This –8 V, 8.2 mΩ, 1.5 mm × 1.5 mm device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile. Low on-resistance coupled with the small footprint and low profile make the device ideal for battery operated space constrained applications.
| Top documentation | Type | Title | Format options | Date |
|---|---|---|---|---|
| * | Data sheet | CSD22204W –8 V P-Channel NexFET Power MOSFET datasheet | PDF | HTML | Mar 9, 2015 |
| Application brief | Estimating Leakage Currents of Power MOSFETs | PDF | HTML | Oct 31, 2025 | |
| Application note | MOSFET Support and Training Tools (Rev. G) | PDF | HTML | Oct 27, 2025 | |
| Application note | Semiconductor and IC Package Thermal Metrics (Rev. D) | PDF | HTML | Mar 25, 2024 | |
| Application note | Using MOSFET Transient Thermal Impedance Curves In Your Design | PDF | HTML | Dec 18, 2023 | |
| Application note | Solving Assembly Issues with Chip Scale Power MOSFETs | PDF | HTML | Dec 14, 2023 | |
| Application note | Using MOSFET Safe Operating Area Curves in Your Design | PDF | HTML | Mar 13, 2023 | |
| Application brief | Tips for Successfully Paralleling Power MOSFETs | PDF | HTML | May 31, 2022 | |
| Application note | AN-1112 DSBGA Wafer Level Chip Scale Package (Rev. AI) | Jun 14, 2019 |
For additional terms or required resources, click any title below to view the detail page where available.
| Package | Pins | CAD symbols, footprints & 3D models |
|---|---|---|
| DSBGA (YZF) | 9 | Ultra Librarian |
Recommended products may have parameters, evaluation modules or reference designs related to this TI product.
Content is provided "as is" by TI and community contributors and does not constitute TI specifications. See terms of use.
If you have questions about quality, packaging or ordering TI products, see TI support.