Home Energiemanagement Gate-Treiber Isolierte Gate-Treiber

ISO5852S

AKTIV

Einkanaliger isolierter Gate-Treiber, 5,7 kVrms, 2,5/5 A mit Split-Ausgang, STO und Schutzfunktionen

Produktdetails

Number of channels 1 Isolation rating Reinforced Power switch IGBT, MOSFET Withstand isolation voltage (VISO) (Vrms) 5700 Working isolation voltage (VIOWM) (Vrms) 1500 Transient isolation voltage (VIOTM) (VPK) 8000 Peak output current (A) 5 Peak output current (source) (typ) (A) 2.5 Peak output current (sink) (typ) (A) 5 Features Active miller clamp, Fault reporting, Power good, Short circuit protection, Soft turn-off, Split output Output VCC/VDD (min) (V) 15 Output VCC/VDD (max) (V) 30 Input supply voltage (min) (V) 2.25 Input supply voltage (max) (V) 5.5 Propagation delay time (µs) 0.076 Input threshold CMOS Operating temperature range (°C) -40 to 125 Rating Catalog Bootstrap supply voltage (max) (V) 2121 Rise time (ns) 18 Fall time (ns) 20 Undervoltage lockout (typ) (V) 12
Number of channels 1 Isolation rating Reinforced Power switch IGBT, MOSFET Withstand isolation voltage (VISO) (Vrms) 5700 Working isolation voltage (VIOWM) (Vrms) 1500 Transient isolation voltage (VIOTM) (VPK) 8000 Peak output current (A) 5 Peak output current (source) (typ) (A) 2.5 Peak output current (sink) (typ) (A) 5 Features Active miller clamp, Fault reporting, Power good, Short circuit protection, Soft turn-off, Split output Output VCC/VDD (min) (V) 15 Output VCC/VDD (max) (V) 30 Input supply voltage (min) (V) 2.25 Input supply voltage (max) (V) 5.5 Propagation delay time (µs) 0.076 Input threshold CMOS Operating temperature range (°C) -40 to 125 Rating Catalog Bootstrap supply voltage (max) (V) 2121 Rise time (ns) 18 Fall time (ns) 20 Undervoltage lockout (typ) (V) 12
SOIC (DW) 16 106.09 mm² (10.3 mm × 10.3 mm)
  • 100-kV/µs Minimum Common-Mode Transient Immunity (CMTI) at V CM = 1500 V
  • Split Outputs to Provide 2.5-A Peak Source and 5-A Peak Sink Currents
  • Short Propagation Delay: 76 ns (Typ), 110 ns (Max)
  • 2-A Active Miller Clamp
  • Output Short-Circuit Clamp
  • Soft Turn-Off (STO) during Short Circuit
  • Fault Alarm upon Desaturation Detection is Signaled on FLT and Reset Through RST
  • Input and Output Undervoltage Lockout (UVLO) with Ready (RDY) Pin Indication
  • Active Output Pulldown and Default Low Outputs with Low Supply or Floating Inputs
  • 2.25-V to 5.5-V Input Supply Voltage
  • 15-V to 30-V Output Driver Supply Voltage
  • CMOS Compatible Inputs
  • Rejects Input Pulses and Noise Transients Shorter Than 20 ns
  • Operating Temperature: –40°C to +125°C Ambient
  • Isolation Surge Withstand Voltage 12800-V PK
  • Safety-Related Certifications:
    • 8000-V PK V IOTM and 2121-V PK V IORM Reinforced Isolation per DIN V VDE V 0884-10 (VDE V 0884-10):2006-12
    • 5700-V RMS Isolation for 1 Minute per UL 1577
    • CSA Component Acceptance Notice 5A, IEC 60950–1 and IEC 60601–1 End Equipment Standards
    • TUV Certification per EN 61010-1 and EN 60950-1
    • GB4943.1-2011 CQC Certification
  • 100-kV/µs Minimum Common-Mode Transient Immunity (CMTI) at V CM = 1500 V
  • Split Outputs to Provide 2.5-A Peak Source and 5-A Peak Sink Currents
  • Short Propagation Delay: 76 ns (Typ), 110 ns (Max)
  • 2-A Active Miller Clamp
  • Output Short-Circuit Clamp
  • Soft Turn-Off (STO) during Short Circuit
  • Fault Alarm upon Desaturation Detection is Signaled on FLT and Reset Through RST
  • Input and Output Undervoltage Lockout (UVLO) with Ready (RDY) Pin Indication
  • Active Output Pulldown and Default Low Outputs with Low Supply or Floating Inputs
  • 2.25-V to 5.5-V Input Supply Voltage
  • 15-V to 30-V Output Driver Supply Voltage
  • CMOS Compatible Inputs
  • Rejects Input Pulses and Noise Transients Shorter Than 20 ns
  • Operating Temperature: –40°C to +125°C Ambient
  • Isolation Surge Withstand Voltage 12800-V PK
  • Safety-Related Certifications:
    • 8000-V PK V IOTM and 2121-V PK V IORM Reinforced Isolation per DIN V VDE V 0884-10 (VDE V 0884-10):2006-12
    • 5700-V RMS Isolation for 1 Minute per UL 1577
    • CSA Component Acceptance Notice 5A, IEC 60950–1 and IEC 60601–1 End Equipment Standards
    • TUV Certification per EN 61010-1 and EN 60950-1
    • GB4943.1-2011 CQC Certification

