LM5113 is not recommended for new designs.
This product continues to be in production to support existing customers. Please consider one of these alternatives:
Pin-for-pin with same functionality to the compared device.
LMG1205 ACTIVE 1.2-A, 5-A 90-V, half bridge gate driver with 5-V UVLO for GaNFET and MOSFET This product has the same functionality and pinout with improved start-up performance. Only available with DSBGA package

Product details

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  • Independent high-side and low-side
    TTL logic inputs
  • 1.2 A / 5 A peak source/sink current
  • High-side floating bias voltage rail
    Operates up to 100 VDC
  • Internal bootstrap supply voltage clamping
  • Split outputs for adjustable
    turnon/turnoff strength
  • 0.6-Ω / 2.1-Ω pulldown/pullup resistance
  • Fast propagation times (28 ns typical)
  • Excellent propagation delay matching
    (1.5 ns typical)
  • Supply rail undervoltage lockout
  • Low power consumption
  • Independent high-side and low-side
    TTL logic inputs
  • 1.2 A / 5 A peak source/sink current
  • High-side floating bias voltage rail
    Operates up to 100 VDC
  • Internal bootstrap supply voltage clamping
  • Split outputs for adjustable
    turnon/turnoff strength
  • 0.6-Ω / 2.1-Ω pulldown/pullup resistance
  • Fast propagation times (28 ns typical)
  • Excellent propagation delay matching
    (1.5 ns typical)
  • Supply rail undervoltage lockout
  • Low power consumption

The LM5113 device is designed to drive both the high-side and the low-side enhancement mode Gallium Nitride (GaN) FETs in a synchronous buck or a half bridge configuration. The floating high-side driver is capable of driving a high-side enhancement mode GaN FET operating up to 100 V. The high-side bias voltage is generated using a bootstrap technique and is internally clamped at 5.2 V, which prevents the gate voltage from exceeding the maximum gate-source voltage rating of enhancement mode GaN FETs. The inputs of the LM5113 are TTL logic compatible, and can withstand input voltages up to 14 V regardless of the VDD voltage. The LM5113 has split gate outputs, providing flexibility to adjust the turnon and turnoff strength independently.

The LMG1205 is an enhancement over the LM5113. The LMG1205 takes the design of the LM5113 and includes start-up logic, level shifter, and power-off Vgs clamp enhancements to provide a more robust solution.

In addition, the strong sink capability of the LM5113 maintains the gate in the low state, preventing unintended turnon during switching. The LM5113 can operate up to several MHz. The LM5113 is available in a standard WSON-10 pin package and a 12-bump DSBGA package. The WSON-10 pin package contains an exposed pad to aid power dissipation. The DSBGA package offers a compact footprint and minimized package inductance.

The LM5113 device is designed to drive both the high-side and the low-side enhancement mode Gallium Nitride (GaN) FETs in a synchronous buck or a half bridge configuration. The floating high-side driver is capable of driving a high-side enhancement mode GaN FET operating up to 100 V. The high-side bias voltage is generated using a bootstrap technique and is internally clamped at 5.2 V, which prevents the gate voltage from exceeding the maximum gate-source voltage rating of enhancement mode GaN FETs. The inputs of the LM5113 are TTL logic compatible, and can withstand input voltages up to 14 V regardless of the VDD voltage. The LM5113 has split gate outputs, providing flexibility to adjust the turnon and turnoff strength independently.

The LMG1205 is an enhancement over the LM5113. The LMG1205 takes the design of the LM5113 and includes start-up logic, level shifter, and power-off Vgs clamp enhancements to provide a more robust solution.

In addition, the strong sink capability of the LM5113 maintains the gate in the low state, preventing unintended turnon during switching. The LM5113 can operate up to several MHz. The LM5113 is available in a standard WSON-10 pin package and a 12-bump DSBGA package. The WSON-10 pin package contains an exposed pad to aid power dissipation. The DSBGA package offers a compact footprint and minimized package inductance.

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Technical documentation

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Type Title Date
* Data sheet LM5113 80-V, 1.2-A, 5-A, Half Bridge GaN Driver datasheet (Rev. I) PDF | HTML 28 Oct 2019
Application note Key Parameters and Driving Requirements of GaN FETs PDF | HTML 04 Aug 2022
Application note Nomenclature, Types, and Structure of GaN Transistors PDF | HTML 04 Aug 2022
Application note How GaN Enables More Efficient and Reduced Form Factor Power Supplies PDF | HTML 02 Aug 2022
Technical article How to achieve higher system robustness in DC drives, part 3: minimum input pulse 19 Sep 2018
Selection guide Power Management Guide 2018 (Rev. R) 25 Jun 2018
Technical article How to achieve higher system robustness in DC drives, part 2: interlock and deadtime 30 May 2018
Application note Design Considerations for LMG1205 Advanced GaN FET Driver During High-Frequency (Rev. A) 30 May 2018
Technical article Boosting efficiency for your solar inverter designs 24 May 2018
Technical article How to achieve higher system robustness in DC drives, part 1: negative voltage 17 Apr 2018
White paper A comprehensive methodology to qualify the reliability of GaN products 02 Mar 2015
White paper GaN power module performance advantage in DC/DC converters 02 Mar 2015
White paper Advancing Power Supply Solutions Through the Promise of GaN 24 Feb 2015
User guide AN-2149 LM5113 Evaluation Board (Rev. A) 03 May 2013
More literature LM5113 Prod Brief - 5A, 100V Half-Brdge Gate Drvr for Enhancement-Mode GaN FETs 17 Jun 2011

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Simulation model

LM5113 PSpice Transient Model (Rev. D)

SNVM043D.ZIP (43 KB) - PSpice Model
Simulation model

LM5113 TINA-TI Transient Reference Design (Rev. A)

SNVM460A.TSC (613 KB) - TINA-TI Reference Design
Simulation model

LM5113 TINA-TI Transient Spice Model (Rev. A)

SNVM459A.ZIP (16 KB) - TINA-TI Spice Model
Simulation model

LM5113 Unencrypted Spice Transient Model (Rev. B)

SNVJ002B.ZIP (2 KB) - PSpice Model
Simulation tool

PSPICE-FOR-TI — PSpice® for TI design and simulation tool

PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)
Reference designs

PMP4486 — 48Vin Digital POL with 3 Outputs Reference Design

The PMP4486 is a GaN-based reference design solution for telecom and computing applications. The GaN module LMG5200 enables a high efficiency single stage conversion with an input range from 36 to 60V down to 29V, 12V and 1.0V. This design shows the benefits of a GaN based design with high (...)
Test report: PDF
Schematic: PDF
Reference designs

PMP4435 — 48Vin, 300W 1/8brick Digital Module with GaN FET Reference Design

The PMP4435 is a DC-DC isolated digital module with GaN mosfet reference design targeted for industrial and telecom applications. The DC input range is 36V-60V, with 12V typical and the output is 12V/5A. An digital controller UCD3138A is used in the design. The efficiency is up to 95.8% with good (...)
Test report: PDF
Schematic: PDF
Package Pins Download
DSBGA (YFX) 12 View options
WSON (DPR) 10 View options

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