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UCC5880-Q1

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Automotive, 20-A, isolated real-time variable IGBT/SiC MOSFET gate driver with advanced protection

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Data sheet

UCC5880-Q1

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Data sheet Order now

Product details

Number of channels 1 Isolation rating Reinforced Withstand isolation voltage (VISO) (Vrms) 5000 Working isolation voltage (VIOWM) (Vrms) 1414 Transient isolation voltage (VIOTM) (VPK) 7071 Power switch IGBT, SiCFET Peak output current (A) 20 Features Active miller clamp, Disable, Enable, Fault reporting, High CMTI Output VCC/VDD (max) (V) 30 Output VCC/VDD (min) (V) 12 Input VCC (min) (V) 3 Input VCC (max) (V) 5.5 TI functional safety category Functional Safety-Compliant Propagation delay time (µs) 0.15 Input threshold CMOS Operating temperature range (°C) -40 to 125 Rating Automotive Bus voltage (max) (V) 1414 Rise time (ns) 55 Fall time (ns) 55 Undervoltage lockout (typ) (V) Programmable
Number of channels 1 Isolation rating Reinforced Withstand isolation voltage (VISO) (Vrms) 5000 Working isolation voltage (VIOWM) (Vrms) 1414 Transient isolation voltage (VIOTM) (VPK) 7071 Power switch IGBT, SiCFET Peak output current (A) 20 Features Active miller clamp, Disable, Enable, Fault reporting, High CMTI Output VCC/VDD (max) (V) 30 Output VCC/VDD (min) (V) 12 Input VCC (min) (V) 3 Input VCC (max) (V) 5.5 TI functional safety category Functional Safety-Compliant Propagation delay time (µs) 0.15 Input threshold CMOS Operating temperature range (°C) -40 to 125 Rating Automotive Bus voltage (max) (V) 1414 Rise time (ns) 55 Fall time (ns) 55 Undervoltage lockout (typ) (V) Programmable
SSOP (DFC) 32 106.09 mm² 10.3 x 10.3
  • Dual output split driver with on-the-fly programmable drive strength
    • ±15-A and ±5-A drive current outputs
    • Digital input pins (GD*) for drive strength adjustment without SPI
    • 3 resistor settings R1, R2, or R1||R2
    • Integrated 4-A active Miller clamp or optional external drive for Miller clamp transistor
  • Primary and secondary side active short circuit (ASC) support
  • Internal and external supply under-voltage and over-voltage protection
  • Driver die temperature sensing and over temperature protection
  • Short-circuit protection:
    • 75-ns response time to over-current event
    • DESAT protection – selections up to 14 V
    • Shunt resistor based over-current protection
    • Configurable protection threshold values and blanking times
    • Programmable soft turnoff (STO) and two-level soft turnoff (2STO) current
  • Integrated 10-bit ADC
    • Power switch temperature, driver die temperature, DESAT pin voltage, VCC2 voltage, phase current, DC Link voltage
    • Programmable digital comparators
  • Advanced VCE/VDS clamping circuit
  • Functional Safety-Compliant
    • Developed for functional safety applications
    • Documentation available to aid ISO 26262 system design up to ASIL D
  • Integrated diagnostics:
    • Built in self-test (BIST) for protection comparators
    • Gate threshold voltage measurement for power device health monitoring
    • INP to transistor gate path integrity
    • Internal clock monitoring
    • Fault alarm and warning outputs (nFLT*)
    • ISO communication data integrity check
  • SPI based device reconfiguration, verification, supervision, and diagnosis
  • 100 kV/µs CMTI
  • Safety-related certifications:
    • 5-kVRMS isolation for 1 minute per UL1577 (planned)
    • Reinforced isolation 7070-VPK per DIN VDE 0884-11: 2017-01 (planned)
  • AEC-Q100 qualified with the following results:
    • Device temperature grade 1: -40°C to +125°C ambient operating temperature
    • Device HBM ESD classification level 2
    • Device CDM ESD classification level C4B
  • Dual output split driver with on-the-fly programmable drive strength
    • ±15-A and ±5-A drive current outputs
    • Digital input pins (GD*) for drive strength adjustment without SPI
    • 3 resistor settings R1, R2, or R1||R2
    • Integrated 4-A active Miller clamp or optional external drive for Miller clamp transistor
  • Primary and secondary side active short circuit (ASC) support
  • Internal and external supply under-voltage and over-voltage protection
  • Driver die temperature sensing and over temperature protection
  • Short-circuit protection:
    • 75-ns response time to over-current event
    • DESAT protection – selections up to 14 V
    • Shunt resistor based over-current protection
    • Configurable protection threshold values and blanking times
    • Programmable soft turnoff (STO) and two-level soft turnoff (2STO) current
  • Integrated 10-bit ADC
    • Power switch temperature, driver die temperature, DESAT pin voltage, VCC2 voltage, phase current, DC Link voltage
    • Programmable digital comparators
  • Advanced VCE/VDS clamping circuit
  • Functional Safety-Compliant
    • Developed for functional safety applications
    • Documentation available to aid ISO 26262 system design up to ASIL D
  • Integrated diagnostics:
    • Built in self-test (BIST) for protection comparators
    • Gate threshold voltage measurement for power device health monitoring
    • INP to transistor gate path integrity
    • Internal clock monitoring
    • Fault alarm and warning outputs (nFLT*)
    • ISO communication data integrity check
  • SPI based device reconfiguration, verification, supervision, and diagnosis
  • 100 kV/µs CMTI
  • Safety-related certifications:
    • 5-kVRMS isolation for 1 minute per UL1577 (planned)
    • Reinforced isolation 7070-VPK per DIN VDE 0884-11: 2017-01 (planned)
  • AEC-Q100 qualified with the following results:
    • Device temperature grade 1: -40°C to +125°C ambient operating temperature
    • Device HBM ESD classification level 2
    • Device CDM ESD classification level C4B

