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Product details

Parameters

VDS (V) 60 Configuration Single Rds(on) max at VGS=4.5 V (mOhms) 12.4 Rds(on) max at VGS=10 V (mOhms) 9.8 IDM, max pulsed drain current (Max) (A) 229 QG typ (nC) 17 QGD typ (nC) 3.5 Package (mm) SON5x6 VGS (V) 20 VGSTH typ (V) 1.9 ID, silicon limited at Tc=25degC (A) 69 ID, package limited (A) 50 Logic level Yes open-in-new Find other N-channel MOSFET transistors

Features

  • Ultra-Low Qg and Qgd
  • Low Thermal Resistance
  • Avalanche Rated
  • Logic Level
  • Pb Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • SON 5 mm × 6 mm Plastic Package
open-in-new Find other N-channel MOSFET transistors

Description

This 7.8 mΩ, 60 V, SON 5 × 6 mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

open-in-new Find other N-channel MOSFET transistors
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Technical documentation

= Top documentation for this product selected by TI
No results found. Please clear your search and try again. View all 9
Type Title Date
* Datasheet CSD18534Q5A 60 V N-Channel NexFET™ Power MOSFET datasheet (Rev. D) Jun. 16, 2015
Technical articles Understanding the benefits of “lead-free” power MOSFETs Feb. 07, 2019
Application notes QFN and SON PCB Attachment (Rev. B) Aug. 24, 2018
Selection guides Power Management Guide 2018 (Rev. R) Jun. 25, 2018
Technical articles When to use load switches in place of discrete MOSFETs Feb. 03, 2016
Technical articles 48V systems: Driving power MOSFETs efficiently and robustly Oct. 08, 2015
User guides Using the UCC28730EVM-552 10-W Adaptor Module With PSR and Wake-Up Monitor Feb. 06, 2015
Technical articles Making Ideas Real. 3D Printer Technology From TI! Jan. 16, 2015
Application notes Ringing Reduction Techniques for NexFET High Performance MOSFETs Nov. 16, 2011

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Hardware development

EVALUATION BOARDS Download
document-generic User guide
149
Description

The BQ77915EVM-014 evaluation module (EVM) is a complete evaluation system for the bq77915 3-series to 5-series low-power protector for lithium-ion cells. The EVM includes one bq77915 and FETs to control current in a configuration typical for switching current in a lithium-ion battery pack. The (...)

Features
  • 3-series to 5-series lithium-ion protector with full suite of V/I/T protection functions
  • Low power consumption (8 µA typ in normal mode, 2 µA typ in hibernate mode)
  • Autonomous smart cell balancing
  • FETs to demonstrate current control
  • Tested circuit design includes demo and Getting Started guide

Software development

SUPPORT SOFTWARE Download
SLPC019.ZIP (338 KB)
SUPPORT SOFTWARE Download
SPLC001A.ZIP (311 KB)

Design tools & simulation

SIMULATION MODELS Download
SLPM058B.ZIP (5 KB) - PSpice Model
SIMULATION MODELS Download
SLPM223.ZIP (12 KB) - TINA-TI Spice Model
CALCULATION TOOLS Download
Buck Converter NexFET™ Selection Tool
FETPWRCALC — This tool is designed to assist engineers in the selection of Texas Instruments’ discrete power MOSFET and Power Block devices for their synchronous buck design. Users can input the conditions for their power supply and compare various discrete and power block solutions by power loss, relative (...)
Features
  • Vary power supply conditions and observe TI’s most efficient solutions for any set of input parameters
  • Select from a pre-established list of TI controllers or enter your own custom IC
  • Rank solutions by effective power loss and compare by relative 1k price, device package, and total PCB footprint
  • (...)
CALCULATION TOOLS Download
Power loss calculation tool for non-synchronous boost converter
NONSYNC-BOOST-FET-LOSS-CALC — MOSFET power loss calculator for non-synchronous boost converter
Features
  • Calculates power loss for TI MOSFETs
CALCULATION TOOLS Download
SLPC015.ZIP (66 KB)
CALCULATION TOOLS Download
SPLR001.ZIP (824 KB)

Reference designs

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