Gallium nitride (GaN) ICs – Technical documents
This application note discusses the most important trade offs and considerations for TI’s LMG341XRxxx GaN power stage family, including guidance for PCB layout, thermal interface, heat sink selection and mounting methods.
This application report provides a detailed explanation of the diode-like behavior of GaN in reverse current conduction, based on the study on its lateral structure.
GaN FETs are shown to be robust to power line surges under actual operating conditions for the first time. This seminal work results in a comprehensive methodology for surge-robust power supply design with GaN.
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|Maximizing the Performance of GaN with Ideal Diode Mode||895||30 Oct 2020|
|Thermal Performance of QFN12x12 Package for 600V, GaN Power Stage||2902||29 Sep 2020|
|Thermal Considerations for Designing a GaN Power Stage (Rev. B)||2603||04 Aug 2020|
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|Current Sense Amplifiers (Rev. D)||1772||04 Apr 2018|
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|Achieve Power-Dense and Efficient Digital Power Systems by Combining TI GaN FETs||883||05 Jan 2021|
|Achieving High Efficiency and Enabling Integration in EV Powertrain Subsystems||972||18 Nov 2020|
|Direct-drive configuration for GaN devices (Rev. A)||1366||19 Nov 2018|