The UCC5880-Q1 device is an isolated, highly configurable adjustable slew-rate gate driver targeted to drive high power SiC MOSFETs and IGBTs in EV/HEV applications. Power transistor protections such as shunt resistor based over-current, over-temperature (PTC, NTC, or diode), and DESAT detection, including selectable soft turn-off or two-level soft turn-off during these faults. To further reduce the application size, the UCC5880-Q1 integrates an active Miller clamp, and an active gate pull-down while the driver is unpowered. An integrated 10-bit ADC enables monitoring of up to 2 analog inputs, VCC2, DESAT, and the gate driver temperature for enhanced system management. Diagnostics and detection functions are integrated to simplify the design of ASIL compliant systems. The parameters and thresholds for these features are configurable using the SPI, which allows the device to be used with nearly any SiC MOSFET or IGBT.

The UCC5880-Q1 device is an isolated, highly configurable adjustable slew-rate gate driver targeted to drive high power SiC MOSFETs and IGBTs in EV/HEV applications. Power transistor protections such as shunt resistor based over-current, over-temperature (PTC, NTC, or diode), and DESAT detection, including selectable soft turn-off or two-level soft turn-off during these faults. To further reduce the application size, the UCC5880-Q1 integrates an active Miller clamp, and an active gate pull-down while the driver is unpowered. An integrated 10-bit ADC enables monitoring of up to 2 analog inputs, VCC2, DESAT, and the gate driver temperature for enhanced system management. Diagnostics and detection functions are integrated to simplify the design of ASIL compliant systems. The parameters and thresholds for these features are configurable using the SPI, which allows the device to be used with nearly any SiC MOSFET or IGBT.
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Technical documentation

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Type Title Date
* Data sheet UCC5880-Q1 Isolated 20-A Adjustable Gate Drive IGBT/SiC MOSFET Gate Driver With Advanced Protection Features For Automotive Applications datasheet PDF | HTML 17 Oct 2022
Technical article How to maximize SiC traction inverter efficiency with real-time variable gate drive strength 08 May 2023
Certificate UCC5880INVERTEREVM EU RoHS Declaration of Conformity (DoC) 13 Mar 2023
White paper Design Priorities in EV Traction Inverter With Optimum Performance (Rev. A) PDF | HTML 08 Feb 2023
Technical article Improving safety in EV traction inverter systems 08 Dec 2022
Certificate UCC5880QEVM-057 EU RoHS Declaration of Conformity (DoC) 11 Nov 2022
White paper 具備最佳性能的 EV 牽引逆變器設計優先順序 PDF | HTML 27 Sep 2022
White paper 최적의성능을 갖춘 EV 트랙션 인버터에서 설계 우선 순위 PDF | HTML 27 Sep 2022
White paper Traction Inverters – A Driving Force Behind Vehicle Electrification PDF | HTML 08 Sep 2022
White paper 牽引逆變器 – 車輛電氣化背後的驅動力量 PDF | HTML 17 Aug 2022
White paper 트랙션 인버터 – 차량 전기화를 이끄는 동력 PDF | HTML 17 Aug 2022
Technical article Understanding functional safety for gate drivers and traction inverter systems 10 Aug 2022
Technical article Reducing power loss and thermal dissipation in SiC traction inverters 10 Jun 2022

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Evaluation board

UCC5880INVERTEREVM — UCC5880-Q1 evaluation module for variable isolated gate drive in traction inverters

The UCC5880INVERTEREVM board can be used standalone to test the UCC5880-Q1 driver with 100-nF capacitor load soldered on the board, or it can also be used to drive Wolfspeed XM3 SiC-based half-bridge power modules directly for high-power test. Two UCC14240-Q1 isolated bias supplies are included on (...)

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Evaluation board

UCC5880QEVM-057 — UCC5880-Q1 evaluation module for 20-A, isolated, adjustable IGBT/SiC MOSFET gate driver

The UCC5880-Q1 evaluation module is designed for evaluation of 20-A isolated single-channel gate driver with adjustable gate drive strength and advanced protection functions. This gate driver is targeted to drive high power SiC MOSFETs and IGBTs in EV/HEV applications. UCC5880-Q1 driver stage (...)

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Simulation tool

PSPICE-FOR-TI — PSpice® for TI design and simulation tool

PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)
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Reference designs

TIDM-02014 — High-power, high-performance automotive SiC traction inverter reference design

TIDM-02014 is a 800-V, 300kW SiC-based traction inverter system reference design developed by Texas Instruments and Wolfspeed provides a foundation for OEMs and design engineers to create high-performance, high-efficiency traction inverter systems and get to market faster. This solution (...)
Design guide: PDF
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SSOP (DFC) 32 View options
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