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UCC5870-Q1

ACTIVE

Automotive, 3.75kVrms 30A single-channel functional safety isolated gate driver for IGBT/SiC

Product details

Number of channels 1 Isolation rating Basic Withstand isolation voltage (VISO) (Vrms) 3750 Working isolation voltage (VIOWM) (Vrms) 1000 Transient isolation voltage (VIOTM) (VPK) 5250 Power switch IGBT, SiCFET Peak output current (A) 30 Features Active miller clamp, Fault reporting, Programmable dead time, Short circuit protection, Soft turn-off, Soft turnoff, Two-level turn-off, Two-level turnoff Output VCC/VDD (max) (V) 30 Output VCC/VDD (min) (V) 15 Input VCC (min) (V) 3 Input VCC (max) (V) 5.5 TI functional safety category Functional Safety-Compliant Propagation delay time (µs) 0.15 Input threshold CMOS Operating temperature range (°C) -40 to 125 Rating Automotive Bus voltage (max) (V) 1000 Rise time (ns) 150 Fall time (ns) 150 Undervoltage lockout (typ) (V) Programmable
Number of channels 1 Isolation rating Basic Withstand isolation voltage (VISO) (Vrms) 3750 Working isolation voltage (VIOWM) (Vrms) 1000 Transient isolation voltage (VIOTM) (VPK) 5250 Power switch IGBT, SiCFET Peak output current (A) 30 Features Active miller clamp, Fault reporting, Programmable dead time, Short circuit protection, Soft turn-off, Soft turnoff, Two-level turn-off, Two-level turnoff Output VCC/VDD (max) (V) 30 Output VCC/VDD (min) (V) 15 Input VCC (min) (V) 3 Input VCC (max) (V) 5.5 TI functional safety category Functional Safety-Compliant Propagation delay time (µs) 0.15 Input threshold CMOS Operating temperature range (°C) -40 to 125 Rating Automotive Bus voltage (max) (V) 1000 Rise time (ns) 150 Fall time (ns) 150 Undervoltage lockout (typ) (V) Programmable
SSOP (DWJ) 36 131.84 mm² 12.8 x 10.3
  • Split output driver provides 30-A peak source and 30-A peak sink currents
  • Adjustable "on the fly" gate drive strength
  • Interlock and shoot-through protection with 150-ns(max) propagation delay and programmable minimum pulse rejection
  • Primary and Secondary side active short circuit (ASC) support
  • Configurable power transistor protections
    • DESAT based short circuit protection
    • Shunt resistor based overcurrent and short circuit protection
    • NTC based overtemperature protection
    • Programmable soft turnoff (STO) and two-level turnoff (2LTOFF) during power transistor faults
  • Functional Safety-Compliant
  • Integrated diagnostics:
    • Built-in self test (BIST) for protection comparators
    • IN+ to transistor gate path integrity
    • Power transistor threshold monitoring
    • Internal clock monitoring
    • Fault alarm (nFLT1) and warning (nFLT2) outputs
  • Integrated 4-A active Miller clamp or optional external drive for Miller clamp transistor
  • Advanced high voltage clamping control
  • Internal and external supply undervoltage and overvoltage protection
  • Active output pulldown and default low outputs with low supply or floating inputs
  • Driver die temperature sensing and overtemperature protection
  • 100-kV/µs minimum common mode transient immunity (CMTI) at VCM = 1000V
  • SPI based device reconfiguration, verification, supervision, and diagnosis
  • Integrated 10-bit ADC for power transistor temperature, voltage, and current monitoring
  • Safety-related certifications:
    • 3750– VRMS isolation for 1 minute per UL1577 (planned)
  • AEC-Q100 qualified with the following results:
    • Device temperature grade 0: –40°C to 125°C ambient operating temperature
    • Device HBM ESD classification level 2
    • Device CDM ESD classification level C4b
  • Split output driver provides 30-A peak source and 30-A peak sink currents
  • Adjustable "on the fly" gate drive strength
  • Interlock and shoot-through protection with 150-ns(max) propagation delay and programmable minimum pulse rejection
  • Primary and Secondary side active short circuit (ASC) support
  • Configurable power transistor protections
    • DESAT based short circuit protection
    • Shunt resistor based overcurrent and short circuit protection
    • NTC based overtemperature protection
    • Programmable soft turnoff (STO) and two-level turnoff (2LTOFF) during power transistor faults
  • Functional Safety-Compliant
  • Integrated diagnostics:
    • Built-in self test (BIST) for protection comparators
    • IN+ to transistor gate path integrity
    • Power transistor threshold monitoring
    • Internal clock monitoring
    • Fault alarm (nFLT1) and warning (nFLT2) outputs
  • Integrated 4-A active Miller clamp or optional external drive for Miller clamp transistor
  • Advanced high voltage clamping control
  • Internal and external supply undervoltage and overvoltage protection
  • Active output pulldown and default low outputs with low supply or floating inputs
  • Driver die temperature sensing and overtemperature protection
  • 100-kV/µs minimum common mode transient immunity (CMTI) at VCM = 1000V
  • SPI based device reconfiguration, verification, supervision, and diagnosis
  • Integrated 10-bit ADC for power transistor temperature, voltage, and current monitoring
  • Safety-related certifications:
    • 3750– VRMS isolation for 1 minute per UL1577 (planned)
  • AEC-Q100 qualified with the following results:
    • Device temperature grade 0: –40°C to 125°C ambient operating temperature
    • Device HBM ESD classification level 2
    • Device CDM ESD classification level C4b

