 Oct 2020|
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|Current Sense Amplifiers (Rev. D)||1772||04 Apr 2018|
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|Four key design considerations when adding energy storage to solar power grids||1061||22 Mar 2021|
|結合 TI GaN FETs 與 C2000™ 即時 MCU，實現功率密集與有效率的數位電源系統||769||18 Mar 2021|
|TI GaN FET와 C2000™ 실시간 MCU를 결합하여 전력 밀도가 높고 효율적인 전원 시스템 달성||651||18 Mar 2021|