The CSD87503Q3E is a 30-V, 13.5-mΩ, common source, dual N-channel device designed for USB Type-C/PD and battery protection. This SON 3.3 × 3.3 mm device has low drain-to-drain on-resistance that minimizes losses and offers low component count for space constrained applications.
| Top documentation | Type | Title | Format options | Date |
|---|---|---|---|---|
| * | Data sheet | CSD87503Q3E 30-V N-Channel NexFET™ Power MOSFETs datasheet | PDF | HTML | Sep 13, 2017 |
| Application brief | Estimating Leakage Currents of Power MOSFETs | PDF | HTML | Oct 31, 2025 | |
| Application note | MOSFET Support and Training Tools (Rev. G) | PDF | HTML | Oct 27, 2025 | |
| Application note | Semiconductor and IC Package Thermal Metrics (Rev. D) | PDF | HTML | Mar 25, 2024 | |
| Application note | Using MOSFET Transient Thermal Impedance Curves In Your Design | PDF | HTML | Dec 18, 2023 | |
| Application note | QFN and SON PCB Attachment (Rev. C) | PDF | HTML | Dec 6, 2023 | |
| Application note | Using MOSFET Safe Operating Area Curves in Your Design | PDF | HTML | Mar 13, 2023 | |
| Application brief | Tips for Successfully Paralleling Power MOSFETs | PDF | HTML | May 31, 2022 | |
| Application note | Ringing Reduction Techniques for NexFET High Performance MOSFETs | Nov 16, 2011 |
For additional terms or required resources, click any title below to view the detail page where available.
| Package | Pins | CAD symbols, footprints & 3D models |
|---|---|---|
| VSON (DTD) | 8 | Ultra Librarian |
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