SPRSPA1B March 2025 – November 2025 AM62L
PRODUCTION DATA
Refer to the PDF data sheet for device specific package drawings
Table 6-83, Figure 6-75, Table 6-84, and Figure 6-76 present timing requirements and switching characteristics for MMC0 – High Speed DDR Mode.
| NO. | IO Operating Voltage |
MIN | MAX | UNIT | ||
|---|---|---|---|---|---|---|
| HSDDR1 | tsu(cmdV-clk) | Setup time, MMC0_CMD valid before MMC0_CLK rising edge | 1.8V | 0.02 | ns | |
| 3.3V | 1.5 | ns | ||||
| HSDDR2 | th(clk-cmdV) | Hold time, MMC0_CMD valid after MMC0_CLK rising edge | 1.8V | 1.99 | ns | |
| 3.3V | 1.75 | ns | ||||
| HSDDR3 | tsu(dV-clk) | Setup time, MMC0_DAT[7:0] valid before MMC0_CLK transition | 1.8V | 0.02 | ns | |
| 3.3V | 1.5 | ns | ||||
| HSDDR4 | th(clk-dV) | Hold time, MMC0_DAT[7:0] valid after MMC0_CLK transition | 1.8V | 1.99 | ns | |
| 3.3V | 1.75 | ns | ||||
Figure 6-75 MMC0 – High Speed
DDR Mode – Receive Mode| NO. | PARAMETER | IO Operating Voltage |
MIN | MAX | UNIT | |
|---|---|---|---|---|---|---|
| fop(clk) | Operating frequency, MMC0_CLK | 40 | MHz | |||
| HSDDR5 | tc(clk) | Cycle time, MMC0_CLK | 25 | ns | ||
| HSDDR6 | tw(clkH) | Pulse duration, MMC0_CLK high | 11.58 | ns | ||
| HSDDR7 | tw(clkL) | Pulse duration, MMC0_CLK low | 11.58 | ns | ||
| HSDDR8 | td(clk-cmdV) | Delay time, MMC0_CLK rising edge to MMC0_CMD transition | 1.8V | 1.2 | 5.6 | ns |
| 3.3V | 3.32 | 9.3 | ns | |||
| HSDDR9 | td(clk-dV) | Delay time, MMC0_CLK transition to MMC0_DAT[7:0] transition | 1.8V | 1.2 | 4.8 | ns |
| 3.3V | 3.2 | 8.9 | ns | |||
Figure 6-76 MMC0 – High Speed
DDR Mode – Transmit Mode