CSD16325Q5 N-Channel NexFET™ Power MOSFET | TI.com

CSD16325Q5 (ACTIVE) N-Channel NexFET™ Power MOSFET

N-Channel NexFET™ Power MOSFET - CSD16325Q5
Datasheet
 

Description

The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications and optimized for 5V gate drive applications.

Features

  • Optimized for 5V Gate Drive
  • Ultralow Qg and Qgd
  • Low Thermal Resistance
  • Avalanche Rated
  • Pb Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • SON 5-mm × 6-mm Plastic Package
  • APPLICATIONS
    • Point-of-Load Synchronous Buck in Networking,
      Telecom and Computing Systems
    • Optimized for Synchronous FET Applications

NexFET is a trademark of Texas Instruments.

Parametrics

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Part number Order VDS (V) Configuration Rds(on) max at VGS=4.5 V (mOhms) IDM, max pulsed drain current (Max) (A) QG typ (nC) QGD typ (nC) Package (mm) VGS (V) VGSTH typ (V) ID, silicon limited at Tc=25degC (A) ID, package limited (A) Logic level Rating
CSD16325Q5 Order now 25     Single     2.2     200     18     3.5     SON5x6     10     1.1       100     Yes     Catalog    
CSD16321Q5 Order now 25     Single     2.6     200     14     2.5     SON5x6     10     1.1       100     Yes     Catalog    
CSD16322Q5 Order now 25     Single     5.8     136     6.8     1.3     SON5x6     10     1.1     97     100     Yes     Catalog