計算工具
LMGXX-GAN-LLC-CALC — GaN LLC resonant converter device loss calculator
Device Loss Calculator can be used to evaluate different devices for different topologies of the LLC Resonant Converter
LMG2640
- 650V GaN power-FET half bridge
- 105mΩ low-side and high-side GaN FETs
- Integrated gate drivers with low propagation delays
- Current-sense emulation with high-bandwidth and high accuracy
- Low-side / high-side gate-drive interlock
- High-side gate-drive signal level shifter
- Smart-switched bootstrap diode function
- High-side start up : < 8µs
- Low-side / high-side cycle-by-cycle over-current protection
- Over-temperature protection with FLT pin reporting
- AUX idle quiescent current: 250µA
- AUX standby quiescent current: 50µA
- BST idle quiescent current: 65µA
- Maximum supply and input logic pin voltage: 26V
- 9×7mm QFN package with dual thermal pads
The LMG2640 is a 650V GaN power-FET half bridge intended for switch mode power supply applications. The LMG2640 simplifies design, reduces component count, and reduces board space by integrating half-bridge power FETs, gate drivers, bootstrap diode, and high-side gate-drive level shifter in a 9mm by 7mm QFN package.
The low-side current-sense emulation reduces power dissipation compared to the traditional current-sense resistor and allows the low-side thermal pad to be connected to the cooling PCB power ground.
The high-side gate-drive signal level shifter eliminates noise and burst-mode power dissipation problems found with external solutions. The smart-switched GaN bootstrap FET has no diode forward-voltage drop, avoids overcharging the high-side supply, and has zero reverse-recovery charge.
The LMG2640 supports converter light-load efficiency requirements and burst-mode operation with low quiescent currents and fast start-up times. Protection features include FET turn-on interlock, under-voltage lockout (UVLO), cycle-by-cycle current limit, and over-temperature shut down.
技術文件
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檢視所有 1 | 重要文件 | 類型 | 標題 | 格式選項 | 日期 |
|---|---|---|---|---|
| * | Data sheet | LMG2640 Integrated 650V GaN Half Bridge datasheet | PDF | HTML | 2024年 11月 4日 |
設計與開發
如需其他條款或必要資源，請按一下下方的任何標題以檢視詳細頁面 (如有)。
子卡
LMG2640EVM-090 — LMG2640 子卡
LMG2640 子卡評估模組 (EVM) 專為提供快速簡單的平台所設計，可評估任何半橋拓撲結構中的 TI 整合式 GaN 裝置。此電路板的設計用途，在於使用電路板底部邊緣的六個電源針腳和 10 個數位針腳，來與大型系統介接。電源針腳構成主要切換迴路，包括高電壓 DC 匯流排、開關節點和電源接地。數位針腳使用 PWM 閘極輸入控制 LMG2640 裝置，以低電壓供應提供輔助電源，並以數位輸出方式回報故障狀況。使用 TI 的同步降壓/升壓主機板 (LMG342X-BB-EVM)，讓您以最輕鬆的方式示範評估 LMG2640EVM (...)
| 封裝 | 針腳 | CAD 符號、佔位空間與 3D 模型 |
|---|---|---|
| VQFN (RRG) | 40 | Ultra Librarian |
訂購與品質
內含資訊：
- RoHS
- REACH
- 產品標記
- 鉛塗層/球物料
- MSL 等級/回焊峰值
- MTBF/FIT 估算值
- 材料內容
- 認證摘要
- 進行中的可靠性監測
內含資訊：
- 晶圓廠位置
- 組裝地點
建議產品可能具有與此 TI 產品相關的參數、評估模組或參考設計。