The LMG2640 is
a 650V GaN power-FET half bridge intended for switch mode power supply applications. The
LMG2640 simplifies design, reduces component count, and
reduces board space by integrating half-bridge power FETs, gate drivers, bootstrap diode,
and high-side gate-drive level shifter in a 9mm by 7mm QFN package.
The low-side current-sense emulation reduces power dissipation compared to the
traditional current-sense resistor and allows the low-side thermal pad to be connected to
the cooling PCB power ground.
The high-side gate-drive signal level
shifter eliminates noise and burst-mode power dissipation problems found with external
solutions. The smart-switched GaN bootstrap FET has no diode forward-voltage drop, avoids
overcharging the high-side supply, and has zero reverse-recovery charge.
The LMG2640
supports converter light-load efficiency requirements and burst-mode operation with low
quiescent currents and fast start-up times. Protection features include FET turn-on
interlock, under-voltage lockout (UVLO), cycle-by-cycle current limit, and over-temperature
shut down.
The LMG2640 is
a 650V GaN power-FET half bridge intended for switch mode power supply applications. The
LMG2640 simplifies design, reduces component count, and
reduces board space by integrating half-bridge power FETs, gate drivers, bootstrap diode,
and high-side gate-drive level shifter in a 9mm by 7mm QFN package.
The low-side current-sense emulation reduces power dissipation compared to the
traditional current-sense resistor and allows the low-side thermal pad to be connected to
the cooling PCB power ground.
The high-side gate-drive signal level
shifter eliminates noise and burst-mode power dissipation problems found with external
solutions. The smart-switched GaN bootstrap FET has no diode forward-voltage drop, avoids
overcharging the high-side supply, and has zero reverse-recovery charge.
The LMG2640
supports converter light-load efficiency requirements and burst-mode operation with low
quiescent currents and fast start-up times. Protection features include FET turn-on
interlock, under-voltage lockout (UVLO), cycle-by-cycle current limit, and over-temperature
shut down.