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Gallium nitride (GaN) ICs – Technical documents

Thermal considerations for designing a GaN power stage

This application note discusses the most important trade offs and considerations for TI’s LMG341XRxxx GaN power stage family, including guidance for PCB layout, thermal interface, heat sink selection and mounting methods.

Does GaN have a body diode? - understanding the third quadrant operation of GaN

This application report provides a detailed explanation of the diode-like behavior of GaN in reverse current conduction, based on the study on its lateral structure.

A new approach to validate GaN FET reliability to power-line surges under use-conditions

GaN FETs are shown to be robust to power line surges under actual operating conditions for the first time. This seminal work results in a comprehensive methodology for surge-robust power supply design with GaN.

Overcurrent protection in high-density GaN power designs

This application note explains the importance of this overcurrent protection as well as “latched” or “cycle-by-cycle” modes of operation.

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Application note

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Title
Type
Size (KB)
Date
Maximizing the Performance of GaN with Ideal Diode Mode PDF 895 30 Oct 2020
Thermal Performance of QFN12x12 Package for 600V, GaN Power Stage PDF 2902 29 Sep 2020
Thermal Considerations for Designing a GaN Power Stage (Rev. B) PDF 2603 04 Aug 2020

Selection guide

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Title
Type
Size (KB)
Date
Current Sense Amplifiers (Rev. D) PDF 1772 04 Apr 2018