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UCC21551

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Reinforced, 4A/6A dual-channel isolated gate driver w/ enable, programable dead time

Product details

Number of channels 2 Power switch IGBT, MOSFET, SiCFET Withstand isolation voltage (VISO) (Vrms) 5000 Working isolation voltage (VIOWM) (Vrms) 1500 Peak output current (A) 6 Peak output current (source) (typ) (A) 4 Peak output current (sink) (typ) (A) 6 Features Programmable dead time Output VCC/VDD (min) (V) 13 Output VCC/VDD (max) (V) 25 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 5.5 Propagation delay time (µs) 0.028 Input threshold CMOS Operating temperature range (°C) -40 to 150 Rating Catalog Rise time (ns) 8 Fall time (ns) 8 Undervoltage lockout (typ) (V) 5, 8, 12, 17 TI functional safety category Functional Safety-Capable
Number of channels 2 Power switch IGBT, MOSFET, SiCFET Withstand isolation voltage (VISO) (Vrms) 5000 Working isolation voltage (VIOWM) (Vrms) 1500 Peak output current (A) 6 Peak output current (source) (typ) (A) 4 Peak output current (sink) (typ) (A) 6 Features Programmable dead time Output VCC/VDD (min) (V) 13 Output VCC/VDD (max) (V) 25 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 5.5 Propagation delay time (µs) 0.028 Input threshold CMOS Operating temperature range (°C) -40 to 150 Rating Catalog Rise time (ns) 8 Fall time (ns) 8 Undervoltage lockout (typ) (V) 5, 8, 12, 17 TI functional safety category Functional Safety-Capable
SOIC (DWK) 14 106.09 mm² (10.3 mm × 10.3 mm) SOIC (DW) 16 106.09 mm² (10.3 mm × 10.3 mm)
  • Universal: dual low-side, dual high-side or half-bridge driver
  • Junction temperature range –40 to +150°C
  • Up to 4A peak source and 6A peak sink output
  • Common-mode transient immunity (CMTI) greater than 125V/ns
  • Up to 25V VDD output drive supply
    • 5V,8V, 12V and 17V VDD UVLO options
  • Switching parameters:
    • 33ns typical propagation delay
    • 5ns maximum pulse-width distortion
    • 10µs maximum VDD power-up delay
  • UVLO protection for all power supplies
  • Fast enable for power sequencing
  • Universal: dual low-side, dual high-side or half-bridge driver
  • Junction temperature range –40 to +150°C
  • Up to 4A peak source and 6A peak sink output
  • Common-mode transient immunity (CMTI) greater than 125V/ns
  • Up to 25V VDD output drive supply
    • 5V,8V, 12V and 17V VDD UVLO options
  • Switching parameters:
    • 33ns typical propagation delay
    • 5ns maximum pulse-width distortion
    • 10µs maximum VDD power-up delay
  • UVLO protection for all power supplies
  • Fast enable for power sequencing

The UCC21551x is an isolated dual channel gate driver family with programmable dead time and wide temperature range. It is designed with 4A peak-source and 6A peak-sink current to drive power MOSFET, SiC, and IGBT transistors.

The UCC21551x can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver. The input side is isolated from the two output drivers by a 5kVRMS isolation barrier, with a minimum of 125V/ns common-mode transient immunity (CMTI).

Protection features include: resistor programmable dead time, disable feature to shut down both outputs simultaneously, and integrated de-glitch filter that rejects input transients shorter than 5ns. All supplies have UVLO protection.

With all these advanced features, the UCC21551x device enables high efficiency, high power density, and robustness in a wide variety of power applications.

The UCC21551x is an isolated dual channel gate driver family with programmable dead time and wide temperature range. It is designed with 4A peak-source and 6A peak-sink current to drive power MOSFET, SiC, and IGBT transistors.

The UCC21551x can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver. The input side is isolated from the two output drivers by a 5kVRMS isolation barrier, with a minimum of 125V/ns common-mode transient immunity (CMTI).

Protection features include: resistor programmable dead time, disable feature to shut down both outputs simultaneously, and integrated de-glitch filter that rejects input transients shorter than 5ns. All supplies have UVLO protection.

With all these advanced features, the UCC21551x device enables high efficiency, high power density, and robustness in a wide variety of power applications.

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Technical documentation

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Top documentation Type Title Format options Date
* Data sheet UCC21551x 4A, 6A, Reinforced Isolation Dual-Channel Gate Driver datasheet (Rev. D) PDF | HTML Jun 26, 2024
Certificate VDE Certificate for Reinforced Isolation for DIN EN IEC 60747-17 (Rev. AB) Jul 15, 2026
Certificate FPPT2 - Nonoptical Isolating Devices UL 1577 Certificate of Compliance. May 19, 2025
Certificate CQC Certificate for UCC21551xx Aug 27, 2024
Application note Review of Different Power Factor Correction (PFC) Topologies' Gate Driver Needs PDF | HTML Jan 22, 2024
Certificate UCC21551CQEVM-079 EU RoHS Declaration of Conformity (DoC) Apr 6, 2023

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Evaluation board

UCC21551CQEVM-079 — UCC21551 evaluation module for 4-A, 6-A dual-channel isolated gate driver

The UCC21551CQEVM has a two-layer copper PCB containing multiple test points and jumpers in order to fully evaluate the functionality of the UCC21551. The EVM features PWM input control, onboard adjustable power supply, sockets for discrete FETs, external active clamp for low-side protection, (...)

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SOIC (DWK) 14 Ultra Librarian
SOIC (DW) 16 Ultra Librarian

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