LMG3422R050

ACTIVE

600-V 50-mΩ GaN FET with integrated driver, protection and temperature reporting

Product details

VDS (max) (V) 600 RDS(on) (mΩ) 50 ID (max) (A) 44 Features Bottom-side cooled, Cycle-by-cycle overcurrent protection, Latched overcurrent protection, Overtemperature protection, PWM temperature reporting Rating Catalog Operating temperature range (°C) -40 to 150
VDS (max) (V) 600 RDS(on) (mΩ) 50 ID (max) (A) 44 Features Bottom-side cooled, Cycle-by-cycle overcurrent protection, Latched overcurrent protection, Overtemperature protection, PWM temperature reporting Rating Catalog Operating temperature range (°C) -40 to 150
VQFN (RQZ) 54 144 mm² 12 x 12
  • Qualified for JEDEC JEP180 for hard-switching topologies
  • 600V GaN-on-Si FET with integrated gate driver
    • Integrated high precision gate bias voltage
    • 200V/ns FET hold-off
    • 3.6MHz switching frequency
    • 20V/ns to 150V/ns slew rate for optimization of switching performance and EMI mitigation
    • Operates from 7.5V to 18V supply
  • Robust protection
    • Cycle-by-cycle overcurrent and latched short-circuit protection with < 100ns response
    • Withstands 720V surge while hard-switching
    • Self-protection from internal overtemperature and UVLO monitoring
  • Advanced power management
    • Digital temperature PWM output
    • LMG3426R050 includes zero-voltage detection (ZVD) feature that facilitates soft-switching converters
  • Qualified for JEDEC JEP180 for hard-switching topologies
  • 600V GaN-on-Si FET with integrated gate driver
    • Integrated high precision gate bias voltage
    • 200V/ns FET hold-off
    • 3.6MHz switching frequency
    • 20V/ns to 150V/ns slew rate for optimization of switching performance and EMI mitigation
    • Operates from 7.5V to 18V supply
  • Robust protection
    • Cycle-by-cycle overcurrent and latched short-circuit protection with < 100ns response
    • Withstands 720V surge while hard-switching
    • Self-protection from internal overtemperature and UVLO monitoring
  • Advanced power management
    • Digital temperature PWM output
    • LMG3426R050 includes zero-voltage detection (ZVD) feature that facilitates soft-switching converters

The LMG342xR050 GaN FET with integrated driver and protection is targeted at switch-mode power converters and enables designers to achieve new levels of power density and efficiency.

The LMG342xR050 integrates a silicon driver that enables switching speed up to 150V/ns. TI’s integrated precision gate bias results in higher switching SOA compared to discrete silicon gate drivers. This integration, combined with TI’s low-inductance package, delivers clean switching and minimal ringing in hard-switching power supply topologies. Adjustable gate drive strength allows control of the slew rate from 20V/ns to 150V/ns, which can be used to actively control EMI and optimize switching performance. The LMG3426R050 includes the zero-voltage detection (ZVD) feature which provides a pulse output from the ZVD pin when zero-voltage switching is realized.

Advanced power management features include digital temperature reporting and fault detection. The temperature of the GaN FET is reported through a variable duty cycle PWM output, which simplifies managing device loading. Faults reported include overcurrent, short-circuit, overtemperature, VDD UVLO, and high-impedance RDRV pin.

The LMG342xR050 GaN FET with integrated driver and protection is targeted at switch-mode power converters and enables designers to achieve new levels of power density and efficiency.

The LMG342xR050 integrates a silicon driver that enables switching speed up to 150V/ns. TI’s integrated precision gate bias results in higher switching SOA compared to discrete silicon gate drivers. This integration, combined with TI’s low-inductance package, delivers clean switching and minimal ringing in hard-switching power supply topologies. Adjustable gate drive strength allows control of the slew rate from 20V/ns to 150V/ns, which can be used to actively control EMI and optimize switching performance. The LMG3426R050 includes the zero-voltage detection (ZVD) feature which provides a pulse output from the ZVD pin when zero-voltage switching is realized.

Advanced power management features include digital temperature reporting and fault detection. The temperature of the GaN FET is reported through a variable duty cycle PWM output, which simplifies managing device loading. Faults reported include overcurrent, short-circuit, overtemperature, VDD UVLO, and high-impedance RDRV pin.

