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Product details

Parameters

Number of channels (#) 1 Isolation rating (Vrms) 5700 Power switch IGBT, SiCFET Peak output current (A) 10 DIN V VDE V 0884-10 transient overvoltage rating (Vpk) 8400 DIN V VDE V 0884-10 working voltage (Vpk) 2121 Output VCC/VDD (Max) (V) 33 Output VCC/VDD (Min) (V) 13 Input VCC (Min) (V) 3 Input VCC (Max) (V) 5.5 Prop delay (ns) 90 Operating temperature range (C) -40 to 125 open-in-new Find other Isolated gate drivers

Package | Pins | Size

SOIC (DW) 16 77 mm² 10.3 x 7.5 open-in-new Find other Isolated gate drivers

Features

  • 5.7-kVRMS single channel isolated gate driver
  • AEC-Q100 qualified for automotive applications
  • SiC MOSFETs and IGBTs up to 2121Vpk
  • 33-V maximum output drive voltage (VDD-VEE)
  • ±10-A drive strength and split output
  • 150-V/ns minimum CMTI
  • 270ns response time fast overcurrent protection
  • 4-A internal active miller clamp
  • 400mA soft turn-off when fault happens
  • Isolated analog sensor with PWM output for
    • Temperature sensing with NTC, PTC or thermal diode
    • High voltage DC-Link or phase voltage
  • Alarm FLT on over current and reset from RST/EN
  • Fast enable/disable response on RST/EN
  • Reject <40ns noise transient and pulse on input pins
  • 12V VDD UVLO with power good on RDY
  • Inputs/outputs with over/under-shoot transient voltage Immunity up to 5 V
  • 130-ns (maximum) propagation delay and 30-ns (maximum) pulse/part skew
  • SOIC-16 DW package with creepage and clearance distance > 8mm
  • Operating junction temperature –40°C to 150°C

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Description

The UCC21710-Q1 is a galvanic isolated single channel gate driver designed for up to 1700V SiC MOSFETs and IGBTs with advanced protection features, best-in-class dynamic performance and robustness. UCC21710-Q1 has up to ±10-A peak source and sink current.

The input side is isolated from the output side with SiO2 capacitive isolation technology, supporting up to 1.5-kVRMS working voltage, 12.8-kVPK surge immunity with longer than 40 years Isolation barrier life, as well as providing low part-to-part skew, and >150V/ns common mode noise immunity (CMTI).

The UCC21710-Q1 includes the state-of-art protection features, such as fast overcurrent and short circuit detection, shunt current sensing support, fault reporting, active miller clamp, and input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The isolated analog to PWM sensor can be utilized for easier temperature or voltage sensing, further increasing the drivers’ versatility and simplifying the system design effort, size and cost.

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Technical documentation

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Type Title Date
* Datasheet UCC21710-Q1 10-A Source/Sink Reinforced Isolated Single Channel Gate Driver for SiC/IGBT with Active Protection, Isolated Analog Sensing and High-CMTI datasheet (Rev. B) Dec. 13, 2019
Application notes Understanding the Short Circuit Protection for Silicon Carbide MOSFETs (Rev. B) May 13, 2020
White papers Ein Techniker-Leitfaden für Industrieroboter-Designs Mar. 25, 2020
White papers E-book: An engineer’s guide to industrial robot designs Feb. 12, 2020
Application notes Performance of the Analog PWM Channel in Smart Gate Drivers Jan. 16, 2020
User guides SiC/IGBT Isolated Gate Driver Reference Design With Thermal Diode and Sensing Dec. 18, 2019
User guides UCC217xx Family Driving and Protecting SiC and IGBT Power Modules and Transistor (Rev. B) Sep. 09, 2019
Application notes HEV/EV Traction Inverter Design Guide Using Isolated IGBT and SiC Gate Drivers May 02, 2019
Application notes Why is high UVLO important for safe IGBT & SiC MOSFET power switch operation Jan. 30, 2019
Technical articles How to achieve higher system robustness in DC drives, part 3: minimum input pulse Sep. 19, 2018
Technical articles How to achieve higher system robustness in DC drives, part 2: interlock and deadtime May 30, 2018
Technical articles Boosting efficiency for your solar inverter designs May 24, 2018
Technical articles How to achieve higher system robustness in DC drives, part 1: negative voltage Apr. 17, 2018

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Hardware development

EVALUATION BOARDS Download
document-generic User guide
$199.00
Description
The UCC21710QDWEVM-025 is a compact, single channel isolated gate driver board providing drive, bias voltages, protection and diagnostic needed for SiC MOSFET and Si IGBT Power Modules housed in 150 x 62 x 17 mm and 106 x 62 x 30 mm packages. This TI EVM is based on 5.7-kVrms reinforced isolation (...)
Features
  • 10-A peak, split output drive current with programmable drive voltages
  • Two 5.7-kVrms reinforced isolated channels to support up to 1700 V input rail
  • Short circuit protection with soft turn OFF and Miller clamp with internal FET
  • Robust noise-immune solution with CMTI > 100 V/ns

Software development

SUPPORT SOFTWARE Download
SLUC695.ZIP (1108 KB)

Design tools & simulation

SIMULATION MODELS Download
SLUM679.ZIP (89 KB) - PSpice Model
SIMULATION MODELS Download
SLUM716.ZIP (6 KB) - PSpice Model
SIMULATION MODELS Download
SLUM723.ZIP (6 KB) - PSpice Model

CAD/CAE symbols

Package Pins Download
SOIC (DW) 16 View options

Ordering & quality

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