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Product details

Parameters

VDS (V) -8 VGS (V) -6 Configuration Single Rds(on) max at VGS=4.5 V (mOhms) 9.9 Rds(on) max at VGS=2.5 V (mOhms) 14 Id peak (Max) (A) -80 Id max cont (A) -5 QG typ (nC) 18.9 QGD typ (nC) 4.2 QGS typ (nC) 3.2 VGSTH typ (V) -0.7 Package (mm) WLP 1.5x1.5 open-in-new Find other P-channel MOSFETs

Package | Pins | Size

DSBGA (YZF) 9 3 mm² 1.5 x 1.5 open-in-new Find other P-channel MOSFETs

Features

  • Low Resistance
  • Small Footprint 1.5 mm × 1.5 mm
  • Pb Free
  • Gate ESD Protection
  • RoHS Compliant
  • Halogen Free
  • Gate-Source Voltage Clamp
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Description

This –8 V, 8.2 mΩ, 1.5 mm × 1.5 mm device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile. Low on-resistance coupled with the small footprint and low profile make the device ideal for battery operated space constrained applications.

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Technical documentation

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Type Title Date
* Data sheet CSD22204W –8 V P-Channel NexFET Power MOSFET datasheet Mar. 09, 2015
Technical article Understanding the benefits of “lead-free” power MOSFETs Feb. 08, 2019
Technical article When to use load switches in place of discrete MOSFETs Feb. 03, 2016
Technical article 48V systems: Driving power MOSFETs efficiently and robustly Oct. 08, 2015

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Software development

SUPPORT SOFTWARE Download
SLPC019.ZIP (338 KB)

Design tools & simulation

SIMULATION MODEL Download
SLPM148B.ZIP (3 KB) - PSpice Model

CAD/CAE symbols

Package Pins Download
DSBGA (YZF) 9 View options

Ordering & quality

Information included:
  • RoHS
  • REACH
  • Device marking
  • Lead finish/Ball material
  • MSL rating/Peak reflow
  • MTBF/FIT estimates
  • Material content
  • Qualification summary
  • Ongoing reliability monitoring

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