CSD87503Q3E
30-V, N channel NexFET™ power MOSFET, dual common source SON 3 mm x 3 mm, 21.9 mOhm
CSD87503Q3E
- Dual N-Ch Common Source MOSFETs
- Optimized for 5-V Gate Drive
- Low-Thermal Resistance
- Low Qg and Qgd
- Lead-Free Terminal Plating
- RoHS Compliant
- Halogen Free
- SON 3.3-mm × 3.3-mm Plastic Package
The CSD87503Q3E is a 30-V, 13.5-mΩ, common source, dual N-channel device designed for USB Type-C/PD and battery protection. This SON 3.3 × 3.3 mm device has low drain-to-drain on-resistance that minimizes losses and offers low component count for space constrained applications.
Technical documentation
Type | Title | Date | ||
---|---|---|---|---|
* | Data sheet | CSD87503Q3E 30-V N-Channel NexFET™ Power MOSFETs datasheet | PDF | HTML | 13 Sep 2017 |
Application note | QFN and SON PCB Attachment (Rev. C) | PDF | HTML | 06 Dec 2023 | |
Application note | MOSFET Support and Training Tools (Rev. C) | PDF | HTML | 22 Nov 2023 | |
Application note | Using MOSFET Safe Operating Area Curves in Your Design | PDF | HTML | 13 Mar 2023 | |
Application note | Tips for Successfully Paralleling Power MOSFETs | PDF | HTML | 31 May 2022 | |
Application note | Semiconductor and IC Package Thermal Metrics (Rev. C) | PDF | HTML | 19 Apr 2016 | |
Application note | Ringing Reduction Techniques for NexFET High Performance MOSFETs | 16 Nov 2011 |
Design & development
For additional terms or required resources, click any title below to view the detail page where available.
SYNC-BUCK-FET-LOSS-CALC — Power Loss Calculation Tool for Synchronous Buck Converter
Supported products & hardware
Products
Power blocks
N-channel MOSFETs
Package | Pins | Download |
---|---|---|
VSON (DTD) | 8 | View options |
Ordering & quality
- RoHS
- REACH
- Device marking
- Lead finish/Ball material
- MSL rating/Peak reflow
- MTBF/FIT estimates
- Material content
- Qualification summary
- Ongoing reliability monitoring
Recommended products may have parameters, evaluation modules or reference designs related to this TI product.
Support & training
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