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UCC5880-Q1

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Isolierter 20-A-IGBT/SiC-MOSFET-Echtzeit-Gate-Treiber mit variabler Stärke für die Automobilindustri

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Datenblatt

UCC5880-Q1

AKTIV
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Produktdetails

Number of channels 1 Isolation rating Reinforced Withstand isolation voltage (VISO) (Vrms) 5000 Working isolation voltage (VIOWM) (Vrms) 1414 Transient isolation voltage (VIOTM) (VPK) 7071 Power switch IGBT, SiCFET Peak output current (A) 20 Features Active miller clamp, Disable, Enable, Fault reporting, High CMTI, Power good, Programmable dead time, Real-time variable gate drive strength, Short circuit protection, Soft turn-off, Two-level turn-off Output VCC/VDD (max) (V) 30 Output VCC/VDD (min) (V) 12 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 5.5 TI functional safety category Functional Safety-Compliant Propagation delay time (µs) 0.15 Input threshold CMOS Operating temperature range (°C) -40 to 125 Rating Automotive Bootstrap supply voltage (max) (V) 1414 Rise time (ns) 55 Fall time (ns) 55 Undervoltage lockout (typ) (V) Programmable
Number of channels 1 Isolation rating Reinforced Withstand isolation voltage (VISO) (Vrms) 5000 Working isolation voltage (VIOWM) (Vrms) 1414 Transient isolation voltage (VIOTM) (VPK) 7071 Power switch IGBT, SiCFET Peak output current (A) 20 Features Active miller clamp, Disable, Enable, Fault reporting, High CMTI, Power good, Programmable dead time, Real-time variable gate drive strength, Short circuit protection, Soft turn-off, Two-level turn-off Output VCC/VDD (max) (V) 30 Output VCC/VDD (min) (V) 12 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 5.5 TI functional safety category Functional Safety-Compliant Propagation delay time (µs) 0.15 Input threshold CMOS Operating temperature range (°C) -40 to 125 Rating Automotive Bootstrap supply voltage (max) (V) 1414 Rise time (ns) 55 Fall time (ns) 55 Undervoltage lockout (typ) (V) Programmable
SSOP (DFC) 32 106.09 mm² 10.3 x 10.3
  • Dual-output driver with real time variable drive strength
    • ±15A and ±5A drive current outputs
    • Digital input pins (GD*) for drive strength adjustment without SPI
    • 3 resistor settings R1, R2, or R1||R2
    • Integrated 4A active Miller clamp or optional external drive for Miller clamp transistor
  • Primary-side and secondary-side active short circuit (ASC) support
  • Under-voltage and over-voltage protection on internal and external supplies
  • Driver die temperature sensing and over temperature protection
  • Short-circuit protection:
    • 110ns response time to DESAT event
    • DESAT protection – selections up to 14V
    • Shunt resistor based short-circuit (SC) and over-current (OC) protection
    • Configurable protection threshold values and blanking times
    • Programmable soft turn-off (STO) and two-level soft turn-off (2STO) current
  • Integrated 10-bit ADC
    • Able to measure power switch temperature, DC Link voltage, driver die temperature, DESAT pin voltage, VCC2 voltage
    • Programmable digital comparators
  • Advanced VCE/VDS clamping circuit
  • Functional Safety-Compliant
  • Integrated diagnostics:
    • Built in self-test (BIST) for protection comparators
    • Gate threshold voltage measurement for power device health monitoring
    • INP to transistor gate path integrity
    • Internal clock monitoring
    • Fault alarm and warning outputs (nFLT*)
    • ISO communication data integrity check
  • SPI based device reconfiguration, verification, supervision, and diagnosis
  • 150V/ns CMTI
  • AEC-Q100 qualified with the following results:
    • Device temperature grade 1: -40°C to +125°C ambient operating temperature
    • Device HBM ESD classification level 2
    • Device CDM ESD classification level C2b
  • Dual-output driver with real time variable drive strength
    • ±15A and ±5A drive current outputs
    • Digital input pins (GD*) for drive strength adjustment without SPI
    • 3 resistor settings R1, R2, or R1||R2
    • Integrated 4A active Miller clamp or optional external drive for Miller clamp transistor
  • Primary-side and secondary-side active short circuit (ASC) support
  • Under-voltage and over-voltage protection on internal and external supplies
  • Driver die temperature sensing and over temperature protection
  • Short-circuit protection:
    • 110ns response time to DESAT event
    • DESAT protection – selections up to 14V
    • Shunt resistor based short-circuit (SC) and over-current (OC) protection
    • Configurable protection threshold values and blanking times
    • Programmable soft turn-off (STO) and two-level soft turn-off (2STO) current
  • Integrated 10-bit ADC
    • Able to measure power switch temperature, DC Link voltage, driver die temperature, DESAT pin voltage, VCC2 voltage
    • Programmable digital comparators
  • Advanced VCE/VDS clamping circuit
  • Functional Safety-Compliant
  • Integrated diagnostics:
    • Built in self-test (BIST) for protection comparators
    • Gate threshold voltage measurement for power device health monitoring
    • INP to transistor gate path integrity
    • Internal clock monitoring
    • Fault alarm and warning outputs (nFLT*)
    • ISO communication data integrity check
  • SPI based device reconfiguration, verification, supervision, and diagnosis
  • 150V/ns CMTI
  • AEC-Q100 qualified with the following results:
    • Device temperature grade 1: -40°C to +125°C ambient operating temperature
    • Device HBM ESD classification level 2
    • Device CDM ESD classification level C2b

The UCC5880-Q1 device is an isolated, highly configurable adjustable drive strength gate driver targeted to drive high power SiC MOSFETs and IGBTs in EV/HEV applications. Power transistor protections are included, such as shunt resistor based over-current, over-temperature (PTC, NTC, or diode), and DESAT detection, with selectable soft turn-off or two-level soft turn-off during these faults. An integrated 10-bit ADC enables monitoring of up to 2 analog inputs, VCC2, DESAT, and the gate driver temperature for enhanced system management. Diagnostics and detection functions are integrated to simplify the design of ASIL compliant systems. The parameters and thresholds for these features are configurable using the SPI, which allows the device to be used with nearly any SiC MOSFET or IGBT.

