CSD13380F3
12-V, N channel NexFET™ power MOSFET, single LGA 0.6 mm x 0.7 mm, 76 mOhm, gate ESD protection
CSD13380F3
- Low on resistance
- Ultra-low Qg and Qgd
- High operating drain current
- Ultra-small footprint
- 0.73 mm × 0.64 mm
- Low profile
- 0.36-mm max height
- Integrated ESD protection diode
- Rated > 3-kV HBM
- Rated > 2-kV CDM
- Lead and halogen free
- RoHS compliant
This 63-mΩ, 12-V N-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size.
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Technical documentation
Design & development
For additional terms or required resources, click any title below to view the detail page where available.
CSD1FNCHEVM-889 — FemtoFET N-ch Evaluation Module
NONSYNC-BOOST-FET-LOSS-CALC — NONSYNC BOOST FET LOSS Calculator
Supported products & hardware
Products
N-channel MOSFETs
SYNC-BUCK-FET-LOSS-CALC — Power Loss Calculation Tool for Synchronous Buck Converter
Supported products & hardware
Products
Power blocks
N-channel MOSFETs
Package | Pins | Download |
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PICOSTAR (YJM) | 3 | View options |
Ordering & quality
- RoHS
- REACH
- Device marking
- Lead finish/Ball material
- MSL rating/Peak reflow
- MTBF/FIT estimates
- Material content
- Qualification summary
- Ongoing reliability monitoring
Recommended products may have parameters, evaluation modules or reference designs related to this TI product.
Support & training
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