Product details

Vin (Min) (V) 0.48 Vin (Max) (V) 42 Features Linear control, Reverse polarity protection, Reverse current blocking Iq (Typ) (mA) 0 Iq (Max) (mA) 0 IGate source (Typ) (uA) 10 IGate source (Max) (uA) 9.4 IGate sink (Typ) (mA) 0.01 IGate pulsed (Typ) (A) 0.1 Operating temperature range (C) -40 to 125 IReverse (Typ) (uA) 110 VSense reverse (Typ) (mV) 20 Design support EVM Rating Automotive Channel(s) controlled (#) 1 FET External VGS (Max) (V) 2.5
Vin (Min) (V) 0.48 Vin (Max) (V) 42 Features Linear control, Reverse polarity protection, Reverse current blocking Iq (Typ) (mA) 0 Iq (Max) (mA) 0 IGate source (Typ) (uA) 10 IGate source (Max) (uA) 9.4 IGate sink (Typ) (mA) 0.01 IGate pulsed (Typ) (A) 0.1 Operating temperature range (C) -40 to 125 IReverse (Typ) (uA) 110 VSense reverse (Typ) (mV) 20 Design support EVM Rating Automotive Channel(s) controlled (#) 1 FET External VGS (Max) (V) 2.5
VSSOP (DGK) 8 15 mm² 3 x 4.9
  • Qualified for Automotive Applications
  • AEC-Q100 Qualified With the Following Results:
    • Exceeds HBM ESD Classification Level 2
    • Device CDM ESD Classification Level C4B
  • Maximum reverse voltage of 45 V
  • No Positive Voltage limitation to Anode Terminal
  • Charge Pump Gate Driver for External N-Channel
    MOSFET
  • Lower Power Dissipation than Schottky
    Diode/PFET Solutions
  • Low Reverse Leakage Current
  • Zero IQ
  • Fast 2-µs Response to Reverse Polarity
  • –40°C to +125°C Operating Ambient Temperature
  • Can be Used in OR-ing Applications
  • Meets CISPR25 EMI Specification
  • Meets Automotive ISO7637 Transient
    Requirements with a Suitable TVS Diode
  • No Peak Current Limit
  • Qualified for Automotive Applications
  • AEC-Q100 Qualified With the Following Results:
    • Exceeds HBM ESD Classification Level 2
    • Device CDM ESD Classification Level C4B
  • Maximum reverse voltage of 45 V
  • No Positive Voltage limitation to Anode Terminal
  • Charge Pump Gate Driver for External N-Channel
    MOSFET
  • Lower Power Dissipation than Schottky
    Diode/PFET Solutions
  • Low Reverse Leakage Current
  • Zero IQ
  • Fast 2-µs Response to Reverse Polarity
  • –40°C to +125°C Operating Ambient Temperature
  • Can be Used in OR-ing Applications
  • Meets CISPR25 EMI Specification
  • Meets Automotive ISO7637 Transient
    Requirements with a Suitable TVS Diode
  • No Peak Current Limit

The LM74610-Q1 is a controller device that can be used with an N-Channel MOSFET in a reverse polarity protection circuitry. It is designed to drive an external MOSFET to emulate an ideal diode rectifier when connected in series with a power source. A unique advantage of this scheme is that it is not referenced to ground and thus has Zero Iq.

The LM74610-Q1 controller provides a gate drive for an external N-Channel MOSFET and a fast response internal comparator to discharge the MOSFET Gate in the event of reverse polarity. This fast pull-down feature limits the amount and duration of reverse current flow if opposite polarity is sensed. The device design also meets CISPR25 Class 5 EMI specifications and automotive ISO7637 transient requirements with a suitable TVS diode.

The LM74610-Q1 is a controller device that can be used with an N-Channel MOSFET in a reverse polarity protection circuitry. It is designed to drive an external MOSFET to emulate an ideal diode rectifier when connected in series with a power source. A unique advantage of this scheme is that it is not referenced to ground and thus has Zero Iq.

The LM74610-Q1 controller provides a gate drive for an external N-Channel MOSFET and a fast response internal comparator to discharge the MOSFET Gate in the event of reverse polarity. This fast pull-down feature limits the amount and duration of reverse current flow if opposite polarity is sensed. The device design also meets CISPR25 Class 5 EMI specifications and automotive ISO7637 transient requirements with a suitable TVS diode.

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Technical documentation

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Type Title Date
* Data sheet LM74610-Q1 Zero IQ Reverse Polarity Protection Smart Diode Controller datasheet (Rev. B) 07 Jun 2016
Application note Basics of Ideal Diodes (Rev. B) 05 Oct 2021
Test report Automotive Wide-VIN to Point-of-Load Power Supply Reference Design (Rev. A) 26 Mar 2020
E-book 11 Ways to Protect Your Power Path white paper 03 Jul 2019
Technical article Build a sub-20W CISPR25 Class 5 power design for automotive infotainment processors 02 May 2017
Application note Active OR-ing Solution with LM74610 Smart Diode Controller (Rev. B) 01 Mar 2017
Analog design journal Designing the front-end DC/DC conversion stage to withstand automotive transient 18 Jan 2017
Technical article Reverse-polarity protection comparison: diode vs. PFET vs. a smart diode solution 21 Dec 2015
User guide LM74610-DQEVM User’s Guide 12 Oct 2015
User guide LM74610-SQ EVM User’s Guide 10 Oct 2015

Design & development

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Simulation model

LM74610-Q1 Unencrypted PSpice Transient Model Package (Rev. C)

SNOM560C.ZIP (55 KB) - PSpice Model
Simulation model

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SNOM609.ZIP (28 KB) - TINA-TI Spice Model
Simulation model

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SNOM610.TSC (778 KB) - TINA-TI Reference Design
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PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)
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