The ISO5852S device is a 5.7-kV RMS, reinforced isolated gate driver for IGBTs and MOSFETs with split outputs, OUTH and OUTL, providing 2.5-A source and 5-A sink current. The input side operates from a single 2.25-V to 5.5-V supply. The output side allows for a supply range from minimum 15 V to maximum 30 V. Two complementary CMOS inputs control the output state of the gate driver. The short propagation time of 76 ns provides accurate control of the output stage.

An internal desaturation (DESAT) fault detection recognizes when the IGBT is in an overcurrent condition. Upon a DESAT detect, a mute logic immediately blocks the output of the isolator and initiates a soft-turnoff procedure which disables the OUTH pin and pulls the OUTL pin to low over a time span of 2 µs. When the OUTL pin reaches 2 V with respect to the most-negative supply potential, V EE2, the gate-driver output is pulled hard to the V EE2 potential, turning the IGBT immediately off.

When desaturation is active, a fault signal is sent across the isolation barrier, pulling the FLT output at the input side low and blocking the isolator input. Mute logic is activated through the soft-turnoff period. The FLT output condition is latched and can be reset only after the RDY pin goes high, through a low-active pulse at the RST input.

When the IGBT is turned off during normal operation with a bipolar output supply, the output is hard clamp to V EE2. If the output supply is unipolar, an active Miller clamp can be used, allowing Miller current to sink across a low-impedance path which prevents the IGBT from dynamic turnon during high-voltage transient conditions.

The readiness for the gate driver to be operated is under the control of two undervoltage-lockout circuits monitoring the input-side and output-side supplies. If either side has insufficient supply, the RDY output goes low, otherwise this output is high.

The ISO5852S device is available in a 16-pin SOIC package. Device operation is specified over a temperature range from –40°C to +125°C ambient.

The ISO5852S device is a 5.7-kV RMS, reinforced isolated gate driver for IGBTs and MOSFETs with split outputs, OUTH and OUTL, providing 2.5-A source and 5-A sink current. The input side operates from a single 2.25-V to 5.5-V supply. The output side allows for a supply range from minimum 15 V to maximum 30 V. Two complementary CMOS inputs control the output state of the gate driver. The short propagation time of 76 ns provides accurate control of the output stage.

An internal desaturation (DESAT) fault detection recognizes when the IGBT is in an overcurrent condition. Upon a DESAT detect, a mute logic immediately blocks the output of the isolator and initiates a soft-turnoff procedure which disables the OUTH pin and pulls the OUTL pin to low over a time span of 2 µs. When the OUTL pin reaches 2 V with respect to the most-negative supply potential, V EE2, the gate-driver output is pulled hard to the V EE2 potential, turning the IGBT immediately off.

When desaturation is active, a fault signal is sent across the isolation barrier, pulling the FLT output at the input side low and blocking the isolator input. Mute logic is activated through the soft-turnoff period. The FLT output condition is latched and can be reset only after the RDY pin goes high, through a low-active pulse at the RST input.

