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ISO5851

ACTIVE

5.7kVrms, 2.5A/5A single-channel isolated gate driver with active protection features

Product details

Number of channels 1 Isolation rating Reinforced Withstand isolation voltage (VISO) (Vrms) 5700 Working isolation voltage (VIOWM) (Vrms) 2121 Transient isolation voltage (VIOTM) (VPK) 8000 Power switch IGBT, MOSFET Peak output current (A) 5 Features Active miller clamp, Fault reporting, Power good, Short circuit protection Output VCC/VDD (max) (V) 30 Output VCC/VDD (min) (V) 15 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 5.5 Propagation delay time (µs) 0.076 Input threshold CMOS Operating temperature range (°C) -40 to 125 Rating Catalog Bootstrap supply voltage (max) (V) 2121 Rise time (ns) 20 Fall time (ns) 20 Undervoltage lockout (typ) (V) 12
Number of channels 1 Isolation rating Reinforced Withstand isolation voltage (VISO) (Vrms) 5700 Working isolation voltage (VIOWM) (Vrms) 2121 Transient isolation voltage (VIOTM) (VPK) 8000 Power switch IGBT, MOSFET Peak output current (A) 5 Features Active miller clamp, Fault reporting, Power good, Short circuit protection Output VCC/VDD (max) (V) 30 Output VCC/VDD (min) (V) 15 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 5.5 Propagation delay time (µs) 0.076 Input threshold CMOS Operating temperature range (°C) -40 to 125 Rating Catalog Bootstrap supply voltage (max) (V) 2121 Rise time (ns) 20 Fall time (ns) 20 Undervoltage lockout (typ) (V) 12
SOIC (DW) 16 106.09 mm² 10.3 x 10.3
  • 100-kV/µs Minimum Common-Mode Transient Immunity (CMTI) at V CM = 1500 V
  • 2.5-A Peak Source and 5-A Peak Sink Currents
  • Short Propagation Delay: 76 ns (Typ), 110 ns (Max)
  • 2-A Active Miller Clamp
  • Output Short-Circuit Clamp
  • Fault Alarm upon Desaturation Detection is Signaled on FLT and Reset Through RST
  • Input and Output Undervoltage Lockout (UVLO) with Ready (RDY) Pin Indication
  • Active Output Pull-down and Default Low Outputs with Low Supply or Floating Inputs
  • 3-V to 5.5-V Input Supply Voltage
  • 15-V to 30-V Output Driver Supply Voltage
  • CMOS Compatible Inputs
  • Rejects Input Pulses and Noise Transients Shorter Than 20 ns
  • Operating Temperature: –40°C to +125°C Ambient
  • Isolation Surge Withstand Voltage 12800-V PK
  • Safety-Related Certifications:
    • 8000-V PK V IOTM and 2121-V PK V IORM Reinforced Isolation per DIN V VDE V 0884-10 (VDE V 0884-10):2006-12
    • 5700-V RMS Isolation for 1 Minute per UL 1577
    • CSA Component Acceptance Notice 5A, IEC 60950–1 and IEC 60601–1 End Equipment Standards
    • TUV Certification per EN 61010-1 and EN 60950-1
    • GB4943.1-2011 CQC Certification
  • 100-kV/µs Minimum Common-Mode Transient Immunity (CMTI) at V CM = 1500 V
  • 2.5-A Peak Source and 5-A Peak Sink Currents
  • Short Propagation Delay: 76 ns (Typ), 110 ns (Max)
  • 2-A Active Miller Clamp
  • Output Short-Circuit Clamp
  • Fault Alarm upon Desaturation Detection is Signaled on FLT and Reset Through RST
  • Input and Output Undervoltage Lockout (UVLO) with Ready (RDY) Pin Indication
  • Active Output Pull-down and Default Low Outputs with Low Supply or Floating Inputs
  • 3-V to 5.5-V Input Supply Voltage
  • 15-V to 30-V Output Driver Supply Voltage
  • CMOS Compatible Inputs
  • Rejects Input Pulses and Noise Transients Shorter Than 20 ns
  • Operating Temperature: –40°C to +125°C Ambient
  • Isolation Surge Withstand Voltage 12800-V PK
  • Safety-Related Certifications:
    • 8000-V PK V IOTM and 2121-V PK V IORM Reinforced Isolation per DIN V VDE V 0884-10 (VDE V 0884-10):2006-12
    • 5700-V RMS Isolation for 1 Minute per UL 1577
    • CSA Component Acceptance Notice 5A, IEC 60950–1 and IEC 60601–1 End Equipment Standards
    • TUV Certification per EN 61010-1 and EN 60950-1
    • GB4943.1-2011 CQC Certification

The ISO5851 is a 5.7-kV RMS, reinforced isolated gate driver for IGBTs and MOSFETs with 2.5-A source and 5-A sink current. The input side operates from a single 3-V to 5.5-V supply. The output side allows for a supply range from minimum 15 V to maximum 30 V. Two complementary CMOS inputs control the output state of the gate driver. The short propagation time of 76 ns assures accurate control of the output stage.

