Overview for Isolated Gate Driver

Texas Instruments offers highly robust, flexible and universally compatible isolated gate driver families for use in low-side, high-side, high-side/low-side or half-bridge motor control and power management designs. With TI’s capacitive isolation technique, these drivers achieve up to 5.7 kVRMS isolation along with short propagation delays making them the highest isolation rated and fastest isolated gate drivers for driving MOSFETS, Silicon Carbide (SiC MOSFETS) and IGBTs. With its integrated components, advanced protection features and optimized switching performance, these families enable designers to build smaller, more robust designs for industrial, automotive, enterprise and telecommunications applications.

Single-Channel Reinforced Gate Drivers

  • Reinforced Isolation up to 5.7 kVrms
  • Minimum CMTI of 100 kV/us
  • DESAT, soft turn off, Miller Clamp options
  • Split output option
  • 2.25 - 5.5 V wide input range
  • 15 - 30 V wide output range

Dual-Channel Reinforced Gate Drivers

  • Reinforced Isolation up to 5.7 kVrms
  • Minimum CMTI of 100 kV/us
  • Minimum prop delay of 19 ns Typical propagation delay
  • Channel-to-channel isolation of 1.5 kVrms
  • 3 - 18 V wide input range
  • 6.5 - 30 V wide output range

Learn more

Read gate driver and isolation blogs