SWCU195A December 2024 – May 2025 CC2744R7-Q1 , CC2745P10-Q1 , CC2745R10-Q1 , CC2745R7-Q1 , CC2755R10
The Flash is organized in banks of 512kB each, up to the maximum Flash size of the device (consult the device datasheet for the Flash size of each variant). The banks are further divided into sectors of 2KB that can be individually erased. An erase operation on a sector causes the entire content of the sector to be reset to all 1s. A programming operation can change bits from 1 to 0 with byte granularity.
There is a restriction on how many write operations are allowed to a FLASH row between erases. A row is comprised of 2048 bits (or 256 bytes). The FLASH memory is divided evenly into physical rows. One may perform a maximum of 83 write operations within a row between erases. If more than 83 write operations are performed before re-erasure, one may see unwritten bits in the row that are erased (in a logic 1 state) become programmed (change to a logic 0 state). User software must take care of this restriction, there is no hardware that checks and informs if this restriction is violated.
VIMS allows programming or erasing data on one bank without blocking read access to the other bank. A read access to the same bank that is getting programmed or erased would result in blocking of the access or invalid data is returned.
The flash is shared between the CPU and HSM, so the actual available space for the user application depends on the CFG.HSMSZ configuration is done at the boot.