INA828 50-μV Offset, 7-nV/√Hz Noise, Low-Power, Precision Instrumentation Amplifier | TI.com

INA828 (ACTIVE) 50-μV Offset, 7-nV/√Hz Noise, Low-Power, Precision Instrumentation Amplifier

 

Recommended alternative parts

  • INA821  -  Higher precision (35µV max, 0.4µV/C max drift) and higher bandwith (4.7MHz)

Description

The INA828 is a high-precision instrumentation amplifier that offers low power consumption and operates over a very wide single- or dual-supply range. A single external resistor sets any gain from 1 to 1000. The device offers excellent precision due to the use of new super-beta input transistors which provide exceptionally low input offset voltage, offset voltage drift, input bias current, and input voltage and current noise. Additional circuitry protects the inputs against overvoltage up to ±40 V.

The INA828 is optimized to provide excellent common-mode rejection ratio. At G = 1, the common-mode rejection ratio exceeds 90 dB across the full input common-mode range. The device is well-suited for low-voltage operation from a 5-V single supply as well as dual supplies up to ±18 V. Finally, INA828 is available in an 8-pin SOIC package and specified over the –40°C to +125°C temperature range.

Features

  • Precision Instrumentation Amplifier Evolution:
    • Second Generation: INA828
    • First Generation: INA128
  • Low Offset Voltage: 50 µV, MAX
  • Gain Drift: 5 ppm/°C (G = 1), 50 ppm/°C (G > 1)
  • Noise: 7 nV/√Hz
  • Bandwidth: 2 MHz (G = 1), 260 kHz (G = 100)
  • Stable with 1-nF Capacitive Loads
  • Inputs Protected Up to ±40 V
  • Common-Mode Rejection:
    • 110 dB, MIN (G = 10)
  • Power-Supply Rejection: 100 dB, MIN (G = 1)
  • Supply Current: 650 µA, MAX
  • Supply Range:
    • Single Supply: 4.5 V to 36 V
    • Dual Supply: ±2.25 V to ±18 V
  • Specified Temperature Range:
    –40°C to +125°C
  • Package: 8-Pin SOIC

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Parametrics

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Part number Order Number of channels (#) Vs (Min) (V) Vs (Max) (V) CMRR (Min) (dB) Input offset (+/-) (Max) (uV) Input offset drift (+/-) (Max) (uV/C) Input bias current (+/-) (Max) (nA) Noise at 1 kHz (Typ) (nV/rt (Hz)) Iq (Typ) (mA) Bandwidth at min gain (Typ) (MHz) Gain (Min) (V/V) Gain (Max) (V/V) Gain error (+/-) (Max) (%) Operating temperature range (C) Package Group Package size: mm2:W x L (PKG) Noise at 0.1 Hz-10 Hz (Typ) (uVpp) Gain non-linearity (+/-) (Max) (%)
INA828 Order now 1     4.5     36     140     50     0.5     0.6     7     0.6     2     1     1000     0.15     -40 to 125     SOIC | 8     8SOIC: 19 mm2: 3.91 x 4.9 (SOIC | 8)     0.14     0.001    
INA118 Order now 1     2.7     36     107     50     0.5     5     10     0.35     0.8     1     10000     1     -40 to 85     PDIP | 8
SOIC | 8    
8PDIP: 93 mm2: 9.43 x 9.81 (PDIP | 8)
8SOIC: 19 mm2: 3.91 x 4.9 (SOIC | 8)    
0.28     0.002    
INA128 Order now 1     4.5     36     120     50     0.5     5     8     0.7     1.3     1     10000     2     -40 to 125     PDIP | 8
SOIC | 8    
8PDIP: 93 mm2: 9.43 x 9.81 (PDIP | 8)
8SOIC: 19 mm2: 3.91 x 4.9 (SOIC | 8)    
0.2     0.012    
INA188 Order now 1     4     36     118     55     0.2     2.5     12.5     1.4     0.6     1     1000     0.5     -40 to 125     SOIC | 8
SON | 8    
8SOIC: 19 mm2: 3.91 x 4.9 (SOIC | 8)
8SON: 16 mm2: 4 x 4 (SON | 8)    
0.25      
INA818 Order now 1     4.5     36     140     35     0.4     0.5     8     0.35     2