The UCC5870-Q1 device is an isolated, highly configurable single-channel gate driver targeted to drive high power SiC MOSFETs and IGBTs in EV/HEV applications. Power transistor protections, such as shunt-resistor–based overcurrent, NTC-based overtemperature, and DESAT detection, include selectable soft turn-off or two-level turn-off during these faults. To further reduce the application size, the UCC5870-Q1 integrates a 4-A active Miller clamp during switching, and an active gate pulldown while the driver is unpowered. An integrated 10-bit ADC enables monitoring of up to six analog inputs and the gate driver temperature for enhanced system management. Diagnostics and detection functions are integrated to simplify the design of ASIL-D compliant systems. The parameters and thresholds for these features are configurable using the SPI interface, which allows the device to be used with nearly any SiC MOSFET or IGBT.

The UCC5870-Q1 device is an isolated, highly configurable single-channel gate driver targeted to drive high power SiC MOSFETs and IGBTs in EV/HEV applications. Power transistor protections, such as shunt-resistor–based overcurrent, NTC-based overtemperature, and DESAT detection, include selectable soft turn-off or two-level turn-off during these faults. To further reduce the application size, the UCC5870-Q1 integrates a 4-A active Miller clamp during switching, and an active gate pulldown while the driver is unpowered. An integrated 10-bit ADC enables monitoring of up to six analog inputs and the gate driver temperature for enhanced system management. Diagnostics and detection functions are integrated to simplify the design of ASIL-D compliant systems. The parameters and thresholds for these features are configurable using the SPI interface, which allows the device to be used with nearly any SiC MOSFET or IGBT.

