LMG3410R150
GaN de 600 V y 150 mΩ con controlador y protección contra sobretensiones integrados
LMG3410R150
- TI GaN process qualified through accelerated reliability in-application hard-switching profiles
- Enables high-density power conversion designs
- Superior system performance over cascode or stand-alone GaN FETs
- Low inductance 8 mm × 8 mm QFN package for ease of design and layout
- Adjustable drive strength for switching performance and EMI control
- Digital fault status output signal
- Only +12 V of unregulated supply needed
- Integrated gate driver
- Zero common source inductance
- 20-ns propagation delay for high-frequency design
- Trimmed gate bias voltage to compensate for threshold variations ensures reliable switching
- 25-V/ns to 100-V/ns adjustable slew rate
- Robust protection
- Requires no external protection components
- Overcurrent protection with <100 ns response
- Greater than 150-V/ns slew rate immunity
- Transient overvoltage immunity
- Overtemperature protection
- Undervoltage lockout (UVLO) protection on all supply rails
- Device Options:
- LMG3410R150: Latched overcurrent protection
- LMG3411R150: Cycle-by-cycle overcurrent proection
The LMG341xR150 GaN FET with integrated driver and protection enables designers to achieve new levels of power density and efficiency in power electronics systems. The inherent advantages of this device over silicon MOSFETs include ultra-low input and output capacitance, zero reverse recovery to reduce switching losses by as much as 80%, and low switch node ringing to reduce EMI. These advantages enable dense and efficient topologies like the totem-pole PFC.
The LMG341xR150 provides a smart alternative to traditional cascode GaN and standalone GaN FETs by integrating a unique set of features to simplify design, maximize reliability and optimize the performance of any power supply. Integrated gate drive enables 100 V/ns switching with near zero VDS ringing, less than 100-ns current limiting response self-protects against unintended shoot-through events, Overtemperature shutdown prevents thermal runaway, and system interface signals provide self-monitoring capability.
Productos similares que pueden interesarle
Pin por pin con la misma funcionalidad que el dispositivo comparado
Documentación técnica
Tipo | Título | Fecha | ||
---|---|---|---|---|
* | Data sheet | LMG341xR150 600-V, 150-mΩ, GaN FET with Integrated Driver and Protection datasheet (Rev. B) | PDF | HTML | 13 feb 2020 |
White paper | Achieving GaN Products With Lifetime Reliability | PDF | HTML | 02 jun 2021 | |
White paper | Achieve Power-Dense and Efficient Digital Power Systems by Combining TI GaN FETs | 05 ene 2021 | ||
More literature | A Generalized Approach to Determine the Switching Lifetime of a GaN FET | 20 oct 2020 | ||
Analog Design Journal | Wide-bandgap semiconductors: Performance and benefits of GaN versus SiC | 22 sep 2020 | ||
Application note | Thermal Considerations for Designing a GaN Power Stage (Rev. B) | 04 ago 2020 | ||
EVM User's guide | LMG3410R150-031 EVM User Guide | 02 abr 2019 |
Diseño y desarrollo
Para conocer los términos adicionales o los recursos necesarios, haga clic en cualquier título de abajo para ver la página de detalles cuando esté disponible.
LMG34XX-BB-EVM — Placa base de evaluación a nivel de sistema LMG34xx GaN para la familia LMG341x
The LMG34XX-BB-EVM is an easy to use breakout board to configure any LMG341x half bridge board, such as the LMG3410-HB-EVM, as a synchronous buck converter. By providing a power stage, bias power and logic circuitry this EVM allows for quick measurements of the GaN device switching. This EVM is (...)
LMG3410EVM-031 — Tarjeta secundaria LMG3410R150 de medio puente GaN de 600 V y 150 mΩ
LMG3410R150 Unencrypted PSPICE Trans Model Package (Rev. A)
SNOR029 — GaN CCM Boost PFC Power Loss Calculation Excel Sheet
Productos y hardware compatibles
Productos
Etapas de potencia de nitruro de galio (GaN)
SNOR030 — GaN CCM Totem Pole PFC Power Loss Calculation Excel Sheet
Productos y hardware compatibles
Productos
Etapas de potencia de nitruro de galio (GaN)
Encapsulado | Pines | Símbolos CAD, huellas y modelos 3D |
---|---|---|
VQFN (RWH) | 32 | Ultra Librarian |
Pedidos y calidad
- RoHS
- REACH
- Marcado del dispositivo
- Acabado de plomo/material de la bola
- Clasificación de nivel de sensibilidad a la humedad (MSL) / reflujo máximo
- Estimaciones de tiempo medio entre fallas (MTBF)/fallas en el tiempo (FIT)
- Contenido del material
- Resumen de calificaciones
- Monitoreo continuo de confiabilidad
- Lugar de fabricación
- Lugar de ensamblaje
Soporte y capacitación
Foros de TI E2E™ con asistencia técnica de los ingenieros de TI
El contenido lo proporcionan “tal como está” TI y los colaboradores de la comunidad y no constituye especificaciones de TI. Consulte los términos de uso.
Si tiene preguntas sobre la calidad, el paquete o el pedido de productos de TI, consulte el soporte de TI.