홈 RF 및 마이크로파 RF 증폭기 RF FDA(완전 차동 증폭기)
홈
RF 및 마이크로파
RF 증폭기
RF FDA(완전 차동 증폭기)
신규

TRF0213-SEP

활성

방사능 저항, DC에 가까운 주파수부터 14GHz 초과 주파수까지 지원, S2D(단일 종단→차동) RF 증폭기

지금 주문
데이터 시트

TRF0213-SEP

활성
데이터 시트 지금 주문

제품 상세 정보

Type RF FDA Frequency (min) (MHz) 0.01 Frequency (max) (MHz) 14000 Gain (typ) (dB) 13.8 Noise figure (typ) (dB) 8.9 OIP3 (typ) (dBm) 31 P1dB (typ) (dBm) 13.4 Frequency of harmonic distortion measurement (GHz) 4 3rd harmonic (dBc) -55 OIP2 (typ) (dBm) 53 2nd harmonic (dBc) -53 Supply voltage (V) 5 Current consumption (mA) 174 Number of channels 1 Operating temperature range (°C) -55 to 125 Rating Catalog, Space Output enable Yes Radiation, SEL (MeV·cm2/mg) 43 Radiation, TID (typ) (rad) 30000
Type RF FDA Frequency (min) (MHz) 0.01 Frequency (max) (MHz) 14000 Gain (typ) (dB) 13.8 Noise figure (typ) (dB) 8.9 OIP3 (typ) (dBm) 31 P1dB (typ) (dBm) 13.4 Frequency of harmonic distortion measurement (GHz) 4 3rd harmonic (dBc) -55 OIP2 (typ) (dBm) 53 2nd harmonic (dBc) -53 Supply voltage (V) 5 Current consumption (mA) 174 Number of channels 1 Operating temperature range (°C) -55 to 125 Rating Catalog, Space Output enable Yes Radiation, SEL (MeV·cm2/mg) 43 Radiation, TID (typ) (rad) 30000
WQFN-FCRLF (RPV) 12 4 mm² 2 x 2
  • Vendor item drawing number: VID V62/25656
  • Radiation:
    • Total ionizing dose (TID)
      • Radiation hardness assurance (RHA) up to 30krad (Si) TID
      • Enhanced low dose rate sensitivity (ELDRS) free process
      • High dose rate radiation lot acceptance testing (HDR RLAT) up to 30krad (Si) TID
    • Single event effects (SEE)
      • Single event latch-up (SEL) immune to linear energy transfer (LET) of 43MeV‑cm2/mg
      • Single event transient (SET) characterized to LET of 43MeV‑cm2/mg
  • Space-enhanced plastic (Space EP, SEP)
    • Lead-free construction
    • Extended temperature range: –55°C to +125°C
  • Single-ended input, differential output
  • Excellent performance driving RF ADCs
  • Fixed 14dB gain
  • Bandwidth (3dB): >14GHz
  • Gain flatness (1dB): 12GHz
  • OIP3: 31dBm (4GHz), 31dBm (10GHz)
  • OP1dB: 13.4dBm (4GHz), 15.4dBm (10GHz)
  • NF: 8.9dB (4GHz), 10.6dB (10GHz)
  • Gain and phase imbalance: ±0.3dB and ±3º
  • Power-down feature
  • 5V single-supply operation
  • Active current: 174mA
  • Vendor item drawing number: VID V62/25656
  • Radiation:
    • Total ionizing dose (TID)
      • Radiation hardness assurance (RHA) up to 30krad (Si) TID
      • Enhanced low dose rate sensitivity (ELDRS) free process
      • High dose rate radiation lot acceptance testing (HDR RLAT) up to 30krad (Si) TID
    • Single event effects (SEE)
      • Single event latch-up (SEL) immune to linear energy transfer (LET) of 43MeV‑cm2/mg
      • Single event transient (SET) characterized to LET of 43MeV‑cm2/mg
  • Space-enhanced plastic (Space EP, SEP)
    • Lead-free construction
    • Extended temperature range: –55°C to +125°C
  • Single-ended input, differential output
  • Excellent performance driving RF ADCs
  • Fixed 14dB gain
  • Bandwidth (3dB): >14GHz
  • Gain flatness (1dB): 12GHz
  • OIP3: 31dBm (4GHz), 31dBm (10GHz)
  • OP1dB: 13.4dBm (4GHz), 15.4dBm (10GHz)
  • NF: 8.9dB (4GHz), 10.6dB (10GHz)
  • Gain and phase imbalance: ±0.3dB and ±3º
  • Power-down feature
  • 5V single-supply operation
  • Active current: 174mA

The TRF0213-SEP is a very high performance, radio frequency (RF) amplifier optimized for RF applications. This device is excellent for ac-coupled applications that require a single-ended to differential conversion when driving an RF sampling analog-to-digital converter (ADC) such as the high performance AFE7950-SEP or ADC12DJ5200-SEP. The device combines the functionality of a wide-band gain block and a wide-band passive balun. The on-chip matching components simplify printed circuit board (PCB) implementation and provide the highest performance over the usable bandwidth. The device is fabricated in Texas Instruments’ advanced complementary BiCMOS process and is available in a space-saving, WQFN-FCRLF package.

The TRF0213-SEP operates on a single-rail supply and consumes about 174mA of active current. A power-down feature is also available for power savings.

The TRF0213-SEP is a very high performance, radio frequency (RF) amplifier optimized for RF applications. This device is excellent for ac-coupled applications that require a single-ended to differential conversion when driving an RF sampling analog-to-digital converter (ADC) such as the high performance AFE7950-SEP or ADC12DJ5200-SEP. The device combines the functionality of a wide-band gain block and a wide-band passive balun. The on-chip matching components simplify printed circuit board (PCB) implementation and provide the highest performance over the usable bandwidth. The device is fabricated in Texas Instruments’ advanced complementary BiCMOS process and is available in a space-saving, WQFN-FCRLF package.

The TRF0213-SEP operates on a single-rail supply and consumes about 174mA of active current. A power-down feature is also available for power savings.
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기술 자료

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4개 모두 보기
유형 직함 날짜
* Data sheet TRF0213-SEP Radiation Tolerant, Near-DC to > 14GHz, Single-Ended-to-Differential RF Amplifier datasheet PDF | HTML 2025/12/16
* Radiation & reliability report TRF0213-SEP Total Ionizing Dose (TID) Report 2026/01/08
* Radiation & reliability report TRF0213-SEP Production Flow and Reliability Report PDF | HTML 2025/10/08
* Radiation & reliability report TRF0213-SEP, Radiation-Tolerant, Near-DC to >14GHz, Single-Ended-to-Differential RF Amp Single-Event Effects PDF | HTML 2025/01/08

설계 및 개발

추가 조건 또는 필수 리소스는 사용 가능한 경우 아래 제목을 클릭하여 세부 정보 페이지를 확인하세요.

시뮬레이션 모델

TRF0213-SEP S-Parameter Model

SLVMET2.ZIP (8 KB) - S-Parameter Model
다운로드
패키지 핀 CAD 기호, 풋프린트 및 3D 모델
WQFN-FCRLF (RPV) 12 Ultra Librarian
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주문 및 품질

포함된 정보:
  • RoHS
  • REACH
  • 디바이스 마킹
  • 납 마감/볼 재질
  • MSL 등급/피크 리플로우
  • MTBF/FIT 예측
  • 물질 성분
  • 인증 요약
  • 지속적인 신뢰성 모니터링
포함된 정보:
  • 팹 위치
  • 조립 위치

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지원 및 교육

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포럼 주제 모두 보기(영문)

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