This 100 V, 4 mΩ, SON 5-mm × 6-mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
| Type | Title | Date | |
|---|---|---|---|
| * | Data sheet | CSD19532Q5B 100 V N-Channel NexFET Power MOSFET datasheet (Rev. B) | 13 Jun 2017 |
| Technical article | What’s not in the power MOSFET data sheet, part 1: temperature dependency | 30 Dec 2020 | |
| Technical article | Understanding the benefits of “lead-free” power MOSFETs | 08 Feb 2019 | |
| Application note | QFN and SON PCB Attachment (Rev. B) | 24 Aug 2018 | |
| Technical article | How to select a MOSFET - Hot Swap | 06 Apr 2018 | |
| Technical article | When to use load switches in place of discrete MOSFETs | 03 Feb 2016 | |
| Application note | Ringing Reduction Techniques for NexFET High Performance MOSFETs | 16 Nov 2011 |
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The BQ76942EVM evaluation module (EVM) is a complete evaluation system for the BQ76942, a 3-cell to 10-cell Li-Ion battery monitor integrated circuit. The EVM consists of a BQ76942 circuit module which is used for simple evaluation of the BQ76942 monitor function. The circuit module includes one (...)
The DRV8353RH-EVM is a 15A, 3-phase brushless DC drive stage based on the DRV8353RH gate driver and CSD19532Q5B NexFET™ MOSFETs.
The module has individual DC bus and phase voltage sense as well as individual low-side current shunt amplifiers, making this evaluation module ideal for sensorless BLDC (...)
The DRV8353RS-EVM is a 15A, 3-phase brushless DC drive stage based on the DRV8353RS gate driver and CSD19532Q5B NexFET™ MOSFETs.
The module has individual DC bus and phase voltage sense as well as individual low-side current shunt amplifiers, making this evaluation module ideal for sensorless BLDC (...)
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| Package | Pins | Download |
|---|---|---|
| (DNK) | 8 | View options |
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