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Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Evaluation board

LMG342X-BB-EVM — LMG342x GaN system-level evaluation motherboard for LMG342x Family

The LMG342X-BB-EVM is an easy to use breakout board to configure any LMG342xR0x0 half bridge boards, such as the LMG3422EVM-043, as a synchronous buck converter. By providing a power stage, bias power and logic circuitry this EVM allows for quick measurements of the GaN device switching. This EVM (...)
User guide: PDF | HTML
Not available on TI.com
Daughter card

LMG3422EVM-041 — LMG3422R050 600-V 50-mΩ half-bridge daughter card

LMG3422EVM-041 configures two LMG3422R050 GaN FETs in a half-bridge with the latched over current protection function and all the necessary auxiliary peripheral circuitry. This EVM is designed to work in conjunction with larger systems.
User guide: PDF | HTML
Not available on TI.com
Simulation model

LMG3422R050 PSpice Model

SNOM780.ZIP (241 KB) - PSpice Model
CAD/CAE symbol

LMG3422R050 Step File

SNOR032.ZIP (411 KB)
Calculation tool

LMGXX-GAN-LLC-CALC GaN LLC resonant converter device loss calculator

Device Loss Calculator can be used to evaluate different devices for different topologies of the LLC Resonant Converter
lock = Requires export approval (1 minute)
Supported products & hardware

Supported products & hardware

Products
Gallium nitride (GaN) ICs
LMG2100R044 100-V 4.4-mΩ half-bridge GaN FET with integrated driver and protection LMG2610 650-V 170/248-mΩ GaN half-bridge for ACF with integrated driver, protection and current sense LMG3410R050 600-V 50-mΩ GaN with integrated driver and protection LMG3410R070 600-V 70mΩ GaN with integrated driver and protection LMG3410R150 600-V 150-mΩ GaN with integrated driver and overcurrent protection LMG3411R050 600-V 50mΩ GaN with integrated driver and cycle-by-cycle overcurrent protection LMG3411R070 600-V 70-mΩ GaN with integrated driver and cycle-by-cycle overcurrent protection LMG3411R150 600-V 150-mΩ GaN with integrated driver and cycle-by-cycle overcurrent protection LMG3422R030 600-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3422R050 600-V 50-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3425R030 600-V 30-mΩ GaN FET with integrated driver, protection, temperature reporting and ideal diode mode LMG3425R050 600-V 50-mΩ GaN FET with integrated driver, protection, temperature reporting and ideal diode mode LMG3522R030 650-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3522R030-Q1 Automotive 650-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3526R030 650-V 30-mΩ GaN FET with integrated driver, protection and zero-voltage detection LMG5200 80V GaN Half Bridge Power Stage
Calculation tool

SNOR030 GaN CCM Totem Pole PFC Power Loss Calculation Excel Sheet

Supported products & hardware

Supported products & hardware

Products
Gallium nitride (GaN) ICs
LMG3410R050 600-V 50-mΩ GaN with integrated driver and protection LMG3410R070 600-V 70mΩ GaN with integrated driver and protection LMG3410R150 600-V 150-mΩ GaN with integrated driver and overcurrent protection LMG3411R050 600-V 50mΩ GaN with integrated driver and cycle-by-cycle overcurrent protection LMG3411R070 600-V 70-mΩ GaN with integrated driver and cycle-by-cycle overcurrent protection LMG3411R150 600-V 150-mΩ GaN with integrated driver and cycle-by-cycle overcurrent protection LMG3422R030 600-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3422R050 600-V 50-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3522R030 650-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3522R030-Q1 Automotive 650-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3526R030 650-V 30-mΩ GaN FET with integrated driver, protection and zero-voltage detection
Simulation tool

PSPICE-FOR-TI — PSpice® for TI design and simulation tool

PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)
Reference designs

TIDA-010062 — 1-kW, 80+ titanium, GaN CCM totem pole bridgeless PFC and half-bridge LLC with LFU reference design

This reference design is a digitally controlled, compact 1-kW AC/DC power supply design for server power supply unit (PSU) and telecom rectifier applications. This highly efficient design supports two main power stages, including a front-end continuous conduction mode (CCM) totem-pole bridgeless (...)
Design guide: PDF
Schematic: PDF
Reference designs

PMP41017 — 3kW two-phase interleaved half-bridge LLC reference design with GaN and C2000™ MCU

This reference design is a 3-kW, two-phase, interleaved half-bridge inductor-inductor-capacitor (LLC) using the LMG3422 and F280039C devices. This design can achieve 98.1% peak efficiency and 313 W / in³ power density and can be used as the output stage of a common redundant power supply (...)
Test report: PDF
Reference designs

PMP41043 — 1.6-kW reference design with CCM totem pole PFC and current-mode LLC realized by C2000 and GaN

This reference design demonstrates a hybrid hysteresis control (HHC) method, a current mode control method on half-bridge LLC stage with a C2000 F28004x microcontroller. The hardware is based on TIDA-010062 which is 1-kW, 80 Plus titanium, GaN CCM totem pole bridgeless PFC and half-bridge LLC (...)
Test report: PDF
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VQFN (RQZ) 54 View options

Ordering & quality

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