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Technical documentation

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Type Title Date
* Data sheet UCC5870-Q1 Isolated IGBT, SiC MOSFET Gate Driver With Real-Time datasheet (Rev. C) 01 Sep 2021
White paper Addressing High-Volt Design Challenges w/ Reliable and Affordable Isolation Tech (Rev. C) PDF | HTML 26 Sep 2023
White paper 以可靠且經濟實惠的隔離技術解決高電壓設計難題 (Rev. B) PDF | HTML 22 Sep 2023
White paper 높은 신뢰도와 합리적인 가격대의 절연 기술 개발과 관련한 고전압 설계 문제의 해결 (Rev. B) PDF | HTML 19 Sep 2023
White paper Design Priorities in EV Traction Inverter With Optimum Performance (Rev. A) PDF | HTML 08 Feb 2023
Technical article Improving safety in EV traction inverter systems PDF | HTML 08 Dec 2022
Application note HEV/EV Traction Inverter Design Guide Using Isolated IGBT and SiC Gate Drivers (Rev. B) PDF | HTML 21 Oct 2022
White paper 具備最佳性能的 EV 牽引逆變器設計優先順序 PDF | HTML 27 Sep 2022
White paper 최적의성능을 갖춘 EV 트랙션 인버터에서 설계 우선 순위 PDF | HTML 27 Sep 2022
White paper Traction Inverters – A Driving Force Behind Vehicle Electrification PDF | HTML 08 Sep 2022
White paper 牽引逆變器 – 車輛電氣化背後的驅動力量 PDF | HTML 17 Aug 2022
White paper 트랙션 인버터 – 차량 전기화를 이끄는 동력 PDF | HTML 17 Aug 2022
Technical article Understanding functional safety for gate drivers and traction inverter systems PDF | HTML 10 Aug 2022
Technical article Reducing power loss and thermal dissipation in SiC traction inverters PDF | HTML 10 Jun 2022
Application brief The Use and Benefits of Ferrite Beads in Gate Drive Circuits PDF | HTML 16 Dec 2021
Certificate UL 1577 Certificate of Compliance 22 Oct 2021
Technical article Driving next-generation EV systems with a distributed architecture PDF | HTML 27 Sep 2021
White paper A High-Performance, Integrated Powertrain Solution: The Key to EV Adoption (Rev. A) 15 Apr 2021
White paper 高效整合式動力傳動解決方案: EV 普及的關鍵所在 14 Apr 2021
White paper 고성능 통합 파워트레인 솔루션: EV 도입의 핵심 14 Apr 2021
More literature Protecting Power Devices in Electric Vehicle Applications 23 Mar 2021
Certificate UCC5870QEVM-045 EU Declaration of Conformity (DoC) 22 Feb 2021
EVM User's guide UCC5870-Q1EVM-045 User's Guide PDF | HTML 04 Feb 2020
EVM User's guide UCC5870-Q1 Evaluation Module User's Guide 01 Oct 2019

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Evaluation board

UCC5870QEVM-045 — UCC5870-Q1 functional safety compliant 15-A isolated IGBT/SiC MOSFET gate driver three-phase EVM

The UCC5870-Q1 three-phase evaluation module (EVM) is designed for evaluation of TI's 15-A isolated single-channel gate driver with advanced protection features. This EVM is targeted to drive high-power SiC MOSFETs and IGBTs in EV/HEV applications. This three-phase EVM can be used for debugging (...)

User guide: PDF | HTML
Not available on TI.com
GUI for evaluation module (EVM)

UCC5870QDWJEVM-026-GUI UCC5870-Q1 EVM GUI Software

UCC5870-Q1 EVM GUI Software
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Supported products & hardware

Supported products & hardware

Products
Isolated gate drivers
UCC5870-Q1 Automotive, 3.75kVrms 30A single-channel functional safety isolated gate driver for IGBT/SiC UCC5871-Q1 Automotive 30-A isolated 5.7-kV VRMS IGBT/SiC MOSFET gate driver with advanced protection features
Simulation model

UCC5870-Q1 SIMPLIS Model (Rev. A)

SLUM763A.ZIP (250 KB) - SIMPLIS Model
Calculation tool

SLURAZ3 UCC5870-Q1 XL Calculator Tool

lock = Requires export approval (1 minute)
Supported products & hardware

Supported products & hardware

Products
Isolated gate drivers
UCC5870-Q1 Automotive, 3.75kVrms 30A single-channel functional safety isolated gate driver for IGBT/SiC
Simulation tool

PSPICE-FOR-TI — PSpice® for TI design and simulation tool

PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)
Reference designs

TIDM-02009 — ASIL D safety concept-assessed high-speed traction, bi-directional DC/DC conversion reference design

This reference design demonstrates control of HEV/EV traction inverter and bi-directional DC-DC converter by a single TMS320F28388D real-time C2000™ MCU. The traction control uses a software-based resolver to digital converter (RDC) driving the motor to a high speed up to 20,000 RPM. The (...)
Design guide: PDF
Schematic: PDF
Reference designs

PMP22817 — Automotive SPI-programmable gate driver and bias supply with integrated transformer reference design

This reference design provides isolated-bias supply and isolated-gate driver for power switches in traction inverters and onboard chargers. Both the bias power and driver provide the high isolation (3-kV RMS for one minute) needed for 800-VDC bus application. The isolated bias provides 24 VDC both (...)
Test report: PDF
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SSOP (DWJ) 36 View options

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