100-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 4.9 mOhm
Product details
Parameters
Features
- Low Qg and Qgd
- Low Thermal Resistance
- Avalanche Rated
- Pb-Free Terminal Plating
- RoHS Compliant
- Halogen Free
- SON 5-mm × 6-mm Plastic Package
All trademarks are the property of their respective owners.
Description
This 100 V, 4 mΩ, SON 5-mm × 6-mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
Technical documentation
Type | Title | Date | |
---|---|---|---|
* | Datasheet | CSD19532Q5B 100 V N-Channel NexFET Power MOSFET datasheet (Rev. B) | Jun. 13, 2017 |
Technical articles | What’s not in the power MOSFET data sheet, part 1: temperature dependency | Dec. 30, 2020 | |
Technical articles | Understanding the benefits of “lead-free” power MOSFETs | Feb. 07, 2019 | |
Application note | QFN and SON PCB Attachment (Rev. B) | Aug. 24, 2018 | |
Technical articles | How to select a MOSFET - Hot Swap | Apr. 06, 2018 | |
Technical articles | When to use load switches in place of discrete MOSFETs | Feb. 03, 2016 | |
Application note | Ringing Reduction Techniques for NexFET High Performance MOSFETs | Nov. 16, 2011 |
Design & development
For additional terms or required resources, click any title below to view the detail page where available.Hardware development
Description
The BQ76942EVM evaluation module (EVM) is a complete evaluation system for the BQ76942, a 3-cell to 10-cell Li-Ion battery monitor integrated circuit. The EVM consists of a BQ76942 circuit module which is used for simple evaluation of the BQ76942 monitor function. The circuit module includes one (...)
Features
- Complete evaluation system for the BQ76942 3-cell to 10-cell Li-Ion and Phosphate battery monitor
- Populated circuit module for 10-cell configuration for quick setup
- Communication available with included USB interface adapter or available on 4-pin connector
- Resistor cell simulator for operation with (...)
Description
The DRV8353RH-EVM is a 15A, 3-phase brushless DC drive stage based on the DRV8353RH gate driver and CSD19532Q5B NexFET™ MOSFETs.
The module has individual DC bus and phase voltage sense as well as individual low-side current shunt amplifiers, making this evaluation module ideal for sensorless BLDC (...)
Features
- 9- to 95-V operation
- 15 A continuous / 20 A peak H-bridge output current
- Internal buck regulator
- Three individual, internal low-side current shunt amplifiers
- INSTASPIN FOC firmware available
Description
The DRV8353RS-EVM is a 15A, 3-phase brushless DC drive stage based on the DRV8353RS gate driver and CSD19532Q5B NexFET™ MOSFETs.
The module has individual DC bus and phase voltage sense as well as individual low-side current shunt amplifiers, making this evaluation module ideal for sensorless BLDC (...)
Features
- 9- to 95-V operation
- 15 A continuous / 20 A peak H-bridge output current
- Internal buck regulator
- Three individual, internal low-side current shunt amplifiers
- INSTASPIN FOC firmware available
Software development
Design tools & simulation
Features
- Calculates power loss for TI MOSFETs
Features
- Calculates power loss for TI MOSFETs
Features
- Calculates power loss for TI MOSFETs
Reference designs
CAD/CAE symbols
Package | Pins | Download |
---|---|---|
(DNK) | 8 | View options |
Ordering & quality
- RoHS
- REACH
- Device marking
- Lead finish/Ball material
- MSL rating/Peak reflow
- MTBF/FIT estimates
- Material content
- Qualification summary
- Ongoing reliability monitoring
Recommended products may have parameters, evaluation modules or reference designs related to this TI product.
Support & training
TI E2E™ forums with technical support from TI engineers
Content is provided "as is" by TI and community contributors and does not constitute TI specifications. See terms of use.
If you have questions about quality, packaging or ordering TI products, see TI support.