CSD22205L -8V P-Channel NexFET™ Power MOSFET | TI.com

CSD22205L (ACTIVE)

-8V P-Channel NexFET™ Power MOSFET

-8V P-Channel NexFET™ Power MOSFET - CSD22205L
 

Description

This –8-V, 8.2-mΩ, 1.2-mm × 1.2-mm Land Grid Array (LGA) NexFET™ device has been designed to deliver the lowest on-resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. The Land Grid Array (LGA) package is a silicon chip scale package with metal pads instead of solder balls.

Features

  • Low Resistance
  • Small Footprint 1.2 mm × 1.2 mm
  • Low Profile 0.35-mm Height
  • Lead Free
  • Gate-Source Voltage Clamp
  • Gate ESD Protection
  • RoHS Compliant
  • Halogen Free

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Parametrics Compare all products in P-channel MOSFET transistors

 
VDS (V)
VGS (V)
Configuration
Rds(on) Max at VGS=4.5V (mOhms)
Rds(on) Max at VGS=2.5V (mOhms)
Rds(on) Max at VGS=1.8V (mOhms)
Id Peak (Max) (A)
Id Max Cont (A)
QG Typ (nC)
QGD Typ (nC)
QGS Typ (nC)
VGSTH Typ (V)
Package (mm)
Rating
CSD22205L CSD22202W15 CSD22204W CSD22206W
-8     -8     -8     -8    
-6     -6     -6     -6    
Single     Single     Single     Single    
9.9     12.2     9.9     5.7    
15     17.4     14     9.1    
40          
-71     -48     -80     -108    
-7.4     -5     -5     -5    
6.5     6.5     18.9     11.2    
1     1     4.2     1.8    
1.2     1.6     3.2     2.1    
-0.7     -0.8     -0.7     -0.7    
LGA 1.2x1.2     WLP 1.5x1.5     WLP 1.5x1.5     WLP 1.5x1.5    
Catalog     Catalog     Catalog     Catalog    

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