30V, N ch NexFET MOSFET™, single SON5x6, 12.1mOhm
Product details
Parameters
Features
- Optimized for 5V Gate Drive
- Ultralow Qg and Qgd
- Low Thermal Resistance
- Avalanche Rated
- Pb Free Terminal Plating
- RoHS Compliant
- Halogen Free
- SON 5-mm × 6-mm Plastic Package
- APPLICATIONS
- Notebook Point of Load
- Point-of-Load Synchronous Buck in Networking, Telecom and Computing Systems
Description
The NexFET power MOSFET has been designed to minimize losses in power conversion applications, and optimized for 5V gate drive applications.
Technical documentation
Type | Title | Date | |
---|---|---|---|
* | Datasheet | 30-V N-Channel NexFET Power MOSFET datasheet (Rev. A) | Jul. 20, 2010 |
Technical articles | Understanding the benefits of “lead-free” power MOSFETs | Feb. 07, 2019 | |
Application note | QFN and SON PCB Attachment (Rev. B) | Aug. 24, 2018 | |
Selection guide | Power Management Guide 2018 (Rev. R) | Jun. 25, 2018 | |
Technical articles | When to use load switches in place of discrete MOSFETs | Feb. 03, 2016 | |
Technical articles | 48V systems: Driving power MOSFETs efficiently and robustly | Oct. 08, 2015 | |
Application note | Ringing Reduction Techniques for NexFET High Performance MOSFETs | Nov. 16, 2011 |
Design & development
For additional terms or required resources, click any title below to view the detail page where available.Hardware development
Description
Features
- 8V to 20V Input Range
- 3.3V Fixed Output
- 20 ADC Steady State Output Current
- 300kHz Switching Frequency
- Two-Layer PCB with all Components on Top Side
- Convenient Test Points for Probing Switching Waveforms and Non-Invasive Loop Response Testing
Description
The TPS51116EVM evaluation module (EVM) is a dual-output converter for DDR and DDRII memory modules. It uses a 10 A synchronous buck converter to provide the core voltage (VDDQ) for DDR memory modules. The EVM is designed to use a 4.5 V to 28 V supply voltage and a 4.75 V to (...)
Features
- Up to 85% efficiency on the VDDQ switching regulator output
- Dual switching regulator / LDO output for both DDR core and termination voltages
- ± 3 A sink/source termination voltage LDO regulator
- 10 mA termination reference voltage for DDR input reference
- User selectable DDR and DDRII or externally referenced (...)
Description
Description
The TPS51220 is a dual peak-current mode, synchronous step-down controller with three low-dropout (LDO) regulators. It is optimized for 5 V/3.3 V notebook system power supplies. A 99% duty cycle operation enables designers to complete Li-ion battery applications from 2-cells to 4-cells (...)
Software development
Design tools & simulation
Features
- Vary power supply conditions and observe TI’s most efficient solutions for any set of input parameters
- Select from a pre-established list of TI controllers or enter your own custom IC
- Rank solutions by effective power loss and compare by relative 1k price, device package, and total PCB footprint
- (...)
Features
- Calculates power loss for TI MOSFETs
Reference designs
Design files
-
download PMP30159 BOM.pdf (80KB) -
download PMP30159 PCB.pdf (52KB) -
download PMP30159 CAD Files.zip (105KB) -
download PMP30159 Gerber.zip (65KB)
CAD/CAE symbols
Package | Pins | Download |
---|---|---|
(DQJ) | 8 | View options |
Ordering & quality
- RoHS
- REACH
- Device marking
- Lead finish/Ball material
- MSL rating/Peak reflow
- MTBF/FIT estimates
- Material content
- Qualification summary
- Ongoing reliability monitoring
Recommended products may have parameters, evaluation modules or reference designs related to this TI product.
Support & training
TI E2E™ forums with technical support from TI engineers
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