Product details

Number of channels (#) 1 Isolation rating (Vrms) 5700 Power switch IGBT, SiCFET Peak output current (A) 30 DIN V VDE V 0884-10 transient overvoltage rating (Vpk) 8000 DIN V VDE V 0884-10 working voltage (Vpk) 1500 Output VCC/VDD (Max) (V) 30 Output VCC/VDD (Min) (V) 15 Input VCC (Min) (V) 3.3 Input VCC (Max) (V) 5 Prop delay (ns) 150 Operating temperature range (C) -40 to 125 Undervoltage lockout (Typ) Programmable
Number of channels (#) 1 Isolation rating (Vrms) 5700 Power switch IGBT, SiCFET Peak output current (A) 30 DIN V VDE V 0884-10 transient overvoltage rating (Vpk) 8000 DIN V VDE V 0884-10 working voltage (Vpk) 1500 Output VCC/VDD (Max) (V) 30 Output VCC/VDD (Min) (V) 15 Input VCC (Min) (V) 3.3 Input VCC (Max) (V) 5 Prop delay (ns) 150 Operating temperature range (C) -40 to 125 Undervoltage lockout (Typ) Programmable
SSOP (DWJ) 36 96 mm² 12.8 x 7.5 SSOP (DWJ) 36
  • Split output driver provides 30-A peak source and 30-A peak sink currents
  • Interlock and shoot-through protection with 150-ns(max) propagation delay and programmable minimum pulse rejection
  • Primary and secondary side active short circuit (ASC) support
  • Configurable power transistor protections
    • DESAT based short circuit protection
    • Shunt resistor based overcurrent and short circuit protection
    • NTC based overtemperature protection
    • Programmable soft turnoff (STO) and two-level turnoff (2LTOFF) during power transistor faults
  • Functional Safety-Compliant
  • Integrated diagnostics:
    • Built-in self test (BIST) for protection comparators
    • IN+ to transistor gate path integrity
    • Power transistor threshold monitoring
    • Internal clock monitoring
    • Fault alarm (nFLT1) and warning (nFLT2) outputs
  • Integrated 4-A active Miller clamp or optional external drive for Miller clamp transistor
  • Advanced high voltage clamping control
  • Internal and external supply undervoltage and overvoltage protection
  • Active output pulldown and default low outputs with low supply or floating inputs
  • Driver die temperature sensing and overtemperature protection
  • 100-kV/µs minimum common mode transient immunity (CMTI) at VCM = 1000 V
  • SPI based device reconfiguration, verification, supervision, and diagnosis
  • Integrated 10-bit ADC for power transistor temperature, voltage, and current monitoring
  • Split output driver provides 30-A peak source and 30-A peak sink currents
  • Interlock and shoot-through protection with 150-ns(max) propagation delay and programmable minimum pulse rejection
  • Primary and secondary side active short circuit (ASC) support
  • Configurable power transistor protections
    • DESAT based short circuit protection
    • Shunt resistor based overcurrent and short circuit protection
    • NTC based overtemperature protection
    • Programmable soft turnoff (STO) and two-level turnoff (2LTOFF) during power transistor faults
  • Functional Safety-Compliant
  • Integrated diagnostics:
    • Built-in self test (BIST) for protection comparators
    • IN+ to transistor gate path integrity
    • Power transistor threshold monitoring
    • Internal clock monitoring
    • Fault alarm (nFLT1) and warning (nFLT2) outputs
  • Integrated 4-A active Miller clamp or optional external drive for Miller clamp transistor
  • Advanced high voltage clamping control
  • Internal and external supply undervoltage and overvoltage protection
  • Active output pulldown and default low outputs with low supply or floating inputs
  • Driver die temperature sensing and overtemperature protection
  • 100-kV/µs minimum common mode transient immunity (CMTI) at VCM = 1000 V
  • SPI based device reconfiguration, verification, supervision, and diagnosis
  • Integrated 10-bit ADC for power transistor temperature, voltage, and current monitoring

The UCC5871-Q1 device is an isolated, highly configurable single-channel gate driver targeted to drive high power SiC MOSFETs and IGBTs in EV/HEV applications. Power transistor protections, such as shunt-resistor–based overcurrent, NTC-based overtemperature, and DESAT detection, include selectable soft turn-off or two-level turn-off during these faults. To further reduce the application size, the UCC5871-Q1 integrates a 4-A active Miller clamp during switching, and an active gate pulldown while the driver is unpowered. An integrated 10-bit ADC enables monitoring of up to six analog inputs and the gate driver temperature for enhanced system management. Diagnostics and detection functions are integrated to simplify the system design. The parameters and thresholds for these features are configurable using the SPI interface, which allows the device to be used with nearly any SiC MOSFET or IGBT.

The UCC5871-Q1 device is an isolated, highly configurable single-channel gate driver targeted to drive high power SiC MOSFETs and IGBTs in EV/HEV applications. Power transistor protections, such as shunt-resistor–based overcurrent, NTC-based overtemperature, and DESAT detection, include selectable soft turn-off or two-level turn-off during these faults. To further reduce the application size, the UCC5871-Q1 integrates a 4-A active Miller clamp during switching, and an active gate pulldown while the driver is unpowered. An integrated 10-bit ADC enables monitoring of up to six analog inputs and the gate driver temperature for enhanced system management. Diagnostics and detection functions are integrated to simplify the system design. The parameters and thresholds for these features are configurable using the SPI interface, which allows the device to be used with nearly any SiC MOSFET or IGBT.

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