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CSD86311W1723

ACTIVE

25-V, N channel NexFET™ power MOSFET, dual common source WLP1.7 mm x 2.3 mm, 42 mOhm

CSD86311W1723

ACTIVE

Product details

VDS (V) 25 VGS (V) 10 Type N-channel Configuration Dual Common Source Rds(on) at VGS=4.5 V (max) (mΩ) 42 Rds(on) at VGS=2.5 V (max) (mΩ) 50 VGSTH typ (typ) (V) 1 QG (typ) (nC) 3.1 QGD (typ) (nC) 0.33 QGS (typ) (nC) 0.85 ID - silicon limited at TC=25°C (A) 4.5 ID - package limited (A) 4.5 Logic level Yes Rating Catalog Operating temperature range (°C) -55 to 150
VDS (V) 25 VGS (V) 10 Type N-channel Configuration Dual Common Source Rds(on) at VGS=4.5 V (max) (mΩ) 42 Rds(on) at VGS=2.5 V (max) (mΩ) 50 VGSTH typ (typ) (V) 1 QG (typ) (nC) 3.1 QGD (typ) (nC) 0.33 QGS (typ) (nC) 0.85 ID - silicon limited at TC=25°C (A) 4.5 ID - package limited (A) 4.5 Logic level Yes Rating Catalog Operating temperature range (°C) -55 to 150
DSBGA (YZG) 12 3.9375 mm² 2.25 x 1.75
  • Dual N-Ch MOSFETs
  • Common Source Configuration
  • Small Footprint 1.7 mm × 2.3 mm
  • Ultra Low Qg and Qgd
  • Pb Free
  • RoHS Compliant
  • Halogen Free
  • APPLICATIONS
    • Battery Management
    • Battery Protection
    • DC-DC Converters

  • Dual N-Ch MOSFETs
  • Common Source Configuration
  • Small Footprint 1.7 mm × 2.3 mm
  • Ultra Low Qg and Qgd
  • Pb Free
  • RoHS Compliant
  • Halogen Free
  • APPLICATIONS
    • Battery Management
    • Battery Protection
    • DC-DC Converters

The device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with thermal characteristics in an ultra low profile. Low on resistance and gate charge coupled with the small footprint and low profile make the device ideal for battery operated space constrained application in load management as well as DC-DC converter applications

The device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with thermal characteristics in an ultra low profile. Low on resistance and gate charge coupled with the small footprint and low profile make the device ideal for battery operated space constrained application in load management as well as DC-DC converter applications

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Technical documentation

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Top documentation Type Title Format options Date
* Data sheet Dual N-Channel NexFET Power MOSFET datasheet 04 May 2010
Application brief Estimating Leakage Currents of Power MOSFETs PDF | HTML 31 Oct 2025
Application note MOSFET Support and Training Tools (Rev. G) PDF | HTML 27 Oct 2025
Application note Avoid Common Mistakes When Selecting And Designing With Power MOSFETs PDF | HTML 06 Nov 2024
Application note Semiconductor and IC Package Thermal Metrics (Rev. D) PDF | HTML 25 Mar 2024
Application note Using MOSFET Transient Thermal Impedance Curves In Your Design PDF | HTML 18 Dec 2023
Application note Solving Assembly Issues with Chip Scale Power MOSFETs PDF | HTML 14 Dec 2023
Application note Using MOSFET Safe Operating Area Curves in Your Design PDF | HTML 13 Mar 2023
Application brief Tips for Successfully Paralleling Power MOSFETs PDF | HTML 31 May 2022
More literature WCSP Handling Guide 07 Nov 2019
Application note AN-1112 DSBGA Wafer Level Chip Scale Package (Rev. AI) 14 Jun 2019
Selection guide Power Management Guide 2018 (Rev. R) 25 Jun 2018

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Support software

NONSYNC-BOOST-FET-LOSS-CALC NONSYNC BOOST FET LOSS Calculator

MOSFET power loss calculator for non-synchronous boost converter
Supported products & hardware

Supported products & hardware

Simulation model

CSD86311W1723 Unencrypted PSpice Model (Rev. A)

SLLM124A.ZIP (8 KB) - PSpice Model
Calculation tool

SYNC-BUCK-FET-LOSS-CALC Power Loss Calculation Tool for Synchronous Buck Converter

Quickly trade off size, cost and performance to select the optimal MOSFET based on application conditions.
Supported products & hardware

Supported products & hardware

Package Pins CAD symbols, footprints & 3D models
DSBGA (YZG) 12 Ultra Librarian

Ordering & quality

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Information included:
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