An internal desaturation (DESAT) fault detection recognizes when the IGBT is in an overload condition. Upon a DESAT detect, the gate driver output is driven low to V EE2 potential, turning the IGBT immediately off.

When desaturation is active, a fault signal is sent across the isolation barrier, pulling the FLT output at the input side low and blocking the isolator input. The FLT output condition is latched and can be reset through a low-active pulse at the RST input.

When the IGBT is turned off during normal operation with bipolar output supply, the output is hard clamp to V EE2. If the output supply is unipolar, an active Miller clamp can be used, allowing Miller current to sink across a low impedance path preventing IGBT to be dynamically turned on during high voltage transient conditions.

When desaturation is active, a fault signal is sent across the isolation barrier pulling the FLT output at the input side low and blocking the isolator input. The FLT output condition is latched and can be reset through a low-active pulse at the RST input.

When the IGBT is turned off during normal operation with bipolar output supply, the output is hard clamp to V EE2. If the output supply is unipolar, an active Miller clamp can be used, allowing Miller current to sink across a low impedance path preventing IGBT to be dynamically turned on during high voltage transient conditions.

The readiness for the gate driver to be operated is under the control of two undervoltage-lockout circuits monitoring the input side and output side supplies. If either side has insufficient supply the RDY output goes low; otherwise, this output is high.

The ISO5851 is available in a 16-pin SOIC package. Device operation is specified over a temperature range from –40°C to +125°C ambient.

The ISO5851 is a 5.7-kV RMS, reinforced isolated gate driver for IGBTs and MOSFETs with 2.5-A source and 5-A sink current. The input side operates from a single 3-V to 5.5-V supply. The output side allows for a supply range from minimum 15 V to maximum 30 V. Two complementary CMOS inputs control the output state of the gate driver. The short propagation time of 76 ns assures accurate control of the output stage.

An internal desaturation (DESAT) fault detection recognizes when the IGBT is in an overload condition. Upon a DESAT detect, the gate driver output is driven low to V EE2 potential, turning the IGBT immediately off.

When desaturation is active, a fault signal is sent across the isolation barrier, pulling the FLT output at the input side low and blocking the isolator input. The FLT output condition is latched and can be reset through a low-active pulse at the RST input.

When the IGBT is turned off during normal operation with bipolar output supply, the output is hard clamp to V EE2. If the output supply is unipolar, an active Miller clamp can be used, allowing Miller current to sink across a low impedance path preventing IGBT to be dynamically turned on during high voltage transient conditions.

When desaturation is active, a fault signal is sent across the isolation barrier pulling the FLT output at the input side low and blocking the isolator input. The FLT output condition is latched and can be reset through a low-active pulse at the RST input.

When the IGBT is turned off during normal operation with bipolar output supply, the output is hard clamp to V EE2. If the output supply is unipolar, an active Miller clamp can be used, allowing Miller current to sink across a low impedance path preventing IGBT to be dynamically turned on during high voltage transient conditions.

The readiness for the gate driver to be operated is under the control of two undervoltage-lockout circuits monitoring the input side and output side supplies. If either side has insufficient supply the RDY output goes low; otherwise, this output is high.

The ISO5851 is available in a 16-pin SOIC package. Device operation is specified over a temperature range from –40°C to +125°C ambient.

