1.2-A/5-A, 90-V half bridge gate driver for GaNFET

LM5113 is not recommended for new designs
Although this product continues to be in production to support previous designs, we don't recommend it for new designs. Consider one of these alternates:
open-in-new Compare alternates
Drop-in replacement with upgraded functionality to the compared device
LM5113-Q1 ACTIVE Automotive 1.2-A/5-A, 100-V half bridge gate driver for GaNFET Automotive qualified

Product details

Bootstrap supply voltage (max) (V) 107 Power switch GaNFET, MOSFET Input supply voltage (min) (V) 4.5 Input supply voltage (max) (V) 5.5 Peak output current (A) 5 Operating temperature range (°C) -40 to 125 Undervoltage lockout (typ) (V) 4 Rating Catalog Propagation delay time (µs) 0.03 Rise time (ns) 7 Fall time (ns) 3.5 Iq (mA) 0.15 Input threshold TTL Channel input logic TTL Switch node voltage (V) -5 Features Bootstrap supply voltage clamp, Split outputs on high and low side Driver configuration Dual, Independent
Bootstrap supply voltage (max) (V) 107 Power switch GaNFET, MOSFET Input supply voltage (min) (V) 4.5 Input supply voltage (max) (V) 5.5 Peak output current (A) 5 Operating temperature range (°C) -40 to 125 Undervoltage lockout (typ) (V) 4 Rating Catalog Propagation delay time (µs) 0.03 Rise time (ns) 7 Fall time (ns) 3.5 Iq (mA) 0.15 Input threshold TTL Channel input logic TTL Switch node voltage (V) -5 Features Bootstrap supply voltage clamp, Split outputs on high and low side Driver configuration Dual, Independent
DSBGA (YFX) 12 3.24 mm² 1.8 x 1.8 WSON (DPR) 10 16 mm² 4 x 4
  • Independent high-side and low-side
    TTL logic inputs
  • 1.2 A / 5 A peak source/sink current
  • High-side floating bias voltage rail
    Operates up to 100 VDC
  • Internal bootstrap supply voltage clamping
  • Split outputs for adjustable
    turnon/turnoff strength
  • 0.6-Ω / 2.1-Ω pulldown/pullup resistance
  • Fast propagation times (28 ns typical)
  • Excellent propagation delay matching
    (1.5 ns typical)
  • Supply rail undervoltage lockout
  • Low power consumption
  • Independent high-side and low-side
    TTL logic inputs
  • 1.2 A / 5 A peak source/sink current
  • High-side floating bias voltage rail
    Operates up to 100 VDC
  • Internal bootstrap supply voltage clamping
  • Split outputs for adjustable
    turnon/turnoff strength
  • 0.6-Ω / 2.1-Ω pulldown/pullup resistance
  • Fast propagation times (28 ns typical)
  • Excellent propagation delay matching
    (1.5 ns typical)
  • Supply rail undervoltage lockout
  • Low power consumption

The LM5113 device is designed to drive both the high-side and the low-side enhancement mode Gallium Nitride (GaN) FETs in a synchronous buck or a half bridge configuration. The floating high-side driver is capable of driving a high-side enhancement mode GaN FET operating up to 100 V. The high-side bias voltage is generated using a bootstrap technique and is internally clamped at 5.2 V, which prevents the gate voltage from exceeding the maximum gate-source voltage rating of enhancement mode GaN FETs. The inputs of the LM5113 are TTL logic compatible, and can withstand input voltages up to 14 V regardless of the VDD voltage. The LM5113 has split gate outputs, providing flexibility to adjust the turnon and turnoff strength independently.

The LMG1205 is an enhancement over the LM5113. The LMG1205 takes the design of the LM5113 and includes start-up logic, level shifter, and power-off Vgs clamp enhancements to provide a more robust solution.

In addition, the strong sink capability of the LM5113 maintains the gate in the low state, preventing unintended turnon during switching. The LM5113 can operate up to several MHz. The LM5113 is available in a standard WSON-10 pin package and a 12-bump DSBGA package. The WSON-10 pin package contains an exposed pad to aid power dissipation. The DSBGA package offers a compact footprint and minimized package inductance.

The LM5113 device is designed to drive both the high-side and the low-side enhancement mode Gallium Nitride (GaN) FETs in a synchronous buck or a half bridge configuration. The floating high-side driver is capable of driving a high-side enhancement mode GaN FET operating up to 100 V. The high-side bias voltage is generated using a bootstrap technique and is internally clamped at 5.2 V, which prevents the gate voltage from exceeding the maximum gate-source voltage rating of enhancement mode GaN FETs. The inputs of the LM5113 are TTL logic compatible, and can withstand input voltages up to 14 V regardless of the VDD voltage. The LM5113 has split gate outputs, providing flexibility to adjust the turnon and turnoff strength independently.

The LMG1205 is an enhancement over the LM5113. The LMG1205 takes the design of the LM5113 and includes start-up logic, level shifter, and power-off Vgs clamp enhancements to provide a more robust solution.

In addition, the strong sink capability of the LM5113 maintains the gate in the low state, preventing unintended turnon during switching. The LM5113 can operate up to several MHz. The LM5113 is available in a standard WSON-10 pin package and a 12-bump DSBGA package. The WSON-10 pin package contains an exposed pad to aid power dissipation. The DSBGA package offers a compact footprint and minimized package inductance.

Download View video with transcript Video

Technical documentation

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Simulation model

LM5113 PSpice Transient Model (Rev. D)

SNVM043D.ZIP (43 KB) - PSpice Model
Simulation model

LM5113 TINA-TI Transient Reference Design (Rev. A)

SNVM460A.TSC (613 KB) - TINA-TI Reference Design
Simulation model

LM5113 TINA-TI Transient Spice Model (Rev. A)

SNVM459A.ZIP (16 KB) - TINA-TI Spice Model
Simulation model

LM5113 Unencrypted Spice Transient Model (Rev. B)

SNVJ002B.ZIP (2 KB) - PSpice Model
Simulation tool

PSPICE-FOR-TI — PSpice® for TI design and simulation tool

PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)
Reference designs

PMP4486 — 48Vin Digital POL with 3 Outputs Reference Design

The PMP4486 is a GaN-based reference design solution for telecom and computing applications. The GaN module LMG5200 enables a high efficiency single stage conversion with an input range from 36 to 60V down to 29V, 12V and 1.0V. This design shows the benefits of a GaN based design with high (...)
Test report: PDF
Schematic: PDF
Reference designs

PMP4435 — 48Vin, 300W 1/8brick Digital Module with GaN FET Reference Design

The PMP4435 is a DC-DC isolated digital module with GaN mosfet reference design targeted for industrial and telecom applications. The DC input range is 36V-60V, with 12V typical and the output is 12V/5A. An digital controller UCD3138A is used in the design. The efficiency is up to 95.8% with good (...)
Test report: PDF
Schematic: PDF
Package Pins Download
DSBGA (YFX) 12 View options
WSON (DPR) 10 View options

Ordering & quality

Information included:
  • RoHS
  • REACH
  • Device marking
  • Lead finish/Ball material
  • MSL rating/Peak reflow
  • MTBF/FIT estimates
  • Material content
  • Qualification summary
  • Ongoing reliability monitoring
Information included:
  • Fab location
  • Assembly location

Support & training

TI E2E™ forums with technical support from TI engineers

Content is provided "as is" by TI and community contributors and does not constitute TI specifications. See terms of use.

If you have questions about quality, packaging or ordering TI products, see TI support. ​​​​​​​​​​​​​​

Videos