計算工具
LMGXX-GAN-LLC-CALC — GaN LLC resonant converter device loss calculator
Device Loss Calculator can be used to evaluate different devices for different topologies of the LLC Resonant Converter
LMG2650
- GaN power-FET half bridge: 650V
- Low-side and high-side GaN FETs: 95mΩ
- Integrated gate drivers with low propagation delays: < 100ns
- Programmable turn-on slew rate control
- Current-sense emulation with high-bandwidth and high accuracy
- Low-side referenced (INH) and high-side referenced (GDH) high-side gate drive pins
- Low-side (INL) and high-side (INH) gate-drive interlock
- High-side (INH) gate-drive signal level shifter
- Smart-switched bootstrap diode function
- High-side start up: <8µs
- Low-side and high-side cycle-by-cycle overcurrent protection
- Overtemperature protection
- AUX idle quiescent current: 250µA
- AUX standby quiescent current: 50µA
- BST idle quiescent current: 70µA
- 6mm × 8mm QFN package with dual thermal pads
The LMG2650 is a 650V 95mΩ GaN power-FET half bridge. The LMG2650 simplifies design, reduces component count, and reduces board space by integrating half-bridge power FETs, gate drivers, bootstrap FET, and high-side gate-drive level shifter in a 6mm × 8mm QFN package.
Programmable turn-on slew rates provide EMI and ringing control. The low-side current-sense emulation reduces power dissipation compared to the traditional current-sense resistor and allows the low-side thermal pad to connect to PCB power ground.
Control the high-side GaN power FET with either the low-side referenced gate-drive pin (INH) or the high-side referenced gate-drive pin (GDH). The high-side gate-drive signal level shifter reliably transmits the INH pin signal to the high-side gate driver in challenging power switching environments. The smart-switched GaN bootstrap FET has no diode forward-voltage drop, avoids overcharging the high-side supply, and has zero reverse-recovery charge.
The LMG2650 supports converter light-load efficiency requirements and burst-mode operation with low quiescent currents and fast start-up times. Protection features include FET turn-on interlock, under-voltage lockout (UVLO), cycle-by-cycle current limit, and over-temperature shut down. Ultra low slew rate setting supports motor drive applications.
技術文件
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檢視所有 1 | 重要文件 | 類型 | 標題 | 格式選項 | 日期 |
|---|---|---|---|---|
| * | Data sheet | LMG2650 650V 95 mΩ GaN Half Bridge With Integrated Driver and Current Sense Emulation datasheet (Rev. B) | PDF | HTML | 2026年 2月 26日 |
設計與開發
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子卡
LMG2650EVM-100 — LMG2650 半橋子卡評估模組
LMG2650EVM-100 專為提供快速簡單的平台所設計，可評估任何半橋拓撲結構中的 TI 整合式 GaN 裝置。此電路板的設計用途，在於使用電路板底部邊緣的 6 個電源針腳和 12 個數位針腳，採用插座式外部連接方式來與大型系統介接。電源針腳構成主要切換迴路，包括高電壓 DC 匯流排、開關節點和電源接地。數位針腳使用 PWM 閘極輸入控制 LMG2650 裝置，以低電壓供應提供輔助電源，並以數位輸出方式回報故障狀況。使用 TI 的同步降壓/升壓主機板 (LMG342X-BB-EVM)，讓您以最輕鬆的方式示範評估 LMG2650EVM-100 (...)
參考設計
PMP41140 — 280W digital asymmetrical half bridge (AHB) DC-DC converter reference design
This document provides the test report for a digitally controlled asymmetrical half-bridge (AHB) converter, a flyback-derived resonant topology designed for high- efficiency and wide-output power conversion. The control algorithm implements zero-voltage switching (ZVS) control using a fast (...)
Test report: PDF
參考設計
TIDA-010282 — 1.3kW GaN 圖騰柱功率因數校正和馬達逆變器參考設計
此參考設計為一款 1.3kW 圖騰柱功率因數校正 (PFC) 結合馬達逆變器的解決方案，適用於大型家電及同類產品。本設計展示了一種實現數位圖騰柱 PFC 與三相永磁同步馬達 (PMSM) 無感測向量控制的方法，僅需單個 C2000™ 微控制器即可滿足高效率與低高度設計需求。此參考設計提供的軟硬體皆經過測試且隨時可用，有助於加快開發上市時間。
Design guide: PDF
| 封裝 | 針腳 | CAD 符號、佔位空間與 3D 模型 |
|---|---|---|
| VQFN (RFB) | 19 | Ultra Librarian |
訂購與品質
內含資訊：
- RoHS
- REACH
- 產品標記
- 鉛塗層/球物料
- MSL 等級/回焊峰值
- MTBF/FIT 估算值
- 材料內容
- 認證摘要
- 進行中的可靠性監測
內含資訊：
- 晶圓廠位置
- 組裝地點
建議產品可能具有與此 TI 產品相關的參數、評估模組或參考設計。