100V, 5.3mOhm, SON5x6 NexFET™ Power MOSFET - CSD19531Q5A

CSD19531Q5A (ACTIVE)

100V, 5.3mOhm, SON5x6 NexFET™ Power MOSFET

Description

This 100 V, 5.3 mΩ, SON 5 mm × 6 mm NexFET power MOSFET is designed to minimize losses in power conversion applications.

Typical RθJA = 40°C/W on a 1−inch2, 2-oz. Cu pad on a 0.06−inch thick FR4 PCB. Max RθJC = 1.0°C/W, pulse duration ≤100 μs, duty cycle ≤1%

For all available packages, see the orderable addendum at the end of the data sheet.

Features

  • Ultra-Low Qg and Qgd
  • Low Thermal Resistance
  • Avalanche Rated
  • Pb-Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • SON 5 mm × 6 mm Plastic Package

View more

Parametrics Compare all products in N-Channel MOSFET Transistor

 
VDS (V)
Logic Level
Rds(on) Max @ VGS=10V (mOhms)
ID / IPEAK (Max) (A)
Id Max@TC=25°C (A)
QG Typ (nC)
Configuration
Package
Rating
Approx. Price (US$)
QGD Typ (nC)
VGS (V)
VGSTH Typ (V)
CSD19531Q5A CSD19531KCS CSD19532Q5B CSD19533KCS CSD19533Q5A CSD19535KCS CSD19536KCS
100     100     100     100     100     100     100    
No     No     No     No     No     No     No    
6.4     7.7     4.9     10.5     9.5     3.6     2.7    
100     122     200     104     100     181     224    
110     105     124     86     75     187     259    
37     38     48     27     27     78     118    
Single     Single     Single     Single     Single     Single     Single    
SON5x6     TO-220     SON5x6     TO-220     SON5x6     TO-220     TO-220    
Catalog     Catalog     Catalog     Catalog     Catalog     Catalog     Catalog    
0.90 | 1ku     0.98 | 1ku     1.19 | 1ku     0.82 | 1ku     0.74 | 1ku     1.65 | 1ku     2.30 | 1ku    
6.6     7.5     8.7     5.4     4.9     13     17    
20     20     20     20     20     20     20    
2.7     2.7     2.6     2.8     2.8     2.7     2.5    

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