When the IGBT is turned off during normal operation with a bipolar output supply, the output is hard clamp to V EE2. If the output supply is unipolar, an active Miller clamp can be used, allowing Miller current to sink across a low-impedance path which prevents the IGBT from dynamic turnon during high-voltage transient conditions.

The readiness for the gate driver to be operated is under the control of two undervoltage-lockout circuits monitoring the input-side and output-side supplies. If either side has insufficient supply, the RDY output goes low, otherwise this output is high.

The ISO5852S device is available in a 16-pin SOIC package. Device operation is specified over a temperature range from –40°C to +125°C ambient.

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Technische Dokumentation

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Top-Dokumentation Typ Titel Format-Optionen Neueste englische Version herunterladen Datum
* Datenblatt ISO5852S High-CMTI 2.5-A and 5-A Reinforced Isolated IGBT, MOSFET Gate Driver With Split Outputs and Active Protection Features datasheet (Rev. C) PDF | HTML 30.05.2023
Zertifikat VDE Certificate for Reinforced Isolation for DIN EN IEC 60747-17 (Rev. AB) 15.07.2026
EVM User's guide UCC2181xx, UCC217xx, and ISO5x5x Evaluation Module (Rev. A) PDF | HTML 08.06.2026
Whitepaper High-voltage reinforced isolation: Definitions and test methodologies (Rev. A) PDF | HTML 12.05.2026
Zertifikat TUV Certificate for Isolation Devices (Rev. M) 07.05.2026
Zertifikat UL Certificate of Compliance File E181974 Vol 4 Sec 6 (Rev. S) 07.05.2026
Application brief Does My Design Need a Miller Clamp? PDF | HTML 11.12.2024
Anwendungshinweis Choosing Appropriate Protection Approach for IGBT and SiC Power Modules PDF | HTML 19.07.2024
Anwendungshinweis Digital Isolator Design Guide (Rev. G) PDF | HTML 13.09.2023
Whitepaper Circuit Board Insulation Design According to IEC60664 for Motor Drive Apps PDF | HTML 31.08.2023
Zertifikat ISO5451 CQC Certificate of Product Certification PDF | HTML 16.08.2023
Anwendungshinweis Comparative Analysis of Two Different Methods for Gate-Drive Current Boosting (Rev. A) PDF | HTML 17.02.2022
Application brief The Use and Benefits of Ferrite Beads in Gate Drive Circuits PDF | HTML 16.12.2021
Zertifikat CSA Certification (Rev. Q) 14.06.2021
Application brief External Gate Resistor Selection Guide (Rev. A) 28.02.2020
Application brief Understanding Peak IOH and IOL Currents (Rev. A) 28.02.2020
Whitepaper Power Electronics in Motor Drives: Where is it? (Rev. A) 01.10.2019
Technischer Artikel Designing highly efficient, powerful and fast EV charging stations PDF | HTML 06.08.2019
Analog Design Journal Pushing the envelope with high-performance digital-isolation technology (Rev. A) 22.08.2018
Informationen zur funktionalen Sicherheit Isolation in solar power converters: Understanding the IEC62109-1 safety standar (Rev. A) 18.05.2018
Technischer Artikel Why capacitive isolation: a vital building block for sensors in smart cities PDF | HTML 16.01.2018
Anwendungshinweis Isolation Glossary (Rev. A) 19.09.2017
Technischer Artikel Understanding isolator failure modes for safe isolation PDF | HTML 28.03.2016
Technischer Artikel 7 steps to choose the right isolators for AC motor-drive applications PDF | HTML 24.11.2015
Analog Design Journal Common-mode transient immunity for isolated gate drivers 30.10.2015
Analog Design Journal 4Q 2015 Analog Applications Journal 30.10.2015
Whitepaper Isolation in AC Motor Drives: Understanding the IEC 61800-5-1 Safety Standard (Rev. B) 25.09.2015
Whitepaper Understanding electromagnetic compliance tests in digital isolators 17.10.2014
Anwendungshinweis Shelf-Life Evaluation of Lead-Free Component Finishes 24.05.2004

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