CSD17579Q5A CSD17579Q5A 30-V N-Channel NexFET™ Power MOSFET | TI.com

CSD17579Q5A (ACTIVE) CSD17579Q5A 30-V N-Channel NexFET™ Power MOSFET

CSD17579Q5A 30-V N-Channel NexFET™ Power MOSFET  - CSD17579Q5A
Datasheet
 

Description

This 30 V, 8.4 mΩ, SON 5 mm × 6mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

Features

  • Low Qg and Qgd
  • Low RDS(on)
  • Low Thermal Resistance
  • Avalanche Rated
  • Pb-Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • SON 5 mm × 6 mm Plastic Package

Parametrics

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Part number Order VDS (V) Configuration Rds(on) max at VGS=4.5 V (mOhms) Rds(on) max at VGS=10 V (mOhms) IDM, max pulsed drain current (Max) (A) QG typ (nC) QGD typ (nC) Package (mm) VGS (V) VGSTH typ (V) ID, silicon limited at Tc=25degC (A) ID, package limited (A) Logic level Rating
CSD17579Q5A Order now 30     Single     13.3     9.7     105     5.4     1.2     SON5x6     20     1.5     46     25     Yes     Catalog