SPRSPA1B March 2025 – November 2025 AM62L
PRODUCTION DATA
Refer to the PDF data sheet for device specific package drawings
The Error Location Module (ELM) operates in conjunction with the General-Purpose Memory Controller (GPMC) to support error detection and correction for NAND flash memories. It processes syndrome polynomials generated during NAND page reads using a Bose–Chaudhuri–Hocquenghem (BCH) algorithm to identify error locations within a data block. The ELM supports 4-, 8-, and 16-bit error correction per 512-byte block, with interrupt generation upon completion and register-based access to error count and location data.
For more information, see Error Location Module (ELM) section in Peripherals chapter in the device TRM.