The UCC5880-Q1 device is an isolated, highly configurable adjustable drive strength gate driver targeted to drive high power SiC MOSFETs and IGBTs in EV/HEV applications. Power transistor protections are included, such as shunt resistor based over-current, over-temperature (PTC, NTC, or diode), and DESAT detection, with selectable soft turn-off or two-level soft turn-off during these faults. An integrated 10-bit ADC enables monitoring of up to 2 analog inputs, VCC2, DESAT, and the gate driver temperature for enhanced system management. Diagnostics and detection functions are integrated to simplify the design of ASIL compliant systems. The parameters and thresholds for these features are configurable using the SPI, which allows the device to be used with nearly any SiC MOSFET or IGBT.
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Technische Dokumentation

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Typ Titel Datum
* Data sheet UCC5880-Q1 Isolated 20A Adjustable Gate Drive IGBT/SiC MOSFET Gate Driver With Advanced Protection Features For Automotive Applications datasheet (Rev. A) PDF | HTML 26 Feb 2024
Technical article Three key components needed to boost performance of next generation EV traction inverters PDF | HTML 05 Jan 2024
Technical article How to maximize SiC traction inverter efficiency with real-time variable gate drive strength PDF | HTML 04 Jan 2024
White paper Simplifying Power Conversion in High-Voltage Systems PDF | HTML 09 Nov 2023
Certificate UCC5880INVERTEREVM EU RoHS Declaration of Conformity (DoC) 13 Mär 2023
White paper Design Priorities in EV Traction Inverter With Optimum Performance (Rev. A) PDF | HTML 08 Feb 2023
Technical article Improving safety in EV traction inverter systems PDF | HTML 08 Dez 2022
Certificate UCC5880QEVM-057 EU RoHS Declaration of Conformity (DoC) 11 Nov 2022
White paper Traction Inverters – A Driving Force Behind Vehicle Electrification PDF | HTML 08 Sep 2022
Technical article Reducing power loss and thermal dissipation in SiC traction inverters PDF | HTML 10 Jun 2022

Design und Entwicklung

Weitere Bedingungen oder erforderliche Ressourcen enthält gegebenenfalls die Detailseite, die Sie durch Klicken auf einen der unten stehenden Titel erreichen.

Evaluierungsplatine

UCC5880INVERTEREVM — UCC5880-Q1 Evaluierungsmodul für variable isolierte Gate-Ansteuerung in Traktionswechselrichtern<

Die Platine UCC5880INVERTEREVM kann als eigenständige Platine verwendet werden, um den UCC5880-Q1-Treiber mit einer 100-nF-Kondensatorlast zu testen, die auf der Platine aufgelötet ist. Sie kann auch verwendet werden, um Wolfspeed XM3 SiC-basierte Halbbrücken-Leistungsmodule direkt für (...)

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Evaluierungsplatine

UCC5880QEVM-057 — Evaluierungsmodul UCC5880-Q1

Das Evaluierungsmodul UCC5880-Q1 ist zur Evaluierung des isolierten Einkanal-Gate-Treibers UCC5880-Q1 mit 20 A, einstellbarer Gate-Treiberstärke und erweiterten Schutzfunktionen konzipiert. Dieser Gate-Treiber ist zum Antrieb von Hochleistungs-SiC-MOSFETs und IGBTs in Elektrofahrzeug- und (...)
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Simulationstool

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PSpice® für TI ist eine Design- und Simulationsumgebung, welche Sie dabei unterstützt, die Funktionalität analoger Schaltungen zu evaluieren. Diese voll ausgestattete Design- und Simulationssuite verwendet eine analoge Analyse-Engine von Cadence®. PSpice für TI ist kostenlos erhältlich und (...)
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Referenzdesigns

TIDM-02014 — Referenzdesign für hochleistungsfähigen SiC-Traktionsinverter für die Automobilindustrie

Das TIDM-02014 ist ein 800-V-, 300-kW-SiC-basiertes Referenzdesign für Traktionsinverter, das von Texas Instruments und Wolfspeed entwickelt wurde. Es bietet eine Grundlage für OEMs und Entwicklungsingenieure, um leistungsstarke, hocheffiziente Traktionsinvertersysteme zu entwickeln und (...)
Design guide: PDF
Referenzdesigns

PMP31236 — Gate driver reference design for HybridPACK™ Drive IGBT modules

This reference uses six UCC5880-Q1 gate-drive ICs and six LM5180-Q1 isolated bias supplies to interface with and drive Infineon HybridPACK™ insulated-gate bipolar transistor (IGBT) modules. The isolated output voltage is +15 V and −8 V with 100-mA maximum output current each. The input voltage (...)
Test report: PDF
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Bestellen & Qualität

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  • Materialinhalt
  • Qualifikationszusammenfassung
  • Kontinuierliches Zuverlässigkeitsmonitoring
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