CSD22205L -8V P-Channel NexFET™ Power MOSFET | TI.com

CSD22205L (ACTIVE) -8V P-Channel NexFET™ Power MOSFET

 

Description

This –8-V, 8.2-mΩ, 1.2-mm × 1.2-mm Land Grid Array (LGA) NexFET™ device has been designed to deliver the lowest on-resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. The Land Grid Array (LGA) package is a silicon chip scale package with metal pads instead of solder balls.

Features

  • Low Resistance
  • Small Footprint 1.2 mm × 1.2 mm
  • Low Profile 0.35-mm Height
  • Lead Free
  • Gate-Source Voltage Clamp
  • Gate ESD Protection
  • RoHS Compliant
  • Halogen Free

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Parametrics

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Part number Order VDS (V) VGS (V) Configuration Rds(on) max at VGS=4.5 V (mOhms) Rds(on) max at VGS=2.5 V (mOhms) Rds(on) max at VGS=1.8 V (mOhms) Id peak (Max) (A) Id max cont (A) QG typ (nC) QGD typ (nC) QGS typ (nC) VGSTH typ (V) Package (mm) Rating
CSD22205L Order now -8     -6     Single     9.9     15     40     -71     -7.4     6.5     1     1.2     -0.7     LGA 1.2x1.2     Catalog    
CSD22202W15 Order now -8     -6     Single     12.2     17.4       -48     -5     6.5     1     1.6     -0.8     WLP 1.5x1.5     Catalog    
CSD22204W Order now -8     -6     Single     9.9     14       -80     -5     18.9     4.2     3.2     -0.7     WLP 1.5x1.5     Catalog    
CSD22206W Order now -8     -6     Single     5.7     9.1       -108     -5     11.2     1.8     2.1     -0.7     WLP 1.5x1.5     Catalog