100-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 4.9 mOhm
Product details
Parameters
Features
- Low Qg and Qgd
- Low Thermal Resistance
- Avalanche Rated
- Pb-Free Terminal Plating
- RoHS Compliant
- Halogen Free
- SON 5-mm × 6-mm Plastic Package
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Description
This 100 V, 4 mΩ, SON 5-mm × 6-mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
Technical documentation
| Type | Title | Date | |
|---|---|---|---|
| * | Data sheet | CSD19532Q5B 100 V N-Channel NexFET Power MOSFET datasheet (Rev. B) | Jun. 13, 2017 |
| Technical article | What’s not in the power MOSFET data sheet, part 1: temperature dependency | Dec. 30, 2020 | |
| Technical article | Understanding the benefits of “lead-free” power MOSFETs | Feb. 08, 2019 | |
| Application note | QFN and SON PCB Attachment (Rev. B) | Aug. 24, 2018 | |
| Technical article | How to select a MOSFET - Hot Swap | Apr. 06, 2018 | |
| Technical article | When to use load switches in place of discrete MOSFETs | Feb. 03, 2016 | |
| Application note | Ringing Reduction Techniques for NexFET High Performance MOSFETs | Nov. 16, 2011 |
Design & development
For additional terms or required resources, click any title below to view the detail page where available.Hardware development
Description
The BQ76942EVM evaluation module (EVM) is a complete evaluation system for the BQ76942, a 3-cell to 10-cell Li-Ion battery monitor integrated circuit. The EVM consists of a BQ76942 circuit module which is used for simple evaluation of the BQ76942 monitor function. The circuit module includes one (...)
Features
- Complete evaluation system for the BQ76942 3-cell to 10-cell Li-Ion and Phosphate battery monitor
- Populated circuit module for 10-cell configuration for quick setup
- Communication available with included USB interface adapter or available on 4-pin connector
- Resistor cell simulator for operation with (...)
Description
The DRV8353RH-EVM is a 15A, 3-phase brushless DC drive stage based on the DRV8353RH gate driver and CSD19532Q5B NexFET™ MOSFETs.
The module has individual DC bus and phase voltage sense as well as individual low-side current shunt amplifiers, making this evaluation module ideal for sensorless BLDC (...)
Features
- 9- to 95-V operation
- 15 A continuous / 20 A peak H-bridge output current
- Internal buck regulator
- Three individual, internal low-side current shunt amplifiers
- INSTASPIN FOC firmware available
Description
The DRV8353RS-EVM is a 15A, 3-phase brushless DC drive stage based on the DRV8353RS gate driver and CSD19532Q5B NexFET™ MOSFETs.
The module has individual DC bus and phase voltage sense as well as individual low-side current shunt amplifiers, making this evaluation module ideal for sensorless BLDC (...)
Features
- 9- to 95-V operation
- 15 A continuous / 20 A peak H-bridge output current
- Internal buck regulator
- Three individual, internal low-side current shunt amplifiers
- INSTASPIN FOC firmware available
Software development
Design tools & simulation
Features
- Calculates power loss for TI MOSFETs
Features
- Calculates power loss for TI MOSFETs
Features
- Calculates power loss for TI MOSFETs
Reference designs
CAD/CAE symbols
| Package | Pins | Download |
|---|---|---|
| (DNK) | 8 | View options |
Ordering & quality
- RoHS
- REACH
- Device marking
- Lead finish/Ball material
- MSL rating/Peak reflow
- MTBF/FIT estimates
- Material content
- Qualification summary
- Ongoing reliability monitoring
Recommended products may have parameters, evaluation modules or reference designs related to this TI product.
Support & training
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