Product details

VDS (V) 100 Configuration Single Rds(on) max at VGS=10 V (mOhms) 6.4 IDM - pulsed drain current (Max) (A) 337 QG typ (nC) 37 QGD typ (nC) 6.6 Package (mm) SON5x6 VGS (V) 20 VGSTH typ (V) 2.7 ID - silicon limited at Tc=25degC (A) 110 ID - package limited (A) 100 Logic level No
VDS (V) 100 Configuration Single Rds(on) max at VGS=10 V (mOhms) 6.4 IDM - pulsed drain current (Max) (A) 337 QG typ (nC) 37 QGD typ (nC) 6.6 Package (mm) SON5x6 VGS (V) 20 VGSTH typ (V) 2.7 ID - silicon limited at Tc=25degC (A) 110 ID - package limited (A) 100 Logic level No
  • Ultra-Low Qg and Qgd
  • Low Thermal Resistance
  • Avalanche Rated
  • Pb-Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • SON 5 mm × 6 mm Plastic Package
  • Ultra-Low Qg and Qgd
  • Low Thermal Resistance
  • Avalanche Rated
  • Pb-Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • SON 5 mm × 6 mm Plastic Package

This 100 V, 5.3 mΩ, SON 5 mm × 6 mm NexFET power MOSFET is designed to minimize losses in power conversion applications.

Typical RθJA = 40°C/W on a 1−inch2, 2-oz. Cu pad on a 0.06−inch thick FR4 PCB. Max RθJC = 1.0°C/W, pulse duration ≤100 μs, duty cycle ≤1%

For all available packages, see the orderable addendum at the end of the data sheet.

This 100 V, 5.3 mΩ, SON 5 mm × 6 mm NexFET power MOSFET is designed to minimize losses in power conversion applications.

Typical RθJA = 40°C/W on a 1−inch2, 2-oz. Cu pad on a 0.06−inch thick FR4 PCB. Max RθJC = 1.0°C/W, pulse duration ≤100 μs, duty cycle ≤1%

For all available packages, see the orderable addendum at the end of the data sheet.

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Technical documentation

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Type Title Date
* Data sheet CSD19531Q5A 100 V N-Channel NexFET Power MOSFETs datasheet (Rev. B) 19 May 2014
Technical article Understanding the benefits of “lead-free” power MOSFETs 08 Feb 2019
Application note QFN and SON PCB Attachment (Rev. B) 24 Aug 2018
Technical article How to select a MOSFET - Hot Swap 06 Apr 2018
Technical article When to use load switches in place of discrete MOSFETs 03 Feb 2016
Technical article 48V systems: Driving power MOSFETs efficiently and robustly 08 Oct 2015
Application note Ringing Reduction Techniques for NexFET High Performance MOSFETs 16 Nov 2011

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Daughter card

UCC24636EVM — UCC24636 Synchronous Rectifier Daughter Board/Evaluation Module

The UCC24636EVM is a demonstration daughter board that allows quick installation into an existing DCM Flyback power supply to convert an output diode rectifier into a synchronous rectifier to improve efficiency. The board is programmed by the user and may be wired directly into the output stage, (...)
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Support software

Power Loss Calculation Tool for Load Switch

SLPC019.ZIP (338 KB)
Simulation model

CSD19531Q5A Unencrypted PSpice Model (Rev. C)

SLPM077C.ZIP (5 KB) - PSpice Model
Simulation model

CSD19531Q5A TINA-TI Spice Model (Rev. A)

SLPM111A.TSM (16 KB) - TINA-TI Spice Model
Calculation tool

MOTOR-DRIVE-FET-LOSS-CALC — MOSFET power loss calculator for motor drive applications

This is an Excel-based MOSFET power loss calculator for brushless DC motor drive applications.
Calculation tool

NONSYNC-BOOST-FET-LOSS-CALC — Power loss calculation tool for non-synchronous boost converter

MOSFET power loss calculator for non-synchronous boost converter
Calculation tool

SYNC-BOOST-FET-LOSS-CALC — Power loss calculation tool for synchronous boost converter

MOSFET power loss calculator for synchronous boost converter applications.
Calculation tool

SYNC-BUCK-FET-LOSS-CALC — MOSFET power loss calculator for synchronous buck converter applications

MOSFET power loss calculator for synchronous buck converter applications
Calculation tool

SYNC-RECT-FET-LOSS-CALC — Power loss calculation tool for synchronous rectifier

MOSFET power loss calculator for synchronous rectifier applications
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