The OPA818 is a decompensated (gain = 7 V/V stable), voltage-feedback operational amplifier with a low-noise junction gate field-effect transistor (JFET) input stage that combines high gain-bandwidth with a wide supply range from 6 V to 13 V for high-speed and wide dynamic range applications. This amplifier is manufactured using Texas Instruments proprietary, high-speed, silicon-germanium (SiGe) process to achieve significant performance improvements over other high-speed, FET-input amplifiers. A fast slew rate (1400 V/µs) provides high large-signal bandwidth and low distortion.
The 2.7-GHz gain-bandwidth, low 2.4-pF total input capacitance, and 2.2 nV/√Hz of noise makes the OPA818 an extremely versatile, wideband TIA photodiode amplifier for use in optical test and communication equipment, and many medical, scientific, and industrial instruments. The OPA818 can achieve over 85-MHz signal bandwidth in TIA configuration with 20-kΩ TIA gain (RF) and 0.5-pF photodiode capacitance (CD) with wide output swings. The decompensated, low-noise architecture with pico amperes of input bias current is also well-suited for high-gain test and measurement applications that have variable or high source impedance. Though normally stable in gains ≥ 7 V/V, the OPA818 can be used in applications with lower gains by applying noise-gain shaping techniques.
The OPA818 is available in an 8-lead WSON package with an exposed thermal pad for heat dissipation. This device is specified to operate over the industrial temperature range of –40°C to +85°C.
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|Part number||Order||Architecture||Number of channels (#)||Total supply voltage (Min) (+5V=5, +/-5V=10)||Total supply voltage (Max) (+5V=5, +/-5V=10)||BW @ Acl (MHz)||Acl, min spec gain (V/V)||Slew rate (Typ) (V/us)||Vn at flatband (Typ) (nV/rtHz)||Vn at 1 kHz (Typ) (nV/rtHz)||Iq per channel (Typ) (mA)||Vos (offset voltage @ 25 C) (Max) (mV)||Rail-to-rail||Features||Rating||Operating temperature range (C)||Package Group||Package size: mm2:W x L (PKG)||CMRR (Typ) (dB)||Input bias current (Max) (pA)||Offset drift (Typ) (uV/C)||GBW (Typ) (MHz)||Output current (Typ) (mA)||2nd harmonic (dBc)||3rd harmonic (dBc)||@ MHz|
FET / CMOS Input
|1||6||13||790||7||1400||2.2||8.5||27.7||1.25||No||Decompensated||Catalog||-40 to 125||SON | 8||8SON: 9 mm2: 3 x 3 (SON | 8)||90||20||3||2700||60||-90||-96||1|
FET / CMOS Input
|1||8||12||350||7||700||4.8||7||14||1.8||No||Decompensated||Catalog||-40 to 85||
SOIC | 8
SOT-23 | 5
8SOIC: 19 mm2: 3.91 x 4.9 (SOIC | 8)
5SOT-23: 5 mm2: 1.6 x 2.9 (SOT-23 | 5)