This 30 V, 0.56 mΩ, SON 5 × 6 mm NexFET™ power MOSFET is designed to minimize resistance for ORing and hot swap applications and is not intended for switching applications.
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| Part number | Order | VDS (V) | Configuration | Rds(on) max at VGS=4.5 V (mOhms) | Rds(on) max at VGS=10 V (mOhms) | IDM, max pulsed drain current (Max) (A) | QG typ (nC) | QGD typ (nC) | Package (mm) | VGS (V) | VGSTH typ (V) | ID, silicon limited at Tc=25degC (A) | ID, package limited (A) | Logic level |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| CSD17570Q5B |
|
30 | Single | 0.92 | 0.69 | 400 | 93 | 34 | SON5x6 | 20 | 1.5 | 407 | 100 | Yes |