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Technical documentation

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Type Title Date
* Data sheet ISO5851 High-CMTI 2.5-A and 5-A Isolated IGBT, MOSFET Gate Driver With Active Protection Features datasheet (Rev. C) PDF | HTML 30 May 2023
Certificate VDE Certificate for Reinforced Isolation for DIN EN IEC 60747-17 (Rev. S) 29 Feb 2024
White paper Understanding failure modes in isolators (Rev. B) PDF | HTML 29 Jan 2024
Application note Digital Isolator Design Guide (Rev. G) PDF | HTML 13 Sep 2023
User guide UCC217xx and ISO5x5x Half-Bridge EVM User's Guide for Wolfspeed 1200-V SiC 01 Sep 2023
White paper Circuit Board Insulation Design According to IEC60664 for Motor Drive Apps PDF | HTML 31 Aug 2023
Certificate ISO5451 CQC Certificate of Product Certification 16 Aug 2023
Certificate TUV Certificate for Isolation Devices (Rev. K) 05 Aug 2022
Certificate UL Certificate of Compliance File E181974 Vol 4 Sec 6 (Rev. P) 05 Aug 2022
Application brief The Use and Benefits of Ferrite Beads in Gate Drive Circuits PDF | HTML 16 Dec 2021
Certificate CSA Certification (Rev. Q) 14 Jun 2021
Application brief External Gate Resistor Selection Guide (Rev. A) 28 Feb 2020
Application brief Understanding Peak IOH and IOL Currents (Rev. A) 28 Feb 2020
Functional safety information Isolation in AC Motor Drives: Understanding the IEC 61800-5-1 Safety Standard (Rev. A) 19 Sep 2019
Analog Design Journal Pushing the envelope with high-performance digital-isolation technology (Rev. A) 22 Aug 2018
Functional safety information Isolation in solar power converters: Understanding the IEC62109-1 safety standar (Rev. A) 18 May 2018
Application note Isolation Glossary (Rev. A) 19 Sep 2017
Technical article Understanding isolator failure modes for safe isolation PDF | HTML 28 Mar 2016
Technical article 7 steps to choose the right isolators for AC motor-drive applications PDF | HTML 24 Nov 2015
Analog Design Journal 4Q 2015 Analog Applications Journal 30 Oct 2015
Analog Design Journal Common-mode transient immunity for isolated gate drivers 30 Oct 2015
Analog Design Journal Pushing the envelope with high-performance digital-isolation technology 30 Oct 2015
Technical article What you can do with a high-CMTI isolator PDF | HTML 01 Oct 2015
Technical article Isolators as insulators: using isolation for electrical safety PDF | HTML 25 Aug 2015
EVM User's guide ISO5851 Evaluation Module User's Guide 19 Jun 2015
White paper Understanding electromagnetic compliance tests in digital isolators 17 Oct 2014
White paper High-voltage reinforced isolation: Definitions and test methodologies 16 Oct 2014
Application note Shelf-Life Evaluation of Lead-Free Component Finishes 24 May 2004

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Evaluation board

ISO5851EVM — ISO5851 evaluation module (EVM)

This evaluation module, featuring ISO5851 reinforced isolated gate driver device, allows designers to evaluate device AC and DC performance with a pre-populated 1-nF load or with a user-installed IGBT in either of the standard TO-247 or TO-220 packages.

User guide: PDF
Not available on TI.com
Simulation model

ISO5851 IBIS Model

SLLM275.ZIP (33 KB) - IBIS Model
Simulation model

ISO5851 PSpice Transient Model

SLLM291.ZIP (73 KB) - PSpice Model
Simulation model

ISO5851 TINA-TI Transient Reference Design

SLLM336.TSC (594 KB) - TINA-TI Reference Design
Simulation model

ISO5851 TINA-TI Transient Spice Model

SLLM335.ZIP (21 KB) - TINA-TI Spice Model
Simulation model

ISO5851 Unencrypted PSPICE Transient Model

SLLM447.ZIP (3 KB) - PSpice Model
Design tool

SLLR118 ISO5851EVM Design Files

Supported products & hardware

Supported products & hardware

Products
Isolated gate drivers
ISO5851 5.7kVrms, 2.5A/5A single-channel isolated gate driver with active protection features
Hardware development
Evaluation board
ISO5851EVM ISO5851 evaluation module (EVM)
Simulation tool

PSPICE-FOR-TI — PSpice® for TI design and simulation tool

PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)
Reference designs

TIDA-00446 — Small Form-Factor Reinforced Isolated IGBT Gate Drive Reference Design for 3 Phase Inverter

The TIDA-00446 reference design consists of six reinforced isolated IGBT gate drivers along with dedicated gate drive power supplies. This compact reference design is intended to control IGBT’s in 3-phase inverters like AC drives, uninterruptible power supplies (UPS) and solar inverters. The (...)
Design guide: PDF
Schematic: PDF
Package Pins Download
SOIC (DW) 16 View options

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