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Product details

Parameters

VDS (V) 12 Configuration Single Rds(on) max at VGS=4.5 V (mOhms) 76 IDM - pulsed drain current (Max) (A) 13.5 QG typ (nC) 0.91 QGD typ (nC) 0.15 Package (mm) LGA 0.7x0.6mm VGS (V) 8 VGSTH typ (V) 0.85 ID - silicon limited at Tc=25degC (A) 3.6 ID - package limited (A) 3.6 Logic level Yes open-in-new Find other N-channel MOSFET transistors

Features

  • Low On Resistance
  • Ultra-Low Qg and Qgd
  • High Operating Drain Current
  • Ultra-Small Footprint
    • 0.73 mm × 0.64 mm
  • Low Profile
    • 0.35-mm Max Height
  • Integrated ESD Protection Diode
    • Rated > 3-kV HBM
    • Rated > 2-kV CDM
  • Lead and Halogen Free
  • RoHS Compliant
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Description

This 63-mΩ, 12-V N-Channel FemtoFET MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size.

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Technical documentation

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Type Title Date
* Data sheet CSD13380F3 12-V N-Channel FemtoFET MOSFET datasheet Oct. 24, 2016
Technical article Understanding the benefits of “lead-free” power MOSFETs Feb. 08, 2019
Application note Auxiliary circuits for high-performance audio Jan. 16, 2019
User guide Ultra-Small Footprint N-Channel FemtoFET™ MOSFET Test EVM Dec. 06, 2017
User guide FemtoFET Surface Mount Guide (Rev. D) Jul. 07, 2016
Technical article When to use load switches in place of discrete MOSFETs Feb. 03, 2016
Technical article 48V systems: Driving power MOSFETs efficiently and robustly Oct. 08, 2015

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Hardware development

EVALUATION BOARD Download
document-generic User guide
79
Description
This FemtoFET N-ch EVM includes seven daughter cards, each card containing a different FemtoFET N-ch part number.  The daughter cards allow the engineer to easily connect and test these tiny devices.  The seven FemtoFETs range from 12V to 40V Vds, and the size of the devices include F3 (...)
Features
  • Easy handling of these Land Grid Array (LGA) packaged parts
  • Full range of Vds and package size
  • Seven daughter cards can be snapped to create individual boards, with one FET per daughter card
  • FemtoFETs have the best Size*Resistance in the FET industry

Software development

SUPPORT SOFTWARE Download
SLPC019.ZIP (338 KB)

Design tools & simulation

SIMULATION MODEL Download
SLPM241A.ZIP (3 KB) - PSpice Model
SIMULATION MODEL Download
SLPM257.TSC (65 KB) - TINA-TI Reference Design
SIMULATION MODEL Download
SLPM258.ZIP (9 KB) - TINA-TI Spice Model
CALCULATION TOOL Download
Power loss calculation tool for non-synchronous boost converter
NONSYNC-BOOST-FET-LOSS-CALC — MOSFET power loss calculator for non-synchronous boost converter
Features
  • Calculates power loss for TI MOSFETs
CALCULATION TOOL Download
MOSFET power loss calculator for synchronous buck converter applications
SYNC-BUCK-FET-LOSS-CALC — MOSFET power loss calculator for synchronous buck converter applications
Features
  • Calculates power loss for TI MOSFETs

CAD/CAE symbols

Package Pins Download
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Ordering & quality

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  • REACH
  • Device marking
  • Lead finish/Ball material
  • MSL rating/Peak reflow
  • MTBF/FIT estimates
  • Material content
  • Qualification summary
  • Ongoing reliability monitoring

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