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CSD16570Q5B

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25-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 0.82 mOhm

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Data sheet

CSD16570Q5B

ACTIVE
Data sheet Order now

Product details

VDS (V) 25 Configuration Single Rds(on) at VGS=4.5 V (max) (mΩ) 0.82 Rds(on) at VGS=10 V (max) (mΩ) 0.59 IDM - pulsed drain current (max) (A) 400 QG (typ) (nC) 95 QGD (typ) (nC) 31 QGS (typ) (nC) 29 VGS (V) 20 VGSTH (typ) (V) 1.5 ID - silicon limited at TC=25°C (A) 456 ID - package limited (A) 100 Logic level Yes Operating temperature range (°C) -55 to 150 Rating Catalog
VDS (V) 25 Configuration Single Rds(on) at VGS=4.5 V (max) (mΩ) 0.82 Rds(on) at VGS=10 V (max) (mΩ) 0.59 IDM - pulsed drain current (max) (A) 400 QG (typ) (nC) 95 QGD (typ) (nC) 31 QGS (typ) (nC) 29 VGS (V) 20 VGSTH (typ) (V) 1.5 ID - silicon limited at TC=25°C (A) 456 ID - package limited (A) 100 Logic level Yes Operating temperature range (°C) -55 to 150 Rating Catalog
VSON-CLIP (DNK) 8 3E+1 mm² 6 x 5
  • Extremely Low Resistance
  • Low Qg and Qgd
  • Low Thermal Resistance
  • Avalanche Rated
  • Pb Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • SON 5-mm × 6-mm Plastic Package
  • Extremely Low Resistance
  • Low Qg and Qgd
  • Low Thermal Resistance
  • Avalanche Rated
  • Pb Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • SON 5-mm × 6-mm Plastic Package

This 25 V, 0.49 mΩ, SON 5 × 6 mm NexFET™ power MOSFET is designed to minimize resistance for ORing and hot swap applications and is not designed for switching applications.

This 25 V, 0.49 mΩ, SON 5 × 6 mm NexFET™ power MOSFET is designed to minimize resistance for ORing and hot swap applications and is not designed for switching applications.

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Technical documentation

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Type Title Date
* Data sheet CSD16570Q5B 25-V N-Channel NexFET Power MOSFET datasheet (Rev. A) PDF | HTML 19 May 2017
Application note Using MOSFET Safe Operating Area Curves in Your Design PDF | HTML 13 Mar 2023
Application note MOSFET Support and Training Tools (Rev. A) PDF | HTML 04 Nov 2022
Application note Tips for Successfully Paralleling Power MOSFETs PDF | HTML 31 May 2022
Technical article Understanding the benefits of “lead-free” power MOSFETs 08 Feb 2019
Application note QFN and SON PCB Attachment (Rev. B) PDF | HTML 24 Aug 2018
Application note Semiconductor and IC Package Thermal Metrics (Rev. C) PDF | HTML 19 Apr 2016
Technical article When to use load switches in place of discrete MOSFETs 03 Feb 2016
Technical article 48V systems: Driving power MOSFETs efficiently and robustly 08 Oct 2015
Application note Ringing Reduction Techniques for NexFET High Performance MOSFETs 16 Nov 2011

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Support software

Power Loss Calculation Tool for Load Switch (Rev. A)

SLPC019A.ZIP (375 KB)
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Simulation model

CSD16570Q5B TINA-TI Spice Model

SLPM200.ZIP (4 KB) - TINA-TI Spice Model
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Simulation model

CSD16570Q5B Unencrypted PSpice Model (Rev. B)

SLPM132B.ZIP (3 KB) - PSpice Model
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Calculation tool

NONSYNC-BOOST-FET-LOSS-CALC — Power loss calculation tool for non-synchronous boost converter

MOSFET power loss calculator for non-synchronous boost converter
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Calculation tool

SYNC-BUCK-FET-LOSS-CALC — MOSFET power loss calculator for synchronous buck converter applications

Quickly trade off size, cost and performance to select the optimal MOSFET based on application conditions.
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Reference designs

PMP23126 — 3-kW phase-shifted full bridge with active clamp reference design with > 270-W/in3 power density

This reference design is a GaN-based 3-kW phase-shifted full bridge (PSFB) targeting maximum power density. The design has an active clamp to minimize voltage stress on the secondary synchronous rectifier MOSFETs enabling use of lower voltage-rating MOSFETs with better figure-of-merit (FoM). (...)
Test report: PDF
Reference designs

PMP40182 — Bi-Directional Battery Initialization System Power Board Reference Design

This reference design is a battery initialization reference design solution for automotive and battery applications. The module enables a high efficiency single stage conversion for charging and discharging the battery. This design features a 0.1% accurate current control loop using the high (...)
Test report: PDF
Schematic: PDF
Package Pins Download
VSON-CLIP (DNK) 8 View options

Ordering & quality

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Recommended products may have parameters, evaluation modules or reference designs related to this TI product.

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