UCC5881-Q1

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Isolierter 20-A-IGBT/SiC-MOSFET-Echtzeit-Gate-Treiber mit variabler Stärke für die Automobilindustri

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Datenblatt

document-pdfAcrobat UCC5881-Q1 Isolated 20A Adjustable Gate Drive IGBT/SiC MOSFET Gate Driver With Advanced Protection Features For Automotive Applications datasheet (Englisch) PDF | HTML

UCC5881-Q1

AKTIV

Datenblatt

Jetzt bestellen

Produktdetails

Number of channels

1

Isolation rating

Reinforced

Power switch

IGBT, SiCFET

Withstand isolation voltage (VISO) (Vrms)

5000

Working isolation voltage (VIOWM) (Vrms)

1000

Transient isolation voltage (VIOTM) (VPK)

7071

Peak output current (A)

20

Peak output current (source) (typ) (A)

20

Peak output current (sink) (typ) (A)

20

Features

Active miller clamp, Disable, Enable, Fault reporting, High CMTI, Power good, Programmable dead time, Real-time variable gate drive strength, Short circuit protection, Soft turn-off, Two-level turn-off

Output VCC/VDD (min) (V)

12

Output VCC/VDD (max) (V)

30

Input supply voltage (min) (V)

3

Input supply voltage (max) (V)

5.5

Propagation delay time (µs)

0.15

Input threshold

CMOS

Operating temperature range (°C)

-40 to 125

Rating

Automotive

Rise time (ns)

55

Fall time (ns)

55

Undervoltage lockout (typ) (V)

Programmable

TI functional safety category

Functional Safety-Compliant

Number of channels

1

Isolation rating

Reinforced

Power switch

IGBT, SiCFET

Withstand isolation voltage (VISO) (Vrms)

5000

Working isolation voltage (VIOWM) (Vrms)

1000

Transient isolation voltage (VIOTM) (VPK)

7071

Peak output current (A)

20

Peak output current (source) (typ) (A)

20

Peak output current (sink) (typ) (A)

20

Features

Active miller clamp, Disable, Enable, Fault reporting, High CMTI, Power good, Programmable dead time, Real-time variable gate drive strength, Short circuit protection, Soft turn-off, Two-level turn-off

Output VCC/VDD (min) (V)

12

Output VCC/VDD (max) (V)

30

Input supply voltage (min) (V)

3

Input supply voltage (max) (V)

5.5

Propagation delay time (µs)

0.15

Input threshold

CMOS

Operating temperature range (°C)

-40 to 125

Rating

Automotive

Rise time (ns)

55

Fall time (ns)

55

Undervoltage lockout (typ) (V)

Programmable

TI functional safety category

Functional Safety-Compliant

SSOP (DFC)

32

106.09 mm² (10.3 mm × 10.3 mm)

Dual-output driver with real time variable drive strength
- ±15A and ±5A drive current outputs
- Digital input pins (GD*) for drive strength adjustment without SPI
- 3 resistor settings R1, R2, or R1||R2
- Integrated 4A active Miller clamp or optional external drive for Miller clamp transistor
Primary-side and secondary-side active short circuit (ASC) support
Under-voltage and over-voltage protection on internal and external supplies
Driver die temperature sensing and over temperature protection
Short-circuit protection:
- 110ns response time to DESAT event
- DESAT protection – selections up to 14V
- Shunt resistor based short-circuit (SC) and over-current (OC) protection
- Configurable protection threshold values and blanking times
- Programmable soft turn-off (STO) and two-level soft turn-off (2STO) current
Integrated 10-bit ADC
- Able to measure power switch temperature, DC Link voltage, driver die temperature, DESAT pin voltage, VCC2 voltage
- Programmable digital comparators
Advanced VCE/VDS clamping circuit
Functional Safety-Compliant
- Developed for functional safety applications
- Documentation available to aid ISO 26262 system design up to ASIL D
Integrated diagnostics:
- Built in self-test (BIST) for protection comparators
- Gate threshold voltage measurement for power device health monitoring
- INP to transistor gate path integrity
- Internal clock monitoring
- Fault alarm and warning outputs (nFLT*)
- ISO communication data integrity check
SPI based device reconfiguration, verification, supervision, and diagnosis
150V/ns CMTI
AEC-Q100 qualified with the following results:
- Device temperature grade 1: -40°C to +125°C ambient operating temperature
- Device HBM ESD classification level 2
- Device CDM ESD classification level C2b

Dual-output driver with real time variable drive strength
- ±15A and ±5A drive current outputs
- Digital input pins (GD*) for drive strength adjustment without SPI
- 3 resistor settings R1, R2, or R1||R2
- Integrated 4A active Miller clamp or optional external drive for Miller clamp transistor
Primary-side and secondary-side active short circuit (ASC) support
Under-voltage and over-voltage protection on internal and external supplies
Driver die temperature sensing and over temperature protection
Short-circuit protection:
- 110ns response time to DESAT event
- DESAT protection – selections up to 14V
- Shunt resistor based short-circuit (SC) and over-current (OC) protection
- Configurable protection threshold values and blanking times
- Programmable soft turn-off (STO) and two-level soft turn-off (2STO) current
Integrated 10-bit ADC
- Able to measure power switch temperature, DC Link voltage, driver die temperature, DESAT pin voltage, VCC2 voltage
- Programmable digital comparators
Advanced VCE/VDS clamping circuit
Functional Safety-Compliant
- Developed for functional safety applications
- Documentation available to aid ISO 26262 system design up to ASIL D
Integrated diagnostics:
- Built in self-test (BIST) for protection comparators
- Gate threshold voltage measurement for power device health monitoring
- INP to transistor gate path integrity
- Internal clock monitoring
- Fault alarm and warning outputs (nFLT*)
- ISO communication data integrity check
SPI based device reconfiguration, verification, supervision, and diagnosis
150V/ns CMTI
AEC-Q100 qualified with the following results:
- Device temperature grade 1: -40°C to +125°C ambient operating temperature
- Device HBM ESD classification level 2
- Device CDM ESD classification level C2b

The UCC5881-Q1 device is an isolated, highly configurable adjustable drive strength gate driver targeted to drive high power SiC MOSFETs and IGBTs in EV/HEV applications. Power transistor protections are included, such as shunt resistor based over-current, over-temperature (PTC, NTC, or diode), and DESAT detection, with selectable soft turn-off or two-level soft turn-off during these faults. An integrated 10-bit ADC enables monitoring of up to 2 analog inputs, VCC2, DESAT, and the gate driver temperature for enhanced system management. Diagnostics and detection functions are integrated to simplify the design of ASIL compliant systems. The parameters and thresholds for these features are configurable using the SPI, which allows the device to be used with nearly any SiC MOSFET or IGBT.

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Technische Dokumentation

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Design und Entwicklung

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Evaluierungsplatine

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