Product details

VDS (V) 30 Configuration Dual Rds(on) max at VGS=4.5 V (mOhms) 42 Rds(on) max at VGS=10 V (mOhms) 32.4 IDM - pulsed drain current (Max) (A) 23 QG typ (nC) 2.2 QGD typ (nC) 0.5 Package (mm) SON2x2 VGS (V) 20 VGSTH typ (V) 1.6 ID - silicon limited at Tc=25degC (A) 5 ID - package limited (A) 5 Logic level Yes
VDS (V) 30 Configuration Dual Rds(on) max at VGS=4.5 V (mOhms) 42 Rds(on) max at VGS=10 V (mOhms) 32.4 IDM - pulsed drain current (Max) (A) 23 QG typ (nC) 2.2 QGD typ (nC) 0.5 Package (mm) SON2x2 VGS (V) 20 VGSTH typ (V) 1.6 ID - silicon limited at Tc=25degC (A) 5 ID - package limited (A) 5 Logic level Yes
  • Low On-Resistance
  • Dual Independent MOSFETs
  • Space Saving SON 2 × 2 mm Plastic Package
  • Optimized for 5 V Gate Driver
  • Avalanche Rated
  • Pb and Halogen Free
  • RoHS Compliant
  • Low On-Resistance
  • Dual Independent MOSFETs
  • Space Saving SON 2 × 2 mm Plastic Package
  • Optimized for 5 V Gate Driver
  • Avalanche Rated
  • Pb and Halogen Free
  • RoHS Compliant

The CSD87502Q2 is a 30 V, 27 mΩ N-Channel device with dual independent MOSFETs in a SON 2 x 2 mm plastic package. The two FETs were designed to be used in a half-bridge configuration for synchronous buck and other power supply applications. Additionally, these NexFET power MOSFETs can be used for adaptor, USB input protection, and battery charging applications. The dual FETs feature low drain-to-source on-resistance that minimizes losses and offers low component count for space-constrained applications.

The CSD87502Q2 is a 30 V, 27 mΩ N-Channel device with dual independent MOSFETs in a SON 2 x 2 mm plastic package. The two FETs were designed to be used in a half-bridge configuration for synchronous buck and other power supply applications. Additionally, these NexFET power MOSFETs can be used for adaptor, USB input protection, and battery charging applications. The dual FETs feature low drain-to-source on-resistance that minimizes losses and offers low component count for space-constrained applications.

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Technical documentation

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Type Title Date
* Data sheet CSD87502Q2 30 V Dual N-Channel NexFET™ Power MOSFETs datasheet 16 Dec 2015
Technical article Understanding the benefits of “lead-free” power MOSFETs 08 Feb 2019
Application note QFN and SON PCB Attachment (Rev. B) 24 Aug 2018
Technical article When to use load switches in place of discrete MOSFETs 03 Feb 2016
Technical article 48V systems: Driving power MOSFETs efficiently and robustly 08 Oct 2015
Application note Ringing Reduction Techniques for NexFET High Performance MOSFETs 16 Nov 2011

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Simulation model

CSD87502Q2 Unencrypted PSpice Model Package (Rev. B)

SLPM164B.ZIP (5 KB) - PSpice Model
Calculation tool

MOTOR-DRIVE-FET-LOSS-CALC — MOSFET power loss calculator for motor drive applications

This is an Excel-based MOSFET power loss calculator for brushless DC motor drive applications.
Calculation tool

NONSYNC-BOOST-FET-LOSS-CALC — Power loss calculation tool for non-synchronous boost converter

MOSFET power loss calculator for non-synchronous boost converter
Calculation tool

SYNC-BOOST-FET-LOSS-CALC — Power loss calculation tool for synchronous boost converter

MOSFET power loss calculator for synchronous boost converter applications.
Calculation tool

SYNC-BUCK-FET-LOSS-CALC — MOSFET power loss calculator for synchronous buck converter applications

MOSFET power loss calculator for synchronous buck converter applications
参考设计

TIDA-01587 — 10.8-V/30-W, >95% Efficiency, 4.3-cm2, Power Stage Reference Design for Brushless DC Servo Drive

This 15-W, 16-mm × 27-mm, power stage reference design drives and controls the position of the brushless DC (BLDC) motor operating from a three- to four-cell Li-ion battery. This highly-efficient solution is optimized with a very small form factor that easily fits into the motor and supports (...)
参考设计

TIDA-01238 — Controller Area Network (CAN) With Selectable Termination Reference Design

Typically in bus communication technologies, such as controller area network (CAN) and RS-485, the two farthest nodes in the network are terminated with 120Ω termination resistors and the other nodes are left unterminated. This process requires that the hardware designer know the layout of the end (...)
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