Product details


VDS (V) 30 Configuration Dual Rds(on) max at VGS=4.5 V (mOhms) 42 Rds(on) max at VGS=10 V (mOhms) 32.4 IDM, max pulsed drain current (Max) (A) 23 QG typ (nC) 2.2 QGD typ (nC) 0.5 Package (mm) SON2x2 VGS (V) 20 VGSTH typ (V) 1.6 ID, package limited (A) 5 Logic level Yes open-in-new Find other N-channel MOSFET transistors


  • Low On-Resistance
  • Dual Independent MOSFETs
  • Space Saving SON 2 × 2 mm Plastic Package
  • Optimized for 5 V Gate Driver
  • Avalanche Rated
  • Pb and Halogen Free
  • RoHS Compliant
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The CSD87502Q2 is a 30 V, 27 mΩ N-Channel device with dual independent MOSFETs in a SON 2 x 2 mm plastic package. The two FETs were designed to be used in a half-bridge configuration for synchronous buck and other power supply applications. Additionally, these NexFET power MOSFETs can be used for adaptor, USB input protection, and battery charging applications. The dual FETs feature low drain-to-source on-resistance that minimizes losses and offers low component count for space-constrained applications.

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Technical documentation

= Top documentation for this product selected by TI
No results found. Please clear your search and try again. View all 6
Type Title Date
* Datasheet CSD87502Q2 30 V Dual N-Channel NexFET™ Power MOSFETs datasheet Dec. 16, 2015
Technical articles Understanding the benefits of “lead-free” power MOSFETs Feb. 07, 2019
Application note QFN and SON PCB Attachment (Rev. B) Aug. 24, 2018
Technical articles When to use load switches in place of discrete MOSFETs Feb. 03, 2016
Technical articles 48V systems: Driving power MOSFETs efficiently and robustly Oct. 08, 2015
Application note Ringing Reduction Techniques for NexFET High Performance MOSFETs Nov. 16, 2011

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Design tools & simulation

SLPM164A.ZIP (4 KB) - PSpice Model
Buck Converter NexFET™ Selection Tool
FETPWRCALC — This tool is designed to assist engineers in the selection of Texas Instruments’ discrete power MOSFET and Power Block devices for their synchronous buck design. Users can input the conditions for their power supply and compare various discrete and power block solutions by power loss, relative (...)
  • Vary power supply conditions and observe TI’s most efficient solutions for any set of input parameters
  • Select from a pre-established list of TI controllers or enter your own custom IC
  • Rank solutions by effective power loss and compare by relative 1k price, device package, and total PCB footprint
  • (...)
Power loss calculation tool for non-synchronous boost converter
NONSYNC-BOOST-FET-LOSS-CALC — MOSFET power loss calculator for non-synchronous boost converter
  • Calculates power loss for TI MOSFETs
SPLR001.ZIP (824 KB)

Reference designs

10.8-V/30-W, >95% Efficiency, 4.3-cm2, Power Stage Reference Design for Brushless DC Servo Drive
TIDA-01587 — This 15-W, 16-mm × 27-mm, power stage reference design drives and controls the position of the brushless DC (BLDC) motor operating from a three- to four-cell Li-ion battery. This highly-efficient solution is optimized with a very small form factor that easily fits into the motor and supports (...)
document-generic Schematic
Controller Area Network (CAN) With Selectable Termination Reference Design
TIDA-01238 — Typically in bus communication technologies, such as controller area network (CAN) and RS-485, the two farthest nodes in the network are terminated with 120Ω termination resistors and the other nodes are left unterminated. This process requires that the hardware designer know the layout of the end (...)
document-generic Schematic

CAD/